Inventor · disambiguated record
Janardhanan S. Ajit
Also filed as: AJIT JANARDHANAN S
63 granted patents·2 pending applications·2,354 citations·filing 1994–2009
99Inventor score
Top patents by PatentIndex Score
65 records- 0199US6207994B1High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 1999·Granted Mar 27, 2001·367 cites·7 claims
- 0297US6168983B1Method of making a high-voltage transistor with multiple lateral conduction layersPOWER INTEGRATIONS INC·Filed 1999·Granted Jan 2, 2001·323 cites·45 claims
- 0396US6828631B2High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2004·Granted Dec 7, 2004·75 cites·13 claims
- 0496US6724041B2Method of making a high-voltage transistor with buried conduction regionsPOWER INTEGRATIONS INC·Filed 2002·Granted Apr 20, 2004·70 cites·20 claims
- 0596US6570219B1High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2000·Granted May 27, 2003·83 cites·58 claims
- 0695US6777749B2High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2003·Granted Aug 17, 2004·58 cites·7 claims
- 0795US5581100ATrench depletion MOSFETINT RECTIFIER CORP·Filed 1994·Granted Dec 3, 1996·131 cites·20 claims
- 0894US6768172B2High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2003·Granted Jul 27, 2004·55 cites·14 claims
- 0994US6639277B2High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2001·Granted Oct 28, 2003·93 cites·19 claims
- 1094US6633065B2High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2001·Granted Oct 14, 2003·59 cites·30 claims
- 1193US6800903B2High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2001·Granted Oct 5, 2004·54 cites·19 claims
- 1293US6787437B2Method of making a high-voltage transistor with buried conduction regionsPOWER INTEGRATIONS INC·Filed 2002·Granted Sep 7, 2004·57 cites·12 claims
- 1392US7746124B2Sub-micron high input voltage tolerant input output (I/O) circuitBROADCOM CORP·Filed 2009·Granted Jun 29, 2010·12 cites·11 claims
- 1492US6844755B2Methods and systems for sensing and compensating for process, voltage, temperature, and load variationsBROADCOM CORP·Filed 2003·Granted Jan 18, 2005·39 cites·10 claims
- 1592US5877515ASiC semiconductor deviceINT RECTIFIER CORP·Filed 1996·Granted Mar 2, 1999·97 cites·46 claims
- 1691US6628149B2Sub-micron high input voltage tolerant input output (I/O) circuitBROADCOM CORP·Filed 2002·Granted Sep 30, 2003·33 cites·4 claims
- 1789US6859074B2I/O circuit using low voltage transistors which can tolerate high voltages even when power supplies are powered offBROADCOM CORP·Filed 2003·Granted Feb 22, 2005·31 cites·7 claims
- 1886US5557127ATermination structure for mosgated device with reduced mask count and process for its manufactureINT RECTIFIER CORP·Filed 1995·Granted Sep 17, 1996·71 cites·18 claims
- 1985US6424510B1ESD structure for IC with over-voltage capability at pad in steady-stateEXAR CORP·Filed 2000·Granted Jul 23, 2002·38 cites·14 claims
- 2083US6930528B2Delay circuit and method with delay relatively independent of process, voltage, and temperature variationsBROADCOM CORP·Filed 2004·Granted Aug 16, 2005·18 cites·14 claims
- 2182US6906552B2System and method utilizing a one-stage level shift circuitBROADCOM CORP·Filed 2002·Granted Jun 14, 2005·20 cites·24 claims
- 2281US5629535ABidirectional thyristor with MOS turn-on and turn-off capabilityINT RECTIFIER CORP·Filed 1996·Granted May 13, 1997·40 cites·13 claims
- 2380US6670821B2Methods and systems for sensing and compensating for process, voltage, temperature, and load variationsBROADCOM CORP·Filed 2002·Granted Dec 30, 2003·20 cites·24 claims
- 2480US6646488B2Delay circuit with delay relatively independent of process, voltage, and temperature variationsBROADCOM CORP·Filed 2002·Granted Nov 11, 2003·16 cites·49 claims
- 2580US5719411AThree-terminal MOS-gate controlled thyristor structures with current saturation characteristicsINT RECTIFIER CORP·Filed 1995·Granted Feb 17, 1998·41 cites·43 claims
- 2680US5474946AReduced mask process for manufacture of MOS gated devicesINT RECTIFIER CORP·Filed 1995·Granted Dec 12, 1995·41 cites·15 claims
- 2779US5910664AEmitter-switched transistor structuresINT RECTIFIER CORP·Filed 1997·Granted Jun 8, 1999·45 cites·17 claims
- 2878US7002379B2I/O circuit using low voltage transistors which can tolerate high voltages even when power supplies are powered offBROADCOM CORP·Filed 2004·Granted Feb 21, 2006·16 cites·2 claims
- 2978US6313672B1Over-voltage tolerant integrated circuit I/O bufferEXAR CORP·Filed 1999·Granted Nov 6, 2001·35 cites·8 claims
- 3075US5783474AReduced mask process for manufacture of MOS gated devices using dopant-enhanced-oxidation of semiconductorINT RECTIFIER CORP·Filed 1995·Granted Jul 21, 1998·33 cites·25 claims
- 3174US7112998B2Method utilizing a one-stage level shift circuitBROADCOM CORP·Filed 2005·Granted Sep 26, 2006·6 cites·8 claims
- 3274US5483087ABidirectional thyristor with MOS turn-off capability with a single gateINT RECTIFIER CORP·Filed 1994·Granted Jan 9, 1996·28 cites·22 claims
- 3371US6359484B1Slew-rate-control structure for high-frequency operationEXAR CORP·Filed 2000·Granted Mar 19, 2002·14 cites·16 claims
- 3470US5793066ABase resistance controlled thyristor structure with high-density layout for increased current capacityINT RECTIFIER CORP·Filed 1995·Granted Aug 11, 1998·31 cites·14 claims
- 3569US6985015B2Sub-micron high input voltage tolerant input output (I/O) circuitBROADCOM CORP·Filed 2004·Granted Jan 10, 2006·7 cites·8 claims
- 3669US5623151AMOS-gated power semiconductor devices with conductivity modulation by positive feedback mechanismINT RECTIFIER CORP·Filed 1995·Granted Apr 22, 1997·31 cites·8 claims
- 3763US6856176B2Sub-micron high input voltage tolerant input output (I/O) circuitBROADCOM CORP·Filed 2003·Granted Feb 15, 2005·5 cites·4 claims
- 3863US5757034AEmitter switched thyristorINT RECTIFIER CORP·Filed 1996·Granted May 26, 1998·22 cites·7 claims
- 3962US5757033ABidirectional thyristor with MOS turn-off capability with a single gateINT RECTIFIER CORP·Filed 1995·Granted May 26, 1998·17 cites·8 claims
- 4060US7123460B2Methods and systems for reducing power-on failure of integrated circuitsBROADCOM CORP·Filed 2004·Granted Oct 17, 2006·7 cites·15 claims
- 4159US7138836B2Hot carrier injection suppression circuitBROADCOM CORP·Filed 2002·Granted Nov 21, 2006·8 cites·19 claims
- 4259US6815995B2Delay circuit and method with delay relatively independent of process, voltage, and temperature variationsBROADCOM CORP·Filed 2003·Granted Nov 9, 2004·5 cites·10 claims
- 4359US6313671B1Low-power integrated circuit I/O bufferEXAR CORP·Filed 1999·Granted Nov 6, 2001·16 cites·8 claims
- 4458US5498884AMOS-controlled thyristor with current saturation characteristicsINT RECTIFIER CORP·Filed 1994·Granted Mar 12, 1996·18 cites·24 claims
- 4557US6914456B2Sub-micron high input voltage tolerant input output (I/O) circuitBROADCOM CORP·Filed 2002·Granted Jul 5, 2005·3 cites·9 claims
- 4657US6839211B2Methods and systems for reducing power-on failure of integrated circuitsBROADCOM CORP·Filed 2002·Granted Jan 4, 2005·6 cites·31 claims
- 4757US6310385B1High band gap layer to isolate wells in high voltage power integrated circuitsINT RECTIFIER CORP·Filed 1998·Granted Oct 30, 2001·14 cites·16 claims
- 4856US6985014B2System and method for compensating for the effects of process, voltage, and temperature variations in a circuitBROADCOM CORP·Filed 2002·Granted Jan 10, 2006·6 cites·16 claims
- 4956US6847248B2Sub-micron high input voltage tolerant input output (I/O) circuit which accommodates large power supply variationsBROADCOM CORP·Filed 2002·Granted Jan 25, 2005·3 cites·14 claims
- 5054US6690199B2Methods and systems for providing load-adaptive output current driveBROADCOM CORP·Filed 2002·Granted Feb 10, 2004·5 cites·17 claims
Showing the top 50 of 65 patent records by PatentIndex Score.
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