Inventor · disambiguated record
Ruojia Lee
Also filed as: LEE RUOJIA · LEE RUOJIA R
48 granted patents·2 pending applications·2,773 citations·filing 1988–2006
99Inventor score
Top patents by PatentIndex Score
50 records- 0198US5241496AArray of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cellsMICRON TECHNOLOGY INC·Filed 1991·Granted Aug 31, 1993·262 cites·16 claims
- 0298US5122848AInsulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitanceMICRON TECHNOLOGY INC·Filed 1991·Granted Jun 16, 1992·263 cites·17 claims
- 0398US5013680AProcess for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithographyMICRON TECHNOLOGY INC·Filed 1990·Granted May 7, 1991·461 cites·21 claims
- 0496US5250450AInsulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitanceMICRON TECHNOLOGY INC·Filed 1992·Granted Oct 5, 1993·166 cites·19 claims
- 0593US5331196AOne-time, voltage-programmable, logic elementMICRON TECHNOLOGY INC·Filed 1993·Granted Jul 19, 1994·92 cites·6 claims
- 0692US5252504AReverse polysilicon CMOS fabricationMICRON TECHNOLOGY INC·Filed 1992·Granted Oct 12, 1993·83 cites·20 claims
- 0792US4971655AProtection of a refractory metal silicide during high-temperature processing using a dual-layer cap of silicon dioxide and silicon nitrideMICRON TECHNOLOGY INC·Filed 1989·Granted Nov 20, 1990·119 cites·10 claims
- 0889US5043780ADRAM cell having a texturized polysilicon lower capacitor plate for increased capacitanceMICRON TECHNOLOGY INC·Filed 1990·Granted Aug 27, 1991·70 cites·5 claims
- 0987US5177030AMethod of making self-aligned vertical intrinsic resistanceMICRON TECHNOLOGY INC·Filed 1991·Granted Jan 5, 1993·67 cites·19 claims
- 1087US4959325AReduction of electric field effect in the bird's beak region of a DRAM cell following expansion of active region through local encroachment reductionMICRON TECHNOLOGY INC·Filed 1989·Granted Sep 25, 1990·70 cites·7 claims
- 1186US5240796AMethod of fabricating a chromeless phase shift reticleMICRON TECHNOLOGY INC·Filed 1991·Granted Aug 31, 1993·47 cites·19 claims
- 1284US5371701AStacked delta cell capacitorMICRON TECHNOLOGY INC·Filed 1994·Granted Dec 6, 1994·43 cites·9 claims
- 1384US4981810AProcess for creating field effect transistors having reduced-slope, staircase-profile sidewall spacersMICRON TECHNOLOGY INC·Filed 1990·Granted Jan 1, 1991·58 cites·6 claims
- 1483US5266510AHigh performance sub-micron p-channel transistor with germanium implantMICRON TECHNOLOGY INC·Filed 1990·Granted Nov 30, 1993·73 cites·11 claims
- 1583US5037773AStacked capacitor doping technique making use of rugged polysiliconMICRON TECHNOLOGY INC·Filed 1990·Granted Aug 6, 1991·83 cites·16 claims
- 1681US5149665AConductive source line for high density programmable read-only memory applicationsMICRON TECHNOLOGY INC·Filed 1991·Granted Sep 22, 1992·43 cites·10 claims
- 1778US5126290AMethod of making memory devices utilizing one-sided ozone teos spacersMICRON TECHNOLOGY INC·Filed 1991·Granted Jun 30, 1992·57 cites·8 claims
- 1876US5089867AHigh control gate/floating gate coupling for EPROMs, E2 PROMs, and Flash E2 PROMsMICRON TECHNOLOGY INC·Filed 1991·Granted Feb 18, 1992·39 cites·22 claims
- 1975US5321285ACarrier injection dynamic random access memory having stacked depletion region in MesaMICRON TECHNOLOGY INC·Filed 1992·Granted Jun 14, 1994·38 cites·6 claims
- 2075US5241206ASelf-aligned vertical intrinsic resistanceMICRON TECHNOLOGY INC·Filed 1992·Granted Aug 31, 1993·36 cites·21 claims
- 2175US5023190ACMOS processesMICRON TECHNOLOGY INC·Filed 1990·Granted Jun 11, 1991·39 cites·18 claims
- 2274US5257238ADynamic memory having access transistor turn-off stateMICRON TECHNOLOGY INC·Filed 1991·Granted Oct 26, 1993·35 cites·11 claims
- 2373US6787428B2Aluminum-filled self-aligned trench for stacked capacitor structure and methodsMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 7, 2004·11 cites·43 claims
- 2472US5077225AProcess for fabricating a stacked capacitor within a monolithic integrated circuit using oxygen implantationMICRON TECHNOLOGY INC·Filed 1991·Granted Dec 31, 1991·34 cites·15 claims
- 2571US4924119AElectrically programmable erasable inverter device with deprogramming limitationMICRON TECHNOLOGY INC·Filed 1988·Granted May 8, 1990·27 cites·19 claims
- 2670US5192872ACell structure for erasable programmable read-only memoriesMICRON TECHNOLOGY INC·Filed 1991·Granted Mar 9, 1993·29 cites·22 claims
- 2770US5026657ASplit-polysilicon CMOS DRAM process incorporating self-aligned silicidation of the cell plate, transistor gates, and N+ regionsMICRON TECHNOLOGY INC·Filed 1990·Granted Jun 25, 1991·33 cites·10 claims
- 2868US5286993AOne-sided ozone TEOS spacerMICRON TECHNOLOGY INC·Filed 1992·Granted Feb 15, 1994·35 cites·14 claims
- 2968US5069747ACreation and removal of temporary silicon dioxide structures on an in-process integrated circuit with minimal effect on exposed, permanent silicon dioxide structuresMICRON TECHNOLOGY INC·Filed 1990·Granted Dec 3, 1991·41 cites·9 claims
- 3066US5208176AMethod of fabricating an enhanced dynamic random access memory (DRAM) cell capacitor using multiple polysilicon texturizationMICRON TECHNOLOGY INC·Filed 1990·Granted May 4, 1993·40 cites·12 claims
- 3165US5227321AMethod for forming MOS transistorsMICRON TECHNOLOGY INC·Filed 1992·Granted Jul 13, 1993·43 cites·18 claims
- 3265US4839301ABlanket CMOS channel stop implant employing a combination of n-channel and p-channel punch-through implantsMICRON TECHNOLOGY INC·Filed 1988·Granted Jun 13, 1989·30 cites·4 claims
- 3364US5155057AStacked v-cell capacitor using a disposable composite dielectric on top of a digit lineMICRON TECHNOLOGY INC·Filed 1990·Granted Oct 13, 1992·23 cites·12 claims
- 3464US5024961ABlanket punchthrough and field-isolation implant for sub-micron N-channel CMOS devicesMICRON TECHNOLOGY INC·Filed 1990·Granted Jun 18, 1991·36 cites·6 claims
- 3562US5196364AMethod of making a stacked capacitor dram cellMICRON TECHNOLOGY INC·Filed 1990·Granted Mar 23, 1993·22 cites·13 claims
- 3662US5073509ABlanket CMOS channel-stop implantMICRON TECHNOLOGY INC·Filed 1989·Granted Dec 17, 1991·26 cites·10 claims
- 3761US6720605B1Aluminum-filled self-aligned trench for stacked capacitor structure and methodsMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 13, 2004·6 cites·16 claims
- 3861US5321648AStacked V-cell capacitor using a disposable outer digit line spacerMICRON TECHNOLOGY INC·Filed 1993·Granted Jun 14, 1994·17 cites·5 claims
- 3960US7057285B2Aluminum interconnects with metal silicide diffusion barriersMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 6, 2006·5 cites·12 claims
- 4056US6465319B1Aluminum-filled self-aligned trench for stacked capacitor structure and methodsMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 15, 2002·4 cites·40 claims
- 4152US5266513AMethod of making stacked W-cell capacitorMICRON TECHNOLOGY INC·Filed 1992·Granted Nov 30, 1993·15 cites·9 claims
- 4250US2006237821A1Interconnects including members integral with bit lines, as well as metal nitride and metal silicide, and methods for fabricating interconnects and semiconductor device structures including the interconnectsLEE RUOJIA·Filed 2006·Application pending·0 cites
- 4348US5236855AStacked V-cell capacitor using a disposable outer digit line spacerMICRON TECHNOLOGY INC·Filed 1990·Granted Aug 17, 1993·11 cites·10 claims
- 4447US6165863AAluminum-filled self-aligned trench for stacked capacitor structure and methodsMICRON TECHNOLOGY INC·Filed 1998·Granted Dec 26, 2000·6 cites·11 claims
- 4546US2006264007A1High quality oxide on an epitaxial layerMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 4645US5321649AStacked delta cell capacitorMICRON TECHNOLOGY INC·Filed 1993·Granted Jun 14, 1994·10 cites·16 claims
- 4744US5219778AStacked V-cell capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Jun 15, 1993·10 cites·19 claims
- 4841US5066606AImplant method for advanced stacked capacitorsMICRON TECHNOLOGY INC·Filed 1990·Granted Nov 19, 1991·9 cites·20 claims
- 4939US7232728B1High quality oxide on an epitaxial layerMICRON TECHNOLOGY INC·Filed 1996·Granted Jun 19, 2007·5 cites·24 claims
- 5032USRE35828EAnti-fuse circuit and method wherein the read operation and programming operation are reversedMICRON TECHNOLOGY INC·Filed 1996·Granted Jun 23, 1998·1 cites·21 claims
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