Inventor · disambiguated record
Hi-Choon Lee
Also filed as: LEE HI-CHOON
33 granted patents·2 pending applications·380 citations·filing 1997–2024
97Inventor score
Top patents by PatentIndex Score
35 records- 0194US6611466B2Semiconductor memory device capable of adjusting the number of banks and method for adjusting the number of banksSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 26, 2003·121 cites·11 claims
- 0288US9685238B2Clock signal generation device and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 20, 2017·7 cites·20 claims
- 0382US6046624AInternal power supply generating circuit for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Apr 4, 2000·42 cites·4 claims
- 0477US7460418B2Semiconductor memory device for stack package and read data skew control method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 2, 2008·10 cites·11 claims
- 0576US7420861B2Semiconductor memory device and data read and write method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 2, 2008·5 cites·38 claims
- 0675US7248517B2Semiconductor memory device having local data line pair with delayed precharge voltage application pointSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 24, 2007·10 cites·11 claims
- 0774US6064622AColumn select line control circuit for synchronous semiconductor memory device and associated methodsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 16, 2000·34 cites·8 claims
- 0871US6058495AMulti-bit test circuit in semiconductor memory device and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted May 2, 2000·31 cites·15 claims
- 0968US7800961B2Word line driver and semiconductor memory device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 21, 2010·9 cites·20 claims
- 1068US6426902B1Semiconductor memory device having redundancy circuit capable of improving redundancy efficiencySAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 30, 2002·17 cites·20 claims
- 1167US7107467B2Semiconductor memory device having a circuit for removing noise from a power line of the memory device using a plurality of decoupling capactorsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 12, 2006·15 cites·20 claims
- 1266US8228704B2Stacked semiconductor chip package with shared DLL signal and method for fabricating stacked semiconductor chip package with shared DLL signalCHOO CHUL-HWAN·Filed 2008·Granted Jul 24, 2012·8 cites·6 claims
- 1364US7477715B2Delay-locked loop circuit of a semiconductor device and method of controlling the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 13, 2009·5 cites·15 claims
- 1461US7154796B2Semiconductor memory device and data read and write method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 26, 2006·6 cites·33 claims
- 1560US7336550B2Semiconductor memory device with reduced multi-row address testingSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 26, 2008·4 cites·16 claims
- 1659US7574636B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 11, 2009·4 cites·27 claims
- 1759US6928008B2Semiconductor memory devices with data line redundancy schemes and method thereforeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 9, 2005·10 cites·10 claims
- 1855US2025220896A1MemoryCXMT CORP·Filed 2024·Application pending·0 cites
- 1951US7961535B2Test circuit and method for use in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 14, 2011·2 cites·13 claims
- 2051US7755958B2Semiconductor memory device and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 13, 2010·2 cites·21 claims
- 2151US7487414B2Parallel bit test circuits for testing semiconductor memory devices and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 3, 2009·2 cites·23 claims
- 2250US6870780B2Semiconductor memory device having improved redundancy schemeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 22, 2005·6 cites·10 claims
- 2348US6785171B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 31, 2004·6 cites·9 claims
- 2447US6798703B2Semiconductor memory device having improved replacement efficiency of defective word lines by redundancy word linesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 28, 2004·5 cites·19 claims
- 2547US6122220ACircuits and methods for generating internal signals for integrated circuits by dynamic inversion and resettingSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Sep 19, 2000·11 cites·27 claims
- 2646US6236616B1Semiconductor memory device having data input/output line shared by a plurality of banksSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 22, 2001·5 cites·17 claims
- 2743US7701744B2Method of arranging fuses in a fuse box of a semiconductor memory device and a semiconductor memory device including such an arrangementSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 20, 2010·0 cites·15 claims
- 2842US7978002B2Voltage boosting circuit and semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 12, 2011·0 cites·8 claims
- 2942US6909665B2Semiconductor memory device having high-speed input/output architectureSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 21, 2005·3 cites·4 claims
- 3041US7969796B2High voltage generating circuit and semiconductor memory device having the same and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 28, 2011·0 cites·18 claims
- 3139US8010765B2Semiconductor memory device and method for controlling clock latency according to reordering of burst dataSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 30, 2011·0 cites·16 claims
- 3239US7335957B2Semiconductor memory integrated circuit and layout method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 26, 2008·0 cites·14 claims
- 3338US7480196B2Semiconductor device generating a test voltage for a wafer burn-in test and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 20, 2009·0 cites·19 claims
- 3438US2008111593A1Power-up reset circuits and semiconductor devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3537US8339870B2High voltage generating circuit and semiconductor memory device having the same and method thereofKWON SANG-HYUK·Filed 2011·Granted Dec 25, 2012·0 cites·8 claims
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