Inventor · disambiguated record
Vladimir Tsukanov
Also filed as: TSUKANOV VLADIMIR
12 granted patents·128 citations·filing 2001–2018
90Inventor score
Top patents by PatentIndex Score
12 records- 0194US10090751B1Gate driver for switching converter having body diode power loss minimizationIXYS LLC·Filed 2018·Granted Oct 2, 2018·21 cites·23 claims
- 0293US9419118B1Trench IGBT with tub-shaped floating P-well and hole drains to P-body regionsIXYS CORP·Filed 2015·Granted Aug 16, 2016·12 cites·19 claims
- 0389US6683344B2Rugged and fast power MOSFET and IGBTIXYS CORP·Filed 2002·Granted Jan 27, 2004·44 cites·24 claims
- 0487US8344480B2Insulated gate bipolar transistorIXYS CORP·Filed 2009·Granted Jan 1, 2013·14 cites·28 claims
- 0579US8741709B2Vertical power MOSFET and IGBT fabrication process with two fewer photomasksSEOK KYOUNG WOOK·Filed 2011·Granted Jun 3, 2014·5 cites·18 claims
- 0673US10439483B2Gate driver for switching converter having body diode power loss minimizationLITTELFUSE INC·Filed 2018·Granted Oct 8, 2019·2 cites·10 claims
- 0773US6710405B2Non-uniform power semiconductor deviceIXYS CORP·Filed 2001·Granted Mar 23, 2004·16 cites·36 claims
- 0865US7157338B2Non-uniform power semiconductor and method for making non-uniform power semiconductorIXYS CORP·Filed 2004·Granted Jan 2, 2007·10 cites·14 claims
- 0958USRE42864ERugged and fast power MOSFET and IGBTIXYS CORP·Filed 2006·Granted Oct 25, 2011·1 cites·34 claims
- 1052US8900943B2Vertical power MOSFET and IGBT fabrication process with two fewer photomasksIXYS CORP·Filed 2014·Granted Dec 2, 2014·0 cites·20 claims
- 1149US9627521B1Trench IGBT with tub-shaped floating P-well and hole drains to P-body regionsIXYS CORP·Filed 2016·Granted Apr 18, 2017·0 cites·22 claims
- 1247US7063975B2Shallow trench power MOSFET and IGBTIXYS CORP·Filed 2003·Granted Jun 20, 2006·3 cites·5 claims
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