Inventor · disambiguated record
Nobuo Machida
Also filed as: MACHIDA NOBUO
38 granted patents·15 pending applications·320 citations·filing 1980–2024
97Inventor score
Files withRENESAS ELECTRONICS CORP26RENESAS TECH CORP7INAGAWA HIROSHI5HITACHI LTD3TAIPEI ANJET CORP3
Top patents by PatentIndex Score
53 records- 0196US7361557B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS TECH CORP·Filed 2007·Granted Apr 22, 2008·26 cites·6 claims
- 0293US6638850B1Method of fabricating a semiconductor device having a trench-gate structureHITACHI LTD·Filed 2000·Granted Oct 28, 2003·56 cites·2 claims
- 0391US6455378B1Method of manufacturing a trench gate power transistor with a thick bottom insulatorHITACHI LTD·Filed 2000·Granted Sep 24, 2002·70 cites·10 claims
- 0489US7098506B2Semiconductor device and method for fabricating the sameHITACHI ULSI SYS CO LTD·Filed 2005·Granted Aug 29, 2006·10 cites·8 claims
- 0589US4357512AApparatus for continuous manufacture of butt-welded pipeSUMITOMO METAL IND·Filed 1980·Granted Nov 2, 1982·50 cites·19 claims
- 0684US11489047B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2020·Granted Nov 1, 2022·1 cites·11 claims
- 0784US8524552B2Normally-off power JFET and manufacturing method thereofARAI KOICHI·Filed 2012·Granted Sep 3, 2013·6 cites·16 claims
- 0884US6858896B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS TECH CORP·Filed 2002·Granted Feb 22, 2005·19 cites·15 claims
- 0983US8704291B2Semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Apr 22, 2014·3 cites·11 claims
- 1081US8378413B2Semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2011·Granted Feb 19, 2013·3 cites·12 claims
- 1181US7910985B2Semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2010·Granted Mar 22, 2011·3 cites·12 claims
- 1281US6861703B2Semiconductor device and method for fabricating the sameRENESAS TECH CORP·Filed 2003·Granted Mar 1, 2005·19 cites·9 claims
- 1379US8642401B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Feb 4, 2014·2 cites·6 claims
- 1479US2024290881A1Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1579US2025015138A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1678US8278708B2Insulated gate type semiconductor device and method for fabricating the sameINAGAWA HIROSHI·Filed 2012·Granted Oct 2, 2012·2 cites·8 claims
- 1778US8148224B2Insulated gate type semiconductor device and method for fabricating the sameINAGAWA HIROSHI·Filed 2011·Granted Apr 3, 2012·2 cites·12 claims
- 1877US6706604B2Method of manufacturing a trench MOS gate deviceHITACHI LTD·Filed 2002·Granted Mar 16, 2004·18 cites·10 claims
- 1977US2024204098A1Semiconductor device having semiconductor regions in epitaxial drift layerRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2074US2023369414A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 2173US8569132B2Semiconductor device and manufacturing method thereofMACHIDA NOBUO·Filed 2012·Granted Oct 29, 2013·5 cites·7 claims
- 2273US2023077367A1Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 2372US8377775B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2012·Granted Feb 19, 2013·1 cites·8 claims
- 2472US7910990B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2010·Granted Mar 22, 2011·1 cites·4 claims
- 2571US8168498B2Insulated gate type semiconductor device and method for fabricating the sameINAGAWA HIROSHI·Filed 2010·Granted May 1, 2012·1 cites·10 claims
- 2670US7358141B2Semiconductor device and method for fabricating the sameRENESAS TECH CORP·Filed 2006·Granted Apr 15, 2008·2 cites·19 claims
- 2768US7172941B2Insulated gate type semiconductor device and method for fabricating the sameHITACHI TOBU SEMICONDUCTOR LTD·Filed 2004·Granted Feb 6, 2007·7 cites·1 claims
- 2867US7843001B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2009·Granted Nov 30, 2010·1 cites·6 claims
- 2966US11769841B2Junction barrier Schottky diode device and method for fabricating the sameTAIPEI ANJET CORP·Filed 2022·Granted Sep 26, 2023·0 cites·9 claims
- 3066US7585732B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS TECH CORP·Filed 2008·Granted Sep 8, 2009·1 cites·8 claims
- 3164US11646382B2Junction barrier Schottky diode device and method for fabricating the sameTAIPEI ANJET CORP·Filed 2021·Granted May 9, 2023·0 cites·11 claims
- 3264US7151035B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2002·Granted Dec 19, 2006·11 cites·11 claims
- 3364US2021217888A1Semiconductor device having a transistorRENESAS ELECTRONICS CORP·Filed 2021·Application pending·0 cites
- 3463US2021074816A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2020·Application pending·0 cites
- 3561US9793342B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Oct 17, 2017·0 cites·3 claims
- 3661US9246000B2Insulated gate type semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Jan 26, 2016·0 cites·4 claims
- 3760US11276784B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2020·Granted Mar 15, 2022·0 cites·6 claims
- 3860US8987810B2Semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2014·Granted Mar 24, 2015·0 cites·6 claims
- 3958US10896980B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2019·Granted Jan 19, 2021·0 cites·15 claims
- 4058US2019198663A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 4158US2019237577A1Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 4257US9614055B2Semiconductor device and method for fabricating the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Apr 4, 2017·0 cites·8 claims
- 4357US9543395B2Normally-off power JFET and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2014·Granted Jan 10, 2017·0 cites·8 claims
- 4456US2025133769A1Three-dimensional (3d) trenched metal-oxide-semiconductor field-effect transistor (mosfet) device and method for fabricating the sameTAIPEI ANJET CORP·Filed 2023·Application pending·0 cites
- 4555US12482729B2Semiconductor deviceTAMURA SEISAKUSHO KK·Filed 2020·Granted Nov 25, 2025·0 cites·13 claims
- 4655US2012289013A1Semiconductor device and method for fabricating the sameINAGAWA HIROSHI·Filed 2012·Application pending·0 cites
- 4755US2008233696A1Semiconductor device and method for fabricating the sameINAGAWA HIROSHI·Filed 2008·Application pending·0 cites
- 4853US9041049B2Power JFETRENESAS ELECTRONICS CORP·Filed 2013·Granted May 26, 2015·0 cites·3 claims
- 4949US2023030874A1Semiconductor element, method for manufacturing semiconductor element, semiconductor device, and method for manufacturing semiconductor deviceTAMURA SEISAKUSHO KK·Filed 2020·Application pending·0 cites
- 5046US2020161445A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2019·Application pending·0 cites
Showing the top 50 of 53 patent records by PatentIndex Score.
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