Inventor
KANG PIL-KYU
KR56 patents
⚠️ This page may combine multiple inventors who share the name “KANG PIL-KYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
30 patentsUS9941243B2Apr 10, 2018
Wafer-to-wafer bonding structure
SAMSUNG ELECTRONICS CO LTD237 citations99
US9461007B2Oct 4, 2016
Wafer-to-wafer bonding structure
SAMSUNG ELECTRONICS CO LTD239 citations99
US8343851B2Jan 1, 2013
Wafer temporary bonding method using silicon direct bonding
SAMSUNG ELECTRONICS CO LTD239 citations99
US8354308B2Jan 15, 2013
Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrate
SAMSUNG ELECTRONICS CO LTD230 citations98
US8053829B2Nov 8, 2011
Methods of fabricating nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD208 citations98
US9865581B2Jan 9, 2018
Method of fabricating multi-substrate semiconductor devices
SAMSUNG ELECTRONICS CO LTD25 citations93
US9520361B2Dec 13, 2016
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD28 citations93
US8866187B2Oct 21, 2014
Photodetector structures including cross-sectional waveguide boundaries
SAMSUNG ELECTRONICS CO LTD29 citations92
US10468400B2Nov 5, 2019
Method of manufacturing substrate structure
SAMSUNG ELECTRONICS CO LTD8 citations84
US9935037B2Apr 3, 2018
Multi-stacked device having TSV structure
SAMSUNG ELECTRONICS CO LTD13 citations84
US9070748B2Jun 30, 2015
Semiconductor devices having through-vias and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US8941216B2Jan 27, 2015
Semiconductor devices having through-vias and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US9530706B2Dec 27, 2016
Semiconductor devices having hybrid stacking structures and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD13 citations83
US8927426B2Jan 6, 2015
Semiconductor devices having through-vias and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations83
US9773660B2Sep 26, 2017
Wafer processing methods
SAMSUNG ELECTRONICS CO LTD3 citations73
US9236349B2Jan 12, 2016
Semiconductor device including through via structures and redistribution structures
SAMSUNG ELECTRONICS CO LTD6 citations73
US11121080B2Sep 14, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations72
US10639875B2May 5, 2020
Wafer bonding apparatus and wafer bonding system including the same
SAMSUNG ELECTRONICS CO LTD6 citations72
US9287251B2Mar 15, 2016
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11152317B2Oct 19, 2021
Semiconductor device including interconnection structure including copper and tin and semiconductor package including the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US9312171B2Apr 12, 2016
Semiconductor devices having through-electrodes and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US8048784B2Nov 1, 2011
Methods of manufacturing semiconductor devices including a doped silicon layer
SAMSUNG ELECTRONICS CO LTD2 citations63
US11610838B2Mar 21, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12136602B2Nov 5, 2024
Method of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations61
US11283235B2Mar 22, 2022
Semiconductor laser device
SAMSUNG ELECTRONICS CO LTD0 citations61
US9831164B2Nov 28, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US9362172B2Jun 7, 2016
Semiconductor devices having through-vias and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US8867882B2Oct 21, 2014
Optical input/output device for photo-electric integrated circuit device and method of fabricating same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7470603B2Dec 30, 2008
Methods of fabricating semiconductor devices having laser-formed single crystalline active structures
SAMSUNG ELECTRONICS CO LTD1 citations52
US11901356B2Feb 13, 2024
Three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations51
KANG PIL-KYU
8 patentsUS8163616B2Apr 24, 2012
Methods of manufacturing nonvolatile memory devices
KANG PIL-KYU31 citations91
US8873901B2Oct 28, 2014
Buried-type optical input/output devices and methods of manufacturing the same
KANG PIL-KYU6 citations84
US8129833B2Mar 6, 2012
Stacked integrated circuit packages that include monolithic conductive vias
KANG PIL-KYU13 citations84
US9103974B2Aug 11, 2015
Semiconductor devices having optical transceiver
KANG PIL-KYU5 citations73
US9847276B2Dec 19, 2017
Semiconductor devices having through-electrodes and methods for fabricating the same
KANG PIL-KYU5 citations72
US8422845B2Apr 16, 2013
Optical input/output device for photo-electric integrated circuit device and method of fabricating same
KANG PIL-KYU4 citations62
US8319329B2Nov 27, 2012
Stacked integrated circuit package having recessed sidewalls
KANG PIL-KYU3 citations62
US8735265B2May 27, 2014
Methods of selectively forming silicon-on-insulator structures using selective expitaxial growth process
KANG PIL-KYU0 citations52
LEE HO-JIN
3 patentsUS8952543B2Feb 10, 2015
Via connection structures, semiconductor devices having the same, and methods of fabricating the structures and devices
LEE HO-JIN15 citations84
US9171753B2Oct 27, 2015
Semiconductor devices having conductive via structures and methods for fabricating the same
LEE HO-JIN7 citations83
US8564139B2Oct 22, 2013
Semiconductor devices including protected barrier layers
LEE HO-JIN4 citations62
JI HO-CHUL
2 patentsMOON KWANG-JIN
2 patentsJUNG DEOK-YOUNG
2 patentsUS8963336B2Feb 24, 2015
Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same
JUNG DEOK-YOUNG12 citations82
US9064941B2Jun 23, 2015
Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same
JUNG DEOK-YOUNG5 citations71
SHIN DONG-JAE
1 patentKIM TAEYEONG
1 patentPARK YOUNG-SOO
1 patentShowing the top 50 of 56 patents by PatentIndex Score.