Inventor · disambiguated record
Chih-Yuan Lu
Also filed as: LU CHIH Y · LU CHIH YUAN
72 granted patents·3 pending applications·3,679 citations·filing 1987–2019
99Inventor score
Files withVANGUARD INT SEMICONDUCT CORP25IND TECH RES INST18MACRONIX INT CO LTD12AT & T BELL LAB7AMERICAN TELEPHONE & TELEGRAPH3
Top patents by PatentIndex Score
75 records- 0199US6850432B2Laser programmable electrically readable phase-change memory method and deviceMACRONIX INT CO LTD·Filed 2002·Granted Feb 1, 2005·277 cites·27 claims
- 0298US6171923B1Method for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitorVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Jan 9, 2001·219 cites·12 claims
- 0398US5943581AMethod of fabricating a buried reservoir capacitor structure for high-density dynamic random access memory (DRAM) circuitsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Aug 24, 1999·322 cites·26 claims
- 0498US5396093AVertical DRAM cross point memory cell and fabrication methodIND TECH RES INST·Filed 1994·Granted Mar 7, 1995·148 cites·9 claims
- 0598US5110752ARoughened polysilicon surface capacitor electrode plate for high denity dramIND TECH RES INST·Filed 1991·Granted May 5, 1992·208 cites·17 claims
- 0698US4952524ASemiconductor device manufacture including trench formationAT & T BELL LAB·Filed 1989·Granted Aug 28, 1990·345 cites·13 claims
- 0797US7158411B2Integrated code and data flash memoryMACRONIX INT CO LTD·Filed 2004·Granted Jan 2, 2007·116 cites·61 claims
- 0896US6057573ADesign for high density memory with relaxed metal pitchVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted May 2, 2000·209 cites·6 claims
- 0995US5843820AMethod of fabricating a new dynamic random access memory (DRAM) cell having a buried horizontal trench capacitorVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Dec 1, 1998·99 cites·30 claims
- 1091US7236394B2Transistor-free random access memoryMACRONIX INT CO LTD·Filed 2003·Granted Jun 26, 2007·61 cites·16 claims
- 1191US5153145AFet with gate spacerAT & T BELL LAB·Filed 1989·Granted Oct 6, 1992·61 cites·5 claims
- 1290US5362665AMethod of making vertical DRAM cross point memory cellIND TECH RES INST·Filed 1994·Granted Nov 8, 1994·60 cites·23 claims
- 1388US5827394AStep and repeat exposure method for loosening integrated circuit dice from a radiation sensitive adhesive tape backingVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Oct 27, 1998·91 cites·11 claims
- 1487US6479341B1Capacitor over metal DRAM structureVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Nov 12, 2002·69 cites·29 claims
- 1587US5595928AHigh density dynamic random access memory cell structure having a polysilicon pillar capacitorVANGUARD INT SEMICONDUCT CORP·Filed 1995·Granted Jan 21, 1997·64 cites·19 claims
- 1686US6218693B1Dynamic random access memory (DRAM) cell having a buried horizontal trench capacitor by a novel fabrication methodVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Apr 17, 2001·46 cites·12 claims
- 1786US5429978AMethod of forming a high density self-aligned stack in trenchIND TECH RES INST·Filed 1994·Granted Jul 4, 1995·47 cites·21 claims
- 1884US5652165AMethod of forming a stacked capacitor with a double wall crown shapeVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Jul 29, 1997·49 cites·23 claims
- 1984US5594682AHigh density self-aligned stack in trench DRAM technologyIND TECH RES INST·Filed 1995·Granted Jan 14, 1997·43 cites·7 claims
- 2083US6180453B1Method to fabricate a DRAM cell with an area equal to five times the minimum used feature, squaredVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jan 30, 2001·53 cites·24 claims
- 2182US4886765AMethod of making silicides by heating in oxygen to remove contaminationAMERICAN TELEPHONE & TELEGRAPH·Filed 1988·Granted Dec 12, 1989·41 cites·10 claims
- 2280US5976945AMethod for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitorVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Nov 2, 1999·39 cites·24 claims
- 2380US5792680AMethod of forming a low cost DRAM cell with self aligned twin tub CMOS devices and a pillar shaped capacitorVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Aug 11, 1998·44 cites·22 claims
- 2479US5679589AFET with gate spacerLUCENT TECHNOLOGIES INC·Filed 1992·Granted Oct 21, 1997·38 cites·4 claims
- 2579US5395784AMethod of manufacturing low leakage and long retention time DRAMIND TECH RES INST·Filed 1993·Granted Mar 7, 1995·40 cites·15 claims
- 2678US5933725AWord line resistance reduction method and design for high density memory with relaxed metal pitchVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Aug 3, 1999·49 cites·14 claims
- 2778US5789316ASelf-aligned method for forming a narrow viaVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Aug 4, 1998·55 cites·18 claims
- 2878US5086017ASelf aligned silicide process for gate/runner without extra maskingIND TECH RES INST·Filed 1991·Granted Feb 4, 1992·43 cites·14 claims
- 2977US5821142AMethod for forming a capacitor with a multiple pillar structureVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Oct 13, 1998·35 cites·17 claims
- 3076US5332467AChemical/mechanical polishing for ULSI planarizationIND TECH RES INST·Filed 1993·Granted Jul 26, 1994·61 cites·20 claims
- 3175US7132350B2Method for manufacturing a programmable eraseless memoryMACRONIX INT CO LTD·Filed 2003·Granted Nov 7, 2006·13 cites·31 claims
- 3274US7180123B2Method for programming programmable eraseless memoryMACRONIX INT CO LTD·Filed 2003·Granted Feb 20, 2007·19 cites·56 claims
- 3374US7180767B2Multi-level memory device and methods for programming and reading the sameMACRONIX INT CO LTD·Filed 2003·Granted Feb 20, 2007·20 cites·2 claims
- 3472US5196367AModified field isolation process with no channel-stop implant encroachmentIND TECH RES INST·Filed 1991·Granted Mar 23, 1993·47 cites·16 claims
- 3572US5036378AMemory deviceAT & T BELL LAB·Filed 1989·Granted Jul 30, 1991·28 cites·3 claims
- 3672US4922311AFolded extended window field effect transistorAMERICAN TELEPHONE & TELEGRAPH·Filed 1989·Granted May 1, 1990·38 cites·9 claims
- 3771US5451537AMethod of forming a DRAM stack capacitor with ladder storage nodeIND TECH RES INST·Filed 1994·Granted Sep 19, 1995·27 cites·23 claims
- 3870US5534460AOptimized contact plug processVANGUARD INT SEMICONDUCT CORP·Filed 1995·Granted Jul 9, 1996·31 cites·20 claims
- 3970US5519238ARippled polysilicon surface capacitor electrode plate for high density dramIND TECH RES INST·Filed 1993·Granted May 21, 1996·38 cites·12 claims
- 4070US4844776AMethod for making folded extended window field effect transistorAMERICAN TELEPHONE & TELEGRAPH·Filed 1987·Granted Jul 4, 1989·35 cites·10 claims
- 4166US5350336ABuilding and method for manufacture of integrated semiconductor circuit devicesIND TECH RES INST·Filed 1993·Granted Sep 27, 1994·49 cites·18 claims
- 4266US5213992ARippled polysilicon surface capacitor electrode plate for high density DRAMIND TECH RES INST·Filed 1991·Granted May 25, 1993·35 cites·25 claims
- 4365US5759894AMethod for forming a DRAM capacitor using HSG-SiVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Jun 2, 1998·25 cites·20 claims
- 4465US5663093AMethod for forming a cylindrical capacitor having a central spineVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Sep 2, 1997·22 cites·18 claims
- 4563US5679596ASpot deposited polysilicon for the fabrication of high capacitance, DRAM devicesVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Oct 21, 1997·20 cites·25 claims
- 4663US5552620AVertical transistor with high density DRAM cell and method of makingIND TECH RES INST·Filed 1995·Granted Sep 3, 1996·25 cites·7 claims
- 4762US5280190ASelf aligned emitter/runner integrated circuitIND TECH RES INST·Filed 1992·Granted Jan 18, 1994·21 cites·7 claims
- 4860US4933297AMethod for etching windows having different depthsAT & T BELL LAB·Filed 1989·Granted Jun 12, 1990·24 cites·6 claims
- 4957US11370703B2Glass substrate processing methodsCORNING INC·Filed 2019·Granted Jun 28, 2022·0 cites·20 claims
- 5055US5550077ADRAM cell with a comb-type capacitorVANGUARD INT SEMICONDUCT CORP·Filed 1995·Granted Aug 27, 1996·16 cites·16 claims
Showing the top 50 of 75 patent records by PatentIndex Score.
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