Inventor · disambiguated record
Hung-Chin Chung
Also filed as: CHUNG HUNG-CHIN
31 granted patents·8 pending applications·22 citations·filing 2013–2025
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD39
Top patents by PatentIndex Score
39 records- 0194US12255104B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·1 cites·20 claims
- 0291US11075124B2Semiconductor device with profiled work-function metal gate electrode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 27, 2021·2 cites·20 claims
- 0391US10504789B1Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·5 cites·20 claims
- 0488US9590065B2Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 7, 2017·6 cites·20 claims
- 0586US12142530B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 12, 2024·1 cites·20 claims
- 0685US12278288B2Fin field-effect transistor device having hybrid work function layer stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 15, 2025·0 cites·20 claims
- 0785US11538805B2Method of tuning threshold voltages of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 27, 2022·1 cites·20 claims
- 0884US12176251B2Semiconductor device with profiled work-function metal gate electrode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 0983US11302818B2Gate resistance reduction through low-resistivity conductive layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 12, 2022·2 cites·20 claims
- 1082US12237228B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 1181US12021145B2Fin field-effect transistor device having hybrid work function layer stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 1279US2024387276A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1378US12142531B2Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 1478US2025185344A1Semiconductor Device and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1577US12040235B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 1677US2024363627A1Method of tuning threshold voltages of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1776US12051753B2Fin field-effect transistor device having hybrid work function layer stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 1876US2024162349A1Gate resistance reduction through low-resistivity conductive layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1975US12087767B2Method of tuning threshold voltages of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 2075US11804409B2Semiconductor device with profiled work-function metal gate electrode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 2175US10699966B2Semiconductor device with profiled work-function metal gate electrode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 30, 2020·1 cites·20 claims
- 2274US11735481B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 2374US10867864B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·1 cites·20 claims
- 2473US11916146B2Gate resistance reduction through low-resistivity conductive layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 2573US2024387679A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2671US12300733B2Semiconductor device with a work function layer having an oxygen-blocking dopant layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 2770US11437280B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·20 claims
- 2868US9679984B2Metal gate structure with multi-layer compositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 13, 2017·2 cites·19 claims
- 2966US11322411B2Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 3, 2022·0 cites·20 claims
- 3066US11302582B2Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 12, 2022·0 cites·20 claims
- 3165US11081396B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·20 claims
- 3264US11380793B2Fin field-effect transistor device having hybrid work function layer stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 5, 2022·0 cites·20 claims
- 3364US11056395B2Transistor metal gate and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
- 3463US12087637B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 10, 2024·0 cites·20 claims
- 3562US2024363424A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3660US2025372365A1Methods of widening threshold voltage tuning range for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3759US2025301764A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3854US11387344B2Method of manufacturing a semiconductor device having a doped work-function layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·0 cites·20 claims
- 3953US10998414B2Metal gate structure with multi-layer compositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 4, 2021·0 cites·20 claims
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