Inventor · disambiguated record
Quan Wangxiao
Also filed as: WANGXIAO QUAN
1 granted patent·1 pending application·6 citations·filing 2008–2008
30Inventor score
Files withSAMSUNG ELECTRONICS CO LTD2
Top patents by PatentIndex Score
2 records- 0175US7863152B2Semiconductor device structure with strain layer and method of fabricating the semiconductor device structureSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 4, 2011·6 cites·9 claims
- 0240US2008216041A1Integrated circuit simulation method considering stress effectsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →