Inventor · disambiguated record
Naoto Umezawa
Also filed as: UMEZAWA NAOTO
5 granted patents·2 pending applications·5 citations·filing 2012–2022
68Inventor score
Top patents by PatentIndex Score
7 records- 0174US8575038B2Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide filmUMEZAWA NAOTO·Filed 2012·Granted Nov 5, 2013·4 cites·10 claims
- 0265US12453162B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 0364US8759925B2Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide filmNAT INST FOR MATERIALS SCIENCE·Filed 2013·Granted Jun 24, 2014·1 cites·5 claims
- 0462US11329137B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 10, 2022·0 cites·20 claims
- 0550US2022207393A1Method of predicting semiconductor material properties and method of testing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 0642US12181799B2Resist compositions and semiconductor fabrication methods using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 31, 2024·0 cites·22 claims
- 0737US2014060887A1Transparent electric conductorSINGH LAURA JANE·Filed 2012·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →