Inventor
NOGUCHI TAKASHI
JP168 patents
⚠️ This page may combine multiple inventors who share the name “NOGUCHI TAKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SONY CORP
30 patentsUS6682965B1Jan 27, 2004
Method of forming n-and p- channel field effect transistors on the same silicon layer having a strain effect
SONY CORP111 citations99
US6005270ADec 21, 1999
Semiconductor nonvolatile memory device and method of production of same
SONY CORP167 citations99
US5529951AJun 25, 1996
Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation
SONY CORP303 citations99
US5219786AJun 15, 1993
Semiconductor layer annealing method using excimer laser
SONY CORP181 citations99
US6649980B2Nov 18, 2003
Semiconductor device with MOS transistors sharing electrode
SONY CORP81 citations98
US6548830B1Apr 15, 2003
Semiconductor device formed of single crystal grains in a grid pattern
SONY CORP91 citations98
US6071765AJun 6, 2000
Method of forming polycrystalline silicon layer on substrate and surface treatment apparatus thereof
SONY CORP105 citations98
US5943593AAug 24, 1999
Method for fabricating thin film transistor device
SONY CORP172 citations98
US5869803AFeb 9, 1999
Method of forming polycrystalline silicon layer on substrate and surface treatment apparatus thereof
SONY CORP104 citations98
US5817548AOct 6, 1998
Method for fabricating thin film transistor device
SONY CORP168 citations98
US5767003AJun 16, 1998
Thin film semiconductor device manufacturing method
SONY CORP114 citations98
US5373803ADec 20, 1994
Method of epitaxial growth of semiconductor
SONY CORP128 citations98
US6750486B2Jun 15, 2004
Semiconductor and fabrication method thereof
SONY CORP63 citations96
US6285055B1Sep 4, 2001
Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device
SONY CORP71 citations96
US6190949B1Feb 20, 2001
Silicon thin film, group of silicon single crystal grains and formation process thereof, and semiconductor device, flash memory cell and fabrication process thereof
SONY CORP78 citations96
US6172380B1Jan 9, 2001
Semiconductor material
SONY CORP56 citations96
US6080643AJun 27, 2000
Elimination of dehydrogenation step when forming a silicon thin film device by low-temperature laser-annealing
SONY CORP83 citations96
US5663579ASep 2, 1997
Method of growing single semiconductor crystal and semiconductor device with single semiconductor crystal
SONY CORP43 citations96
US4463383AJul 31, 1984
Image pickup apparatus
SONY CORP57 citations96
US5391503AFeb 21, 1995
Method of forming a stacked semiconductor device wherein semiconductor layers and insulating films are sequentially stacked and forming openings through such films and etchings using one of the insulating films as a mask
SONY CORP59 citations95
US5140391AAug 18, 1992
Thin film MOS transistor having pair of gate electrodes opposing across semiconductor layer
SONY CORP68 citations95
US5828084AOct 27, 1998
High performance poly-SiGe thin film transistor
SONY CORP46 citations94
US4693759ASep 15, 1987
Method of forming a thin semiconductor film
SONY CORP88 citations94
US5627086AMay 6, 1997
Method of forming thin-film single crystal for semiconductor
SONY CORP26 citations93
US5382537AJan 17, 1995
Method of making thin film transistors
SONY CORP43 citations93
US6410412B1Jun 25, 2002
Methods for fabricating memory devices
SONY CORP28 citations92
US5643806AJul 1, 1997
Manufacturing method for making bipolar device
SONY CORP23 citations92
US5541124AJul 30, 1996
Method for making bipolar transistor having double polysilicon structure
SONY CORP39 citations92
US4466018AAug 14, 1984
Image pickup apparatus with gain controlled output amplifier
SONY CORP36 citations92
US6638797B2Oct 28, 2003
High performance poly-SiGe thin film transistor and a method of fabricating such a thin film transistor
SONY CORP23 citations91
SAMSUNG ELECTRONICS CO LTD
4 patentsUS7563659B2Jul 21, 2009
Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same
SAMSUNG ELECTRONICS CO LTD259 citations99
US7566364B2Jul 28, 2009
Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same
SAMSUNG ELECTRONICS CO LTD28 citations93
US7479442B2Jan 20, 2009
Method of manufacturing single crystal Si film
SAMSUNG ELECTRONICS CO LTD25 citations93
US7297615B2Nov 20, 2007
Si nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same
SAMSUNG ELECTRONICS CO LTD32 citations93
OKI ELECTRIC IND CO LTD
4 patentsUS6107679AAug 22, 2000
Semiconductor device
OKI ELECTRIC IND CO LTD174 citations99
US7352063B2Apr 1, 2008
Semiconductor structure that includes a cooling structure formed on a semiconductor surface and method of manufacturing the same
OKI ELECTRIC IND CO LTD20 citations93
US6707166B1Mar 16, 2004
Semiconductor devices and manufacturing method thereof
OKI ELECTRIC IND CO LTD37 citations93
US6707151B2Mar 16, 2004
Semiconductor device
OKI ELECTRIC IND CO LTD23 citations93
NISSAN MOTOR
4 patentsFUJI XEROX CO LTD
2 patentsTSUBAKIMOTO CHAIN CO
2 patentsOKI SEMICONDUCTOR CO LTD
1 patentMINIGRIP INC
1 patentKANSAI PAINT CO LTD
1 patentNIPPON DENSO CO
1 patentShowing the top 50 of 168 patents by PatentIndex Score.