Inventor · disambiguated record
Che-Chia Wei
Also filed as: WEI CHE C · WEI CHE-CHIA
50 granted patents·1,975 citations·filing 1986–1999
99Inventor score
Files withSGS THOMSON MICROELECTRONICS20TEXAS INSTRUMENTS INC14ST MICROELECTRONICS INC9CHARTERED SEMICONDUCTOR MFG5CHARTERED SEMICONDUCTOR MFG CO1
Top patents by PatentIndex Score
50 records- 0196US4657628AProcess for patterning local interconnectsTEXAS INSTRUMENTS INC·Filed 1986·Granted Apr 14, 1987·213 cites·11 claims
- 0295US5010032AProcess for making CMOS device with both P+ and N+ gates including refractory metal silicide and nitride interconnectsTEXAS INSTRUMENTS INC·Filed 1989·Granted Apr 23, 1991·107 cites·22 claims
- 0395US4975756ASRAM with local interconnectTEXAS INSTRUMENTS INC·Filed 1989·Granted Dec 4, 1990·181 cites·4 claims
- 0494US4963502AMethod of making oxide-isolated source/drain transistorTEXAS INSTRUMENTS INC·Filed 1989·Granted Oct 16, 1990·101 cites·7 claims
- 0593US4690730AOxide-capped titanium silicide formationTEXAS INSTRUMENTS INC·Filed 1986·Granted Sep 1, 1987·87 cites·55 claims
- 0690US4890141ACMOS device with both p+ and n+ gatesTEXAS INSTRUMENTS INC·Filed 1988·Granted Dec 26, 1989·62 cites·41 claims
- 0789US4788160AProcess for formation of shallow silicided junctionsTEXAS INSTRUMENTS INC·Filed 1987·Granted Nov 29, 1988·92 cites·28 claims
- 0888US5276347AGate overlapping LDD structureSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Jan 4, 1994·73 cites·8 claims
- 0987US5610083AMethod of making back gate contact for silicon on insulator technologyCHARTERED SEMICONDUCTOR MFG·Filed 1996·Granted Mar 11, 1997·98 cites·28 claims
- 1086US5260229AMethod of forming isolated regions of oxideSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Nov 9, 1993·86 cites·13 claims
- 1186US5108951AMethod for forming a metal contactSGS THOMSON MICROELECTRONICS·Filed 1990·Granted Apr 28, 1992·80 cites·19 claims
- 1286US5043778AOxide-isolated source/drain transistorTEXAS INSTRUMENTS INC·Filed 1988·Granted Aug 27, 1991·76 cites·48 claims
- 1384US4920073ASelective silicidation process using a titanium nitride protective layerTEXAS INSTRUMENTS INC·Filed 1989·Granted Apr 24, 1990·67 cites·8 claims
- 1484US4746219ALocal interconnectTEXAS INSTRUMENTS INC·Filed 1986·Granted May 24, 1988·68 cites·16 claims
- 1584US4676866AProcess to increase tin thicknessTEXAS INSTRUMENTS INC·Filed 1986·Granted Jun 30, 1987·67 cites·19 claims
- 1678US5488244AElectrically erasable and programmable read only memory cellCHARTERED SIMICONDUCTOR MANUFA·Filed 1995·Granted Jan 30, 1996·49 cites·24 claims
- 1775US5841195ASemiconductor contact via structureST MICROELECTRONICS INC·Filed 1995·Granted Nov 24, 1998·45 cites·24 claims
- 1873US5326724AOxide-capped titanium silicide formationTEXAS INSTRUMENTS INC·Filed 1991·Granted Jul 5, 1994·33 cites·20 claims
- 1973US5304504AMethod of forming a gate overlap LDD structureSGS THOMSON MICROELECTRONICS·Filed 1993·Granted Apr 19, 1994·30 cites·13 claims
- 2072US5278098AMethod for self-aligned polysilicon contact formationSGS THOMSON MICROELECTRONICS·Filed 1992·Granted Jan 11, 1994·36 cites·7 claims
- 2171US5173450ATitanium silicide local interconnect processTEXAS INSTRUMENTS INC·Filed 1991·Granted Dec 22, 1992·43 cites·17 claims
- 2270US5124280ALocal interconnect for integrated circuitsSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Jun 23, 1992·35 cites·10 claims
- 2362US5837587AMethod of forming an integrated circuit deviceSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Nov 17, 1998·16 cites·8 claims
- 2460US5677238ASemiconductor contact metallizationCHARTERED SEMICONDUCTOR MFG·Filed 1996·Granted Oct 14, 1997·27 cites·12 claims
- 2556US5246883ASemiconductor contact via structure and methodSGS THOMSON MICROELECTRONICS·Filed 1992·Granted Sep 21, 1993·22 cites·15 claims
- 2655US5369303ASelf-aligned contact processSGS THOMSON MICROELECTRONICS·Filed 1993·Granted Nov 29, 1994·19 cites·7 claims
- 2750US5317192ASemiconductor contact via structure having amorphous silicon side wallsSGS THOMSON MICROELECTRONICS·Filed 1992·Granted May 31, 1994·15 cites·8 claims
- 2850US5166770ASilicided structures having openings thereinTEXAS INSTRUMENTS INC·Filed 1987·Granted Nov 24, 1992·12 cites·6 claims
- 2949US5894158AHaving halo regions integrated circuit device structureST MICROELECTRONICS INC·Filed 1991·Granted Apr 13, 1999·9 cites·21 claims
- 3049US5349229ALocal interconnect for integrated circuitsSGS THOMSON MICROELECTRONICS·Filed 1992·Granted Sep 20, 1994·15 cites·4 claims
- 3146US6159836AMethod for forming programmable contact structureST MICROELECTRONICS INC·Filed 1995·Granted Dec 12, 2000·13 cites·6 claims
- 3246US5346860AMethod for fabricating an interconnect structure in an integrated circuitSGS THOMSON MICROELECTRONICS·Filed 1993·Granted Sep 13, 1994·12 cites·9 claims
- 3344US5444019ASemiconductor contact via structure and methodSGS THOMSON MICROELECTRONICS·Filed 1993·Granted Aug 22, 1995·11 cites·6 claims
- 3442US5595935AMethod for forming interconnect in integrated circuitsSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Jan 21, 1997·9 cites·28 claims
- 3540US5624871AMethod for making electrical local interconnectsCHARTERED SEMICONDUCTOR MFG·Filed 1996·Granted Apr 29, 1997·12 cites·19 claims
- 3639US6617242B1Method for fabricating interlevel contacts of aluminum/refractory metal alloysST MICROELECTRONICS INC·Filed 1995·Granted Sep 9, 2003·6 cites·19 claims
- 3738US6242811B1Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperatureST MICROELECTRONICS INC·Filed 1998·Granted Jun 5, 2001·5 cites·11 claims
- 3838US5313084AInterconnect structure for an integrated circuitSGS THOMSON MICROELECTRONICS·Filed 1992·Granted May 17, 1994·7 cites·4 claims
- 3936US6307248B1Definition of anti-fuse cell for programmable gate array applicationCHARTERED SEMICONDUCTOR MFG CO·Filed 1999·Granted Oct 23, 2001·4 cites·20 claims
- 4036US6287963B1Method for forming a metal contactST MICROELECTRONICS INC·Filed 1995·Granted Sep 11, 2001·5 cites·21 claims
- 4136US5930673AMethod for forming a metal contactST MICROELECTRONICS INC·Filed 1995·Granted Jul 27, 1999·4 cites·39 claims
- 4235US5434448AProgrammable contact structureSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Jul 18, 1995·6 cites·11 claims
- 4334US6027979AMethod of forming an integrated circuit deviceST MICROELECTRONICS INC·Filed 1998·Granted Feb 22, 2000·2 cites·6 claims
- 4434US5506440APoly-buffered LOCOS processSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Apr 9, 1996·5 cites·5 claims
- 4533US6313034B1Method for forming integrated circuit device structures from semiconductor substrate oxidation mask layersCHARTERED SEMICONDUCTOR MFG·Filed 1995·Granted Nov 6, 2001·3 cites·7 claims
- 4632US5977607AMethod of forming isolated regions of oxideST MICROELECTRONICS INC·Filed 1995·Granted Nov 2, 1999·2 cites·1 claims
- 4731US5500382ASelf-aligned contact processSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Mar 19, 1996·2 cites·39 claims
- 4830US5500557AStructure and method for fabricating integrated circuitsSGS THOMSON MICROELECTRONICS·Filed 1993·Granted Mar 19, 1996·0 cites·20 claims
- 4929US5491355ASelf-aligned contact formationSGS THOMSON MICROELECTRONICS·Filed 1993·Granted Feb 13, 1996·2 cites·10 claims
- 5027US5923075ADefinition of anti-fuse cell for programmable gate array applicationCHARTERED SEMICONDUCTOR MFG·Filed 1996·Granted Jul 13, 1999·1 cites·30 claims
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