Inventor · disambiguated record
Jeffrey Casady
Also filed as: CASADY JEFFREY · CASADY JEFFREY B · CASADY JEFFREY BLAINE
8 granted patents·227 citations·filing 2001–2012
88Inventor score
Top patents by PatentIndex Score
8 records- 0190US6767783B2Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantationMISSISSIPPI STATE UNIVERSITY R·Filed 2002·Granted Jul 27, 2004·89 cites·27 claims
- 0288US6503782B2Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductorsMISSISSIPPI STATE UNIVERSITY R·Filed 2001·Granted Jan 7, 2003·55 cites·20 claims
- 0382US7242040B2Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistorsSEMISOUTH LAB INC·Filed 2006·Granted Jul 10, 2007·9 cites·15 claims
- 0482US7009209B2Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applicationsMISSISSIPPI STATE UNIVERSITY R·Filed 2002·Granted Mar 7, 2006·32 cites·34 claims
- 0579US6410396B1Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transistor; a new semiconductor transistor for high-speed, high-power applicationsUNIV MISSISSIPPI·Filed 2001·Granted Jun 25, 2002·27 cites·1 claims
- 0671US7119380B2Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistorsSEMISOUTH LAB INC·Filed 2004·Granted Oct 10, 2006·14 cites·12 claims
- 0758US7432171B2Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applicationsMISSISSIPPI STATE UNIVERSITY R·Filed 2005·Granted Oct 7, 2008·1 cites·14 claims
- 0832US8884270B2Vertical junction field effect transistors with improved thermal characteristics and methods of makingCASADY JANNA·Filed 2012·Granted Nov 11, 2014·0 cites·27 claims
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