Inventor · disambiguated record
Sheng-Hsing Yang
Also filed as: YANG SHENG-HSING
48 granted patents·965 citations·filing 1993–2004
98Inventor score
Files withUNITED MICROELECTRONICS CORP45CHUNG SHAN INST OF SCIENCE1UNITED MICRELECTRONICS CORP1UNITED MICROFLECTRONICS CORP1
Top patents by PatentIndex Score
48 records- 0197US5442214AVDMOS transistor and manufacturing method thereforUNITED MICROELECTRONICS CORP·Filed 1994·Granted Aug 15, 1995·174 cites·5 claims
- 0297US5424231AMethod for manufacturing a VDMOS transistorUNITED MICROELECTRONICS CORP·Filed 1994·Granted Jun 13, 1995·171 cites·12 claims
- 0382US5614421AMethod of fabricating junction termination extension structure for high-voltage diode devicesUNITED MICROELECTRONICS CORP·Filed 1994·Granted Mar 25, 1997·54 cites·6 claims
- 0482US5501996AMethod of manufacture of high coupling ratio single polysilicon floating gate EPROM or EEPROM cellUNITED MICROELECTRONICS CORP·Filed 1994·Granted Mar 26, 1996·54 cites·30 claims
- 0581US5466616AMethod of producing an LDMOS transistor having reduced dimensions, reduced leakage, and a reduced propensity to latch-upUNITED MICROELECTRONICS CORP·Filed 1994·Granted Nov 14, 1995·43 cites·7 claims
- 0676US6153913AElectrostatic discharge protection circuitUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 28, 2000·36 cites·13 claims
- 0774US5424233AMethod of making electrically programmable and erasable memory device with a depressionUNITED MICROFLECTRONICS CORP·Filed 1994·Granted Jun 13, 1995·37 cites·25 claims
- 0874US5376572AMethod of making an electrically erasable programmable memory device with improved erase and write operationUNITED MICROELECTRONICS CORP·Filed 1994·Granted Dec 27, 1994·33 cites·26 claims
- 0965US5382820AHigh voltage CMOS device to integrate low voltage controlling deviceUNITED MICROELECTRONICS CORP·Filed 1993·Granted Jan 17, 1995·26 cites·31 claims
- 1060US6306711B1Method of fabricating a high-voltage lateral double diffused metal oxide semiconductorUNITED MICROELECTRONICS CORP·Filed 1998·Granted Oct 23, 2001·20 cites·26 claims
- 1155US6867732B1Embedded multi-functional preprocessing input data buffer in radar systemCHUNG SHAN INST OF SCIENCE·Filed 2004·Granted Mar 15, 2005·13 cites·12 claims
- 1255US6063674AMethod for forming high voltage deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted May 16, 2000·15 cites·6 claims
- 1355US5395777AMethod of producing VDMOS transistorsUNITED MICROELECTRONICS CORP·Filed 1994·Granted Mar 7, 1995·14 cites·7 claims
- 1454US5482873AMethod for fabricating a bipolar power transistorUNITED MICROELECTRONICS CORP·Filed 1995·Granted Jan 9, 1996·19 cites·6 claims
- 1553US5574306ALateral bipolar transistor and FETUNITED MICROELECTRONICS CORP·Filed 1995·Granted Nov 12, 1996·16 cites·16 claims
- 1653US5455188AProcess for fabricating a lateral bipolar junction transistorUNITED MICROELECTRONICS CORP·Filed 1995·Granted Oct 3, 1995·18 cites·6 claims
- 1750US5518938AProcess for fabricating a CMOS transistor having high-voltage metal-gateUNITED MICROELECTRONICS CORP·Filed 1995·Granted May 21, 1996·15 cites·16 claims
- 1849US5444002AMethod of fabricating a short-channel DMOS transistor with removable sidewall spacersUNITED MICROELECTRONICS CORP·Filed 1993·Granted Aug 22, 1995·12 cites·2 claims
- 1949US5376568AMethod of fabricating high voltage complementary metal oxide semiconductor transistorsUNITED MICROELECTRONICS CORP·Filed 1994·Granted Dec 27, 1994·12 cites·4 claims
- 2048US5393679AUse of double charge implant to improve retrograde process PMOS punch through voltageUNITED MICROELECTRONICS CORP·Filed 1994·Granted Feb 28, 1995·11 cites·10 claims
- 2147US5569613AMethod of making bipolar junction transistorUNITED MICROELECTRONICS CORP·Filed 1995·Granted Oct 29, 1996·11 cites·5 claims
- 2247US5508547ALDMOS transistor with reduced projective area of source regionUNITED MICROELECTRONICS CORP·Filed 1994·Granted Apr 16, 1996·9 cites·3 claims
- 2347US5422286AProcess for fabricating high-voltage semiconductor power deviceUNITED MICROELECTRONICS CORP·Filed 1994·Granted Jun 6, 1995·16 cites·15 claims
- 2445US6165852AMethod of fabricating integration of high-voltage devices and low-voltage devicesUNITED MICROELECTRONICS CORP·Filed 2000·Granted Dec 26, 2000·3 cites·17 claims
- 2544US5576569AElectrically programmable and erasable memory device with depression in lightly-doped sourceUNITED MICROELECTRONICS CORP·Filed 1995·Granted Nov 19, 1996·11 cites·8 claims
- 2644US5486482AProcess for fabricating metal-gate CMOS transistorUNITED MICROELECTRONICS CORP·Filed 1995·Granted Jan 23, 1996·9 cites·10 claims
- 2742US5478760AProcess for fabricating a vertical bipolar junction transistorUNITED MICROELECTRONICS CORP·Filed 1995·Granted Dec 26, 1995·10 cites·7 claims
- 2842US5451805AVDMOS transistor with reduced projective area of source regionUNITED MICROELECTRONICS CORP·Filed 1994·Granted Sep 19, 1995·7 cites·3 claims
- 2941US5550064AMethod for fabricating high-voltage complementary metal-oxide-semiconductor transistorsUNITED MICROELECTRONICS CORP·Filed 1995·Granted Aug 27, 1996·7 cites·5 claims
- 3041US5547895AMethod of fabricating a metal gate MOS transistor with self-aligned first conductivity type source and drain regions and second conductivity type contact regionsUNITED MICROELECTRONICS CORP·Filed 1994·Granted Aug 20, 1996·8 cites·16 claims
- 3141US5401682AMethod of fabricating high voltage junction termination extension structure for a semiconductor integrated circuit deviceUNITED MICROELECTRONICS CORP·Filed 1994·Granted Mar 28, 1995·8 cites·13 claims
- 3240US5523246AMethod of fabricating a high-voltage metal-gate CMOS deviceUNITED MICROELECTRONICS CORP·Filed 1995·Granted Jun 4, 1996·8 cites·5 claims
- 3339US5498553AMethod of making a metal gate high voltage integrated circuitUNITED MICROELECTRONICS CORP·Filed 1993·Granted Mar 12, 1996·5 cites·14 claims
- 3437US5554543AProcess for fabricating bipolar junction transistor having reduced parasitic capacitanceUNITED MICROELECTRONICS CORP·Filed 1995·Granted Sep 10, 1996·6 cites·7 claims
- 3537US5489541AProcess of fabricating a bipolar junction transistorUNITED MICROELECTRONICS CORP·Filed 1995·Granted Feb 6, 1996·7 cites·12 claims
- 3637US5360750AMethod of fabricating lateral bipolar transistorsUNITED MICROELECTRONICS CORP·Filed 1994·Granted Nov 1, 1994·5 cites·4 claims
- 3736US5686347ASelf isolation manufacturing methodUNITED MICROELECTRONICS CORP·Filed 1994·Granted Nov 11, 1997·7 cites·34 claims
- 3836US5624857AProcess for fabricating double well regions in semiconductor devicesUNITED MICROELECTRONICS CORP·Filed 1995·Granted Apr 29, 1997·4 cites·8 claims
- 3935US5514890AElectrically erasable programmable memory device with improved erase and write operationUNITED MICROELECTRONICS CORP·Filed 1994·Granted May 7, 1996·7 cites·14 claims
- 4034US6174760B1Method of improving vertical BJT gainUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jan 16, 2001·4 cites·13 claims
- 4134US6040601AHigh voltage deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted Mar 21, 2000·3 cites·20 claims
- 4234US5966608AMethod of forming high voltage deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted Oct 12, 1999·3 cites·15 claims
- 4334US5589411AProcess for fabricating a high-voltage MOSFETUNITED MICROELECTRONICS CORP·Filed 1995·Granted Dec 31, 1996·3 cites·7 claims
- 4433US6269315B1Reliability testing method of dielectric thin filmUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 31, 2001·5 cites·12 claims
- 4531US5449627ALateral bipolar transistor and FET compatible process for making itUNITED MICROELECTRONICS CORP·Filed 1994·Granted Sep 12, 1995·2 cites·10 claims
- 4630US6255809B1Method for measuring capacitance of passive device regionUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 3, 2001·1 cites·4 claims
- 4730US5894155AMetal gate high voltage integrated circuit/processUNITED MICROELECTRONICS CORP·Filed 1997·Granted Apr 13, 1999·0 cites·17 claims
- 4821US6205013B1Multi-layer metallization capacitive structure for reduction of the simultaneous switching noise in integrated circuitsUNITED MICRELECTRONICS CORP·Filed 1998·Granted Mar 20, 2001·3 cites·12 claims
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