Inventor · disambiguated record
Baek Mann Kim
Also filed as: KIM BAEK-MANN
27 granted patents·7 pending applications·68 citations·filing 2006–2011
95Inventor score
Top patents by PatentIndex Score
34 records- 0186US8445369B2Method for fabricating semiconductor deviceKIM BAEK-MANN·Filed 2011·Granted May 21, 2013·7 cites·9 claims
- 0285US8053341B2Method for fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2010·Granted Nov 8, 2011·6 cites·8 claims
- 0382US7741216B2Metal line of semiconductor device and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jun 22, 2010·10 cites·30 claims
- 0478US7541269B2Method of forming tungsten polymetal gate having low resistanceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jun 2, 2009·8 cites·21 claims
- 0577US7872351B2Multi-layered metal line of semiconductor device for preventing diffusion between metal lines and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Jan 18, 2011·6 cites·11 claims
- 0675US8338951B2Metal line of semiconductor device having a diffusion barrier with an amorphous TaBN layer and method for forming the sameJUNG DONG HA·Filed 2011·Granted Dec 25, 2012·3 cites·6 claims
- 0771US8043962B2Metal wire for a semiconductor device formed with a metal layer without voids therein and a method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Oct 25, 2011·4 cites·10 claims
- 0871US7629248B2Multi-layered metal line of semiconductor device for preventing diffusion between metal lines and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Dec 8, 2009·4 cites·14 claims
- 0969US7855456B2Metal line of semiconductor device without production of high resistance compound due to metal diffusion and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Dec 21, 2010·2 cites·10 claims
- 1068US7977793B2Metal line of semiconductor device having a diffusion barrier with an amorphous TaBN layer and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jul 12, 2011·3 cites·11 claims
- 1167US8431981B2Semiconductor memory device having vertical transistor and buried bit line and method for fabricating the sameKIM BAEK MANN·Filed 2011·Granted Apr 30, 2013·2 cites·10 claims
- 1266US8278218B2Electrical conductor line having a multilayer diffusion barrier for use in a semiconductor device and method for forming the sameOH JOON SEOK·Filed 2011·Granted Oct 2, 2012·2 cites·14 claims
- 1364US7820546B2Method for manufacturing semiconductor device preventing loss of junction regionHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Oct 26, 2010·2 cites·20 claims
- 1463US7902065B2Multi-layered metal line having an improved diffusion barrier of a semiconductor device and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 8, 2011·2 cites·6 claims
- 1563US7875978B2Metal line having a multi-layered diffusion layer in a semiconductor device and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Jan 25, 2011·2 cites·19 claims
- 1663US7777336B2Metal line of semiconductor device and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Aug 17, 2010·2 cites·23 claims
- 1763US7531902B2Multi-layered metal line of semiconductor device having excellent diffusion barrier and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted May 12, 2009·2 cites·27 claims
- 1862US8519539B2Metal wire for a semiconductor device formed with a metal layer without voids therein and a method for forming the sameJUNG DONG HA·Filed 2011·Granted Aug 27, 2013·1 cites·6 claims
- 1959US7875979B2Metal line of semiconductor device having a diffusion barrier including CRxBy and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Jan 25, 2011·0 cites·6 claims
- 2056US7638425B2Metal line of semiconductor device having a diffusion barrier including CRxBy and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Dec 29, 2009·0 cites·11 claims
- 2154US2009200672A1Method for manufacturing semiconductor deviceKIM SOO HYUN·Filed 2009·Application pending·0 cites
- 2251US8426269B2Method for fabricating semiconductor deviceKIM BAEK-MANN·Filed 2011·Granted Apr 23, 2013·0 cites·15 claims
- 2351US8053895B2Metal line of semiconductor device having a multilayer molybdenum diffusion barrier and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Nov 8, 2011·0 cites·14 claims
- 2451US2008157367A1Multi-layer metal wiring of semiconductor device preventing mutual metal diffusion between metal wirings and method for forming the sameKIM SOO HYUN·Filed 2007·Application pending·0 cites
- 2550US8008708B2Metal line of semiconductor device having a diffusion barrier and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Aug 30, 2011·0 cites·20 claims
- 2650US8008774B2Multi-layer metal wiring of semiconductor device preventing mutual metal diffusion between metal wirings and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2010·Granted Aug 30, 2011·0 cites·14 claims
- 2749US2007148943A1Method for manufacturing semiconductor deviceKIM SOO HYUN·Filed 2006·Application pending·0 cites
- 2848US8159069B2Metal line of semiconductor device without production of high resistance compound due to metal diffusion and method for forming the sameKIM BAEK MANN·Filed 2010·Granted Apr 17, 2012·0 cites·20 claims
- 2946US2009017619A1Method for manufacturing metal silicide layer in a semiconductor deviceLEE YOUNG JIN·Filed 2008·Application pending·0 cites
- 3045US8080472B2Metal line having a MoxSiy/Mo diffusion barrier of semiconductor device and method for forming the sameOH JOON SEOK·Filed 2009·Granted Dec 20, 2011·0 cites·15 claims
- 3145US7524761B2Method for manufacturing semiconductor device capable of reducing parasitic bit line capacitanceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Apr 28, 2009·0 cites·18 claims
- 3244US2009001577A1Metal line of semiconductor device with a triple layer diffusion barrier and method for forming the sameKIM JEONG TAE·Filed 2007·Application pending·0 cites
- 3344US2010164118A1Method for fabricating semiconductor device including metal contactKIM BAEK-MANN·Filed 2009·Application pending·0 cites
- 3440US2009209096A1Method for manufacturing semiconductor device having decreased contact resistanceLEE NAM YEAL·Filed 2008·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →