Inventor · disambiguated record
Karl D. Hobart
Also filed as: HOBART KARL · HOBART KARL D
72 granted patents·17 pending applications·3,138 citations·filing 1997–2025
99Inventor score
Top patents by PatentIndex Score
89 records- 0198US6323108B1Fabrication ultra-thin bonded semiconductor layersUS NAVY·Filed 1999·Granted Nov 27, 2001·391 cites·48 claims
- 0298US6242324B1Method for fabricating singe crystal materials over CMOS devicesUS NAVY·Filed 1999·Granted Jun 5, 2001·552 cites·47 claims
- 0398US6153495AAdvanced methods for making semiconductor devices by low temperature direct bondingINTERSIL CORP·Filed 1998·Granted Nov 28, 2000·516 cites·83 claims
- 0497US9246305B1Light-emitting devices with integrated diamondKUB FRANCIS J·Filed 2015·Granted Jan 26, 2016·15 cites·12 claims
- 0596US7358152B2Wafer bonding of thinned electronic materials and circuits to high performance substrateUS NAVY·Filed 2005·Granted Apr 15, 2008·33 cites·25 claims
- 0696US6497763B2Electronic device with composite substrateUS NAVY·Filed 2001·Granted Dec 24, 2002·143 cites·40 claims
- 0796US6328796B1Single-crystal material on non-single-crystalline substrateUS NAVY·Filed 1999·Granted Dec 11, 2001·280 cites·37 claims
- 0895US8900939B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlKUB FRANCIS J·Filed 2014·Granted Dec 2, 2014·17 cites·5 claims
- 0994US9006791B2III-nitride P-channel field effect transistor with hole carriers in the channelKUB FRANCIS J·Filed 2014·Granted Apr 14, 2015·12 cites·15 claims
- 1094US8384129B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlUS NAVY·Filed 2010·Granted Feb 26, 2013·19 cites·25 claims
- 1194US8039301B2Gate after diamond transistorUS NAVY·Filed 2008·Granted Oct 18, 2011·28 cites·17 claims
- 1294US6593212B1Method for making electro-optical devices using a hydrogenion splitting techniqueUS NAVY·Filed 2001·Granted Jul 15, 2003·102 cites·26 claims
- 1394US6562127B1Method of making mosaic array of thin semiconductor material of large substratesUS NAVY·Filed 2002·Granted May 13, 2003·267 cites·25 claims
- 1493US11415518B2Mapping and evaluating GaN wafers for vertical device applicationsUS GOV SEC NAVY·Filed 2020·Granted Aug 16, 2022·3 cites·12 claims
- 1593US8872159B2Graphene on semiconductor detectorKUB FRANCIS J·Filed 2012·Granted Oct 28, 2014·8 cites·29 claims
- 1693US8753468B2Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substratesCALDWELL JOSHUA D·Filed 2010·Granted Jun 17, 2014·30 cites·6 claims
- 1792US11996840B1Light controlled switch moduleUS GOV SEC NAVY·Filed 2023·Granted May 28, 2024·2 cites·20 claims
- 1892US9196614B2Inverted III-nitride P-channel field effect transistor with hole carriers in the channelKUB FRANCIS J·Filed 2015·Granted Nov 24, 2015·7 cites·15 claims
- 1991US10317210B2Whole angle MEMS gyroscope on hexagonal crystal substrateCHARLES STARK DRAPER LABORATORY INC·Filed 2016·Granted Jun 11, 2019·9 cites·32 claims
- 2091US6803598B1Si-based resonant interband tunneling diodes and method of making interband tunneling diodesUNIV DELAWARE·Filed 2000·Granted Oct 12, 2004·77 cites·53 claims
- 2191US6767749B2Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splittingUS NAVY·Filed 2002·Granted Jul 27, 2004·70 cites·20 claims
- 2289US7282753B2Vertical conducting power semiconducting devices made by deep reactive ion etchingUS NAVY·Filed 2006·Granted Oct 16, 2007·15 cites·6 claims
- 2389US6274892B1Devices formable by low temperature direct bondingINTERSIL INC·Filed 1998·Granted Aug 14, 2001·101 cites·10 claims
- 2488US9159641B2Nanocrystalline diamond three-dimensional films in patterned semiconductor substratesHOBART KARL D·Filed 2014·Granted Oct 13, 2015·8 cites·8 claims
- 2588US7759186B2Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devicesUS NAVY·Filed 2009·Granted Jul 20, 2010·14 cites·26 claims
- 2688US7132321B2Vertical conducting power semiconductor devices implemented by deep etchUS NAVY·Filed 2002·Granted Nov 7, 2006·42 cites·11 claims
- 2788US6607969B1Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniquesUS NAVY·Filed 2002·Granted Aug 19, 2003·55 cites·1 claims
- 2888US6201342B1Automatically sharp field emission cathodesUS NAVY·Filed 1997·Granted Mar 13, 2001·52 cites·13 claims
- 2987US9685513B2Semiconductor structure or device integrated with diamondKUB FRANCIS J·Filed 2013·Granted Jun 20, 2017·9 cites·20 claims
- 3086US9029833B2Graphene on semiconductor detectorKUB FRANCIS J·Filed 2014·Granted May 12, 2015·3 cites·15 claims
- 3186US7535100B2Wafer bonding of thinned electronic materials and circuits to high performance substratesUS NAVY·Filed 2003·Granted May 19, 2009·31 cites·14 claims
- 3285US10343900B2Material structure and method for deep silicon carbide etchingUS GOV SEC NAVY·Filed 2017·Granted Jul 9, 2019·3 cites·17 claims
- 3385US9466684B2Transistor with diamond gateUS NAVY·Filed 2016·Granted Oct 11, 2016·4 cites·7 claims
- 3485US8648390B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlKUB FRANCIS J·Filed 2013·Granted Feb 11, 2014·6 cites·31 claims
- 3584US9305858B2Nanocrystalline diamond three-dimensional films in patterned semiconductor substratesHOBART KARL D·Filed 2015·Granted Apr 5, 2016·4 cites·20 claims
- 3684US7902513B2Neutron detector with gamma ray isolationUS NAVY·Filed 2009·Granted Mar 8, 2011·14 cites·25 claims
- 3784US6194290B1Methods for making semiconductor devices by low temperature direct bondingINTERSIL CORP·Filed 1998·Granted Feb 27, 2001·74 cites·35 claims
- 3884US6113451AAtomically sharp field emission cathodesUS NAVY·Filed 1999·Granted Sep 5, 2000·38 cites·8 claims
- 3983US9331163B2Transistor with diamond gateKOEHLER ANDREW D·Filed 2014·Granted May 3, 2016·8 cites·11 claims
- 4080US9960266B2Damage-free plasma-enhanced CVD passivation of AlGaN/GaN high electron mobility transistorsUS NAVY·Filed 2017·Granted May 1, 2018·3 cites·27 claims
- 4180US2025338640A1Low resistance light controlled semiconductor switch (lcss)US GOV SEC NAVY·Filed 2025·Application pending·0 cites
- 4278US12376388B2Low resistance photoconductive semiconductor switch (PCSS)US GOV SEC NAVY·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 4378US9490356B2Growth of high-performance III-nitride transistor passivation layer for GaN electronicsUS NAVY·Filed 2016·Granted Nov 8, 2016·2 cites·17 claims
- 4478US6555451B1Method for making shallow diffusion junctions in semiconductors using elemental dopingUS NAVY·Filed 2001·Granted Apr 29, 2003·22 cites·39 claims
- 4577US9275998B2Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channelKUB FRANCIS J·Filed 2014·Granted Mar 1, 2016·2 cites·19 claims
- 4673US10777644B2Heterojunction devices and methods for fabricating the sameUS GOV SEC NAVY·Filed 2018·Granted Sep 15, 2020·1 cites·15 claims
- 4772US9196703B2Selective deposition of diamond in thermal viasNORTHROP GRUMMAN SYSTEMS CORP·Filed 2014·Granted Nov 24, 2015·3 cites·20 claims
- 4871US8008626B2Neutron detector with gamma ray isolationUS NAVY·Filed 2011·Granted Aug 30, 2011·3 cites·26 claims
- 4971US6787885B2Low temperature hydrophobic direct wafer bondingUS NAVY·Filed 2002·Granted Sep 7, 2004·17 cites·10 claims
- 5070US8445383B2Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devicesHOBART KARL D·Filed 2008·Granted May 21, 2013·5 cites·16 claims
Showing the top 50 of 89 patent records by PatentIndex Score.
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