Inventor · disambiguated record
Ryousuke Takizawa
Also filed as: TAKIZAWA RYOUSUKE
27 granted patents·4 pending applications·109 citations·filing 2004–2023
95Inventor score
Top patents by PatentIndex Score
31 records- 0197US9324457B2Nonvolatile memoryTOSHIBA KK·Filed 2014·Granted Apr 26, 2016·36 cites·20 claims
- 0288US7969768B2Magnetic random access memoryTOSHIBA KK·Filed 2009·Granted Jun 28, 2011·20 cites·13 claims
- 0384US8988933B2Semiconductor memory device and driving method of the sameTAKIZAWA RYOUSUKE·Filed 2012·Granted Mar 24, 2015·7 cites·20 claims
- 0482US12406727B2Memory deviceKIOXIA CORP·Filed 2023·Granted Sep 2, 2025·1 cites·20 claims
- 0579US9595311B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2014·Granted Mar 14, 2017·6 cites·20 claims
- 0678US10755752B2Memory device that performs a read operation and a test operationTOSHIBA MEMORY CORP·Filed 2019·Granted Aug 25, 2020·4 cites·20 claims
- 0776US9256523B2Semiconductor storage device and control method thereofTAKIZAWA RYOUSUKE·Filed 2012·Granted Feb 9, 2016·5 cites·20 claims
- 0875US9355702B2Semiconductor memory device and driving method of the sameTOSHIBA KK·Filed 2015·Granted May 31, 2016·3 cites·16 claims
- 0972US7633795B2Magnetoresistive random access memory and its write control methodTOSHIBA KK·Filed 2006·Granted Dec 15, 2009·8 cites·12 claims
- 1067US9536621B2Nonvolatile memoryTOSHIBA KK·Filed 2016·Granted Jan 3, 2017·2 cites·11 claims
- 1167US7269060B2Magnetic random access memoryTOSHIBA KK·Filed 2005·Granted Sep 11, 2007·6 cites·20 claims
- 1264US10964368B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Mar 30, 2021·1 cites·20 claims
- 1364US8351237B2Ferroelectric random access memory and memory systemTOSHIBA KK·Filed 2010·Granted Jan 8, 2013·2 cites·10 claims
- 1458US11651808B2Semiconductor memory deviceKIOXIA CORP·Filed 2021·Granted May 16, 2023·0 cites·6 claims
- 1558US8799744B2Nonvolatile semiconductor memory and memory systemTAKIZAWA RYOUSUKE·Filed 2012·Granted Aug 5, 2014·2 cites·20 claims
- 1654US9582414B2Semiconductor storage device and control method thereofTOSHIBA KK·Filed 2016·Granted Feb 28, 2017·0 cites·6 claims
- 1753US12230322B2Memory device including memory cell including variable resistance element and switching elementKIOXIA CORP·Filed 2022·Granted Feb 18, 2025·0 cites·17 claims
- 1847US9606743B2Semiconductor memory device and driving method of the sameTOSHIBA KK·Filed 2016·Granted Mar 28, 2017·0 cites·17 claims
- 1946US11264072B2Memory deviceKIOXIA CORP·Filed 2020·Granted Mar 1, 2022·0 cites·19 claims
- 2046USRE46296EFerroelectric random access memory and memory systemTOSHIBA KK·Filed 2015·Granted Jan 31, 2017·0 cites·40 claims
- 2146US8559206B2Ferroelectric random access memory and memory systemTOSHIBA KK·Filed 2013·Granted Oct 15, 2013·0 cites·20 claims
- 2246US8125816B2Semiconductor storage deviceTAKIZAWA RYOUSUKE·Filed 2009·Granted Feb 28, 2012·1 cites·9 claims
- 2345US11935591B2Voltage applications to a memory cell including a resistance change memory element in series with a two-terminal switching elementKIOXIA CORP·Filed 2021·Granted Mar 19, 2024·0 cites·15 claims
- 2443US7054188B2Magnetic memory deviceTOSHIBA KK·Filed 2004·Granted May 30, 2006·3 cites·18 claims
- 2541US10741233B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Aug 11, 2020·0 cites·17 claims
- 2640US7006374B2Magnetic memory device and method of reading informationTOSHIBA KK·Filed 2004·Granted Feb 28, 2006·2 cites·17 claims
- 2739US8374017B2Ferroelectric memory device and method with reference potential correction capacitor(s)TOSHIBA KK·Filed 2009·Granted Feb 12, 2013·0 cites·15 claims
- 2838US2009323390A1Semiconductor memory deviceTOSHIBA KK·Filed 2009·Application pending·0 cites
- 2937US2014289446A1Memory system and memoryTOSHIBA KK·Filed 2013·Application pending·0 cites
- 3034US2012069629A1Semiconductor memory deviceUEDA YOSHIHIRO·Filed 2011·Application pending·0 cites
- 3133US2017263299A1Semiconductor memory deviceTOSHIBA KK·Filed 2016·Application pending·0 cites
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