Inventor · disambiguated record
Jean-François Nodin
Also filed as: NODIN JEAN-FRANCOIS · NODIN JEAN-FRANÇOIS
13 granted patents·4 pending applications·22 citations·filing 2009–2024
86Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE10COMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES1COMMISSARIAT Á L ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES1CYRILLE MARIE-CLAIRE1DELAET BERTRAND1
Top patents by PatentIndex Score
17 records- 0175US8759808B2Phase-change memory cellSTMICROELETRONICS CROLLES 2 SAS·Filed 2013·Granted Jun 24, 2014·7 cites·12 claims
- 0270US8958234B2Selector type electronic device functioning by ionic conductionNODIN JEAN-FRANÇOIS·Filed 2012·Granted Feb 17, 2015·6 cites·9 claims
- 0365US8098105B2Spin-valve or tunnel-junction radio-frequency oscillatorCYRILLE MARIE-CLAIRE·Filed 2009·Granted Jan 17, 2012·4 cites·12 claims
- 0464US10741757B2Process for the manufacture of a recurrent neural network calculatorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Aug 11, 2020·1 cites·12 claims
- 0561US11393876B2Three dimensional resistive random access memory and method enabling such a memory to be obtainedCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Jul 19, 2022·2 cites·9 claims
- 0660US12414485B2Method for manufacturing an OxRAM-type resistive memory cell and associated OxRAM-type memory cellCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Granted Sep 9, 2025·0 cites·15 claims
- 0756US12170109B2Hybrid resistive memoryCOMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2021·Granted Dec 17, 2024·0 cites·11 claims
- 0850US2025107103A1Assembly comprising at least two non-volatile resistive memories and a selector, array and manufacturing methods associated therewithCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 0946US2025072303A1Assembly comprising at least two selectors and two non-volatile resistive memories, array and manufacturing method associated therewithCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 1046US2025072302A1Assembly comprising at least two non-volatile resistive memories and two selectors, array and manufacturing method associated therewithCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 1145US9018614B2Phase-change memory cellST MICROELECTRONICS CROLLES 2·Filed 2013·Granted Apr 28, 2015·0 cites·18 claims
- 1245US8148709B2Magnetic device with integrated magneto-resistive stackDELAET BERTRAND·Filed 2009·Granted Apr 3, 2012·2 cites·12 claims
- 1344US12349609B2Low forming voltage OxRAM memory cell, and associated method of manufactureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Jul 1, 2025·0 cites·8 claims
- 1442US12349605B2Method for manufacturing an OxRAM type resistive memory cellCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Jul 1, 2025·0 cites·17 claims
- 1542US12224007B2Method for determining a manufacturing parameter of a resistive random access memory cellCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Feb 11, 2025·0 cites·10 claims
- 1642US2010097735A1Method of protecting and dissipating electrostatic discharges in an integrated circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2009·Application pending·0 cites
- 1741US9209391B2Electronic memory device having an electrode made of a soluble materialCommissariat à l'énergie atomique et aux énergies alternatives·Filed 2013·Granted Dec 8, 2015·0 cites·13 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →