Inventor · disambiguated record
Cheong Min Hong
Also filed as: HONG CHEONG · HONG CHEONG M · HONG CHEONG MIN
77 granted patents·4 pending applications·489 citations·filing 2004–2020
99Inventor score
Top patents by PatentIndex Score
81 records- 0196US8901632B1Non-volatile memory (NVM) and high-K and metal gate integration using gate-last methodologyFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Dec 2, 2014·40 cites·18 claims
- 0296US7112490B1Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trenchFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 26, 2006·48 cites·6 claims
- 0394US9275864B2Method to form a polysilicon nanocrystal thin film storage bitcell within a high k metal gate platform technology using a gate last process to form transistor gatesFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Mar 1, 2016·19 cites·12 claims
- 0494US8969940B1Method of gate strapping in split-gate memory cell with inlaid gateFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Mar 3, 2015·21 cites·20 claims
- 0594US8932925B1Split-gate non-volatile memory (NVM) cell and device structure integrationHONG CHEONG MIN·Filed 2013·Granted Jan 13, 2015·17 cites·16 claims
- 0694US7132329B1Source side injection storage device with spacer gates and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 7, 2006·22 cites·6 claims
- 0793US7821055B2Stressed semiconductor device and method for makingFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Oct 26, 2010·37 cites·20 claims
- 0892US9437500B1Method of forming supra low threshold devicesFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Sep 6, 2016·8 cites·18 claims
- 0992US8530950B1Methods and structures for split gate memoryKANG SUNG-TAEG·Filed 2012·Granted Sep 10, 2013·15 cites·20 claims
- 1092US7985649B1Method of making a semiconductor structure useful in making a split gate non-volatile memory cellFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Jul 26, 2011·18 cites·15 claims
- 1191US9653164B2Method for integrating non-volatile memory cells with static random access memory cells and logic transistorsFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted May 16, 2017·8 cites·17 claims
- 1289US9142566B2Method of forming different voltage devices with high-K metal gateFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Sep 22, 2015·10 cites·8 claims
- 1388US8877585B1Non-volatile memory (NVM) cell, high voltage transistor, and high-K and metal gate transistor integrationPERERA ASANGA H·Filed 2013·Granted Nov 4, 2014·11 cites·20 claims
- 1488US7521317B2Method of forming a semiconductor device and structure thereofFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Apr 21, 2009·16 cites·20 claims
- 1587US9368499B2Method of forming different voltage devices with high-k metal gateFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jun 14, 2016·5 cites·11 claims
- 1687US8853027B2Split gate flash cellFREESCALE SEMICONDUCTOR INC·Filed 2012·Granted Oct 7, 2014·9 cites·18 claims
- 1787US7226840B2Process for forming an electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jun 5, 2007·15 cites·20 claims
- 1886US9129996B2Non-volatile memory (NVM) cell and high-K and metal gate transistor integrationBAKER JR FRANK K·Filed 2013·Granted Sep 8, 2015·9 cites·20 claims
- 1985US7205608B2Electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 17, 2007·12 cites·19 claims
- 2084US9129855B2Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodologyFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Sep 8, 2015·7 cites·18 claims
- 2183US9082650B2Integrated split gate non-volatile memory cell and logic structurePERERA ASANGA H·Filed 2013·Granted Jul 14, 2015·7 cites·19 claims
- 2282US7572699B2Process of forming an electronic device including fins and discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 11, 2009·10 cites·20 claims
- 2381US7838922B2Electronic device including trenches and discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Nov 23, 2010·9 cites·20 claims
- 2480US8779405B2Field focusing features in a ReRAM cellZHOU FENG·Filed 2012·Granted Jul 15, 2014·4 cites·20 claims
- 2580US7651916B2Electronic device including trenches and discontinuous storage elements and processes of forming and using the sameFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jan 26, 2010·7 cites·20 claims
- 2679US9165652B2Split-gate memory cells having select-gate sidewall metal silicide regions and related manufacturing methodsKANG SUNG-TAEG·Filed 2012·Granted Oct 20, 2015·5 cites·21 claims
- 2779US7314798B2Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programmingFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jan 1, 2008·8 cites·20 claims
- 2877US9114980B2Field focusing features in a ReRAM cellZHOU FENG·Filed 2012·Granted Aug 25, 2015·3 cites·13 claims
- 2977US9111639B2Biasing split gate memory cell during power-off modeHONG CHEONG MIN·Filed 2013·Granted Aug 18, 2015·6 cites·19 claims
- 3076US8921155B2Resistive random access memory (RAM) cell and method for formingZHOU FENG·Filed 2011·Granted Dec 30, 2014·3 cites·7 claims
- 3176US7871886B2Nanocrystal memory with differential energy bands and method of formationFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Jan 18, 2011·4 cites·13 claims
- 3276US7256454B2Electronic device including discontinuous storage elements and a process for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 14, 2007·6 cites·20 claims
- 3375US9118008B2Field focusing features in a ReRAM cellZHOU FENG·Filed 2014·Granted Aug 25, 2015·2 cites·18 claims
- 3475US7459744B2Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench and a method of using the sameFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Dec 2, 2008·5 cites·20 claims
- 3574US10770539B2Fingered capacitor with low-K and ultra-low-K dielectric layersNXP BV·Filed 2018·Granted Sep 8, 2020·1 cites·20 claims
- 3672US8962416B1Split gate non-volatile memory cellWINSTEAD BRIAN A·Filed 2013·Granted Feb 24, 2015·3 cites·20 claims
- 3772US7285819B2Nonvolatile storage array with continuous control gate employing hot carrier injection programmingFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Oct 23, 2007·5 cites·9 claims
- 3870US8048738B1Method for forming a split gate deviceFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Nov 1, 2011·3 cites·13 claims
- 3970US7550348B2Source side injection storage device with spacer gates and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jun 23, 2009·3 cites·15 claims
- 4070US7262997B2Process for operating an electronic device including a memory array and conductive linesFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 28, 2007·6 cites·8 claims
- 4169US8962385B2ReRAM device structureFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Feb 24, 2015·1 cites·9 claims
- 4269US7582929B2Electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 1, 2009·4 cites·15 claims
- 4368US9548314B1Method of making a non-volatile memory (NVM) with trap-up reductionFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jan 17, 2017·2 cites·20 claims
- 4468US9006093B2Non-volatile memory (NVM) and high voltage transistor integrationHONG CHEONG MIN·Filed 2013·Granted Apr 14, 2015·2 cites·15 claims
- 4566US11404532B2Fingered capacitor with low-k and ultra-low-k dielectric layersNXP BV·Filed 2020·Granted Aug 2, 2022·0 cites·10 claims
- 4666US9252246B2Integrated split gate non-volatile memory cell and logic devicePERERA ASANGA H·Filed 2013·Granted Feb 2, 2016·2 cites·19 claims
- 4766US7471560B2Electronic device including a memory array and conductive linesFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Dec 30, 2008·5 cites·19 claims
- 4866US7235823B2Source side injection storage device with spacer gates and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jun 26, 2007·2 cites·20 claims
- 4965US8163609B2Nanocrystal memory with differential energy bands and method of formationHONG CHEONG MIN·Filed 2010·Granted Apr 24, 2012·1 cites·7 claims
- 5065US7619275B2Process for forming an electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 17, 2009·3 cites·20 claims
Showing the top 50 of 81 patent records by PatentIndex Score.
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