Inventor · disambiguated record
Ravi Iyer
Also filed as: IYER RAVI · IYER RAVI T
130 granted patents·2 pending applications·3,465 citations·filing 1993–2010
99Inventor score
Files withMICRON TECHNOLOGY INC125IYER RAVI1MICRON SEMICONDUCTOR INC1NEJAD HASAN1RAMASWAMY D V NIRMAL1
Top patents by PatentIndex Score
132 records- 0198US7268078B2Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactantsMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 11, 2007·50 cites·26 claims
- 0298US5872052APlanarization using plasma oxidized amorphous siliconMICRON TECHNOLOGY INC·Filed 1996·Granted Feb 16, 1999·336 cites·24 claims
- 0398US5733816AMethod for depositing a tungsten layer on siliconMICRON TECHNOLOGY INC·Filed 1995·Granted Mar 31, 1998·356 cites·19 claims
- 0497US6039851AReactive sputter faceting of silicon dioxide to enhance gap fill of spaces between metal linesMICRON TECHNOLOGY INC·Filed 1998·Granted Mar 21, 2000·306 cites·12 claims
- 0596US7214621B2Methods of forming devices associated with semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2005·Granted May 8, 2007·79 cites·29 claims
- 0695US5735960AApparatus and method to increase gas residence time in a reactorMICRON TECHNOLOGY INC·Filed 1996·Granted Apr 7, 1998·119 cites·30 claims
- 0794US6809025B2Method of making a void-free aluminum filmMICRON TECHNOLOGY INC·Filed 2003·Granted Oct 26, 2004·63 cites·16 claims
- 0894US6333556B1Insulating materialsMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 25, 2001·65 cites·4 claims
- 0994US5643048AEndpoint regulator and method for regulating a change in wafer thickness in chemical-mechanical planarization of semiconductor wafersMICRON TECHNOLOGY INC·Filed 1996·Granted Jul 1, 1997·129 cites·31 claims
- 1093US5847463ALocal interconnect comprising titanium nitride barrier layerMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 8, 1998·115 cites·22 claims
- 1191US6313046B1Method of forming materials between conductive electrical components, and insulating materialsMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 6, 2001·50 cites·4 claims
- 1290US7659560B2Transistor structuresMICRON TECHNOLOGY INC·Filed 2007·Granted Feb 9, 2010·15 cites·22 claims
- 1389US6144098ATechniques for improving adhesion of silicon dioxide to titaniumMICRON TECHNOLOGY INC·Filed 1996·Granted Nov 7, 2000·75 cites·4 claims
- 1488US6555471B2Method of making a void-free aluminum filmMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 29, 2003·34 cites·19 claims
- 1588US6297175B1Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layersMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 2, 2001·24 cites·18 claims
- 1687US6281100B1Semiconductor processing methodsMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 28, 2001·62 cites·19 claims
- 1787US6121133AIsolation using an antireflective coatingMICRON TECHNOLOGY INC·Filed 1997·Granted Sep 19, 2000·57 cites·7 claims
- 1886US6156630ATitanium boride gate electrode and interconnect and methods regarding sameMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 5, 2000·45 cites·31 claims
- 1986US5736455AMethod for passivating the sidewalls of a tungsten word lineMICRON TECHNOLOGY INC·Filed 1995·Granted Apr 7, 1998·69 cites·27 claims
- 2085US8089128B2Transistor gate forming methods and integrated circuitsRAMASWAMY D V NIRMAL·Filed 2009·Granted Jan 3, 2012·10 cites·15 claims
- 2185US6383723B1Method to clean substrate and improve photoresist profileMICRON TECHNOLOGY INC·Filed 1998·Granted May 7, 2002·75 cites·43 claims
- 2285US5981380AMethod of forming a local interconnect including selectively etched conductive layers and recess formationMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 9, 1999·60 cites·65 claims
- 2385US5910684AIntegrated circuitryMICRON TECHNOLOGY INC·Filed 1996·Granted Jun 8, 1999·64 cites·1 claims
- 2484US7545009B2Word lines for memory cellsMICRON TECHNOLOGY INC·Filed 2005·Granted Jun 9, 2009·6 cites·28 claims
- 2584US7112542B2Methods of forming materials between conductive electrical components, and insulating materialsMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 26, 2006·18 cites·15 claims
- 2682US5946594AChemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactantsMICRON TECHNOLOGY INC·Filed 1996·Granted Aug 31, 1999·42 cites·28 claims
- 2781US6688584B2Compound structure for reduced contact resistanceMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 10, 2004·17 cites·88 claims
- 2881US6544876B1Titanium boride gate electrode and interconnect and methods regarding sameMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 8, 2003·19 cites·11 claims
- 2981US6495450B1Isolation using an antireflective coatingMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 17, 2002·17 cites·39 claims
- 3081US6455394B1Method for trench isolation by selective deposition of low temperature oxide filmsMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 24, 2002·55 cites·27 claims
- 3180US6541830B1Titanium boride gate electrode and interconnectMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 1, 2003·17 cites·11 claims
- 3280US6461950B2Semiconductor processing methods, semiconductor circuitry, and gate stacksMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 8, 2002·16 cites·19 claims
- 3380US6174590B1Isolation using an antireflective coatingMICRON TECHNOLOGY INC·Filed 1998·Granted Jan 16, 2001·37 cites·18 claims
- 3479US6458721B2Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layersMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 1, 2002·12 cites·18 claims
- 3579US5844318AAluminum film for semiconductive devicesMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 1, 1998·39 cites·21 claims
- 3678US7763327B2Methods using ozone for CVD deposited filmsMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 27, 2010·2 cites·30 claims
- 3778US7557032B2Silicided recessed siliconMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 7, 2009·6 cites·12 claims
- 3878US6977225B2Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactantsMICRON TECHNOLOGY INC·Filed 2003·Granted Dec 20, 2005·12 cites·72 claims
- 3978US6423631B1Isolation using an antireflective coatingMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 23, 2002·14 cites·47 claims
- 4078US6340637B2Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactantsMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 22, 2002·13 cites·28 claims
- 4177US6501179B2Constructions comprising insulative materialsMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 31, 2002·12 cites·6 claims
- 4277US5935336AApparatus to increase gas residence time in a reactorMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 10, 1999·30 cites·22 claims
- 4376US7977236B2Method of forming a transistor gate of a recessed access device, method of forming a recessed transistor gate and a non-recessed transistor gate, and method of fabricating an integrated circuitMICRON TECHNOLOGY INC·Filed 2009·Granted Jul 12, 2011·5 cites·16 claims
- 4476US5917213ADepletion compensated polysilicon electrodesMICRON TECHNOLOGY INC·Filed 1997·Granted Jun 29, 1999·34 cites·8 claims
- 4575US5997639AMethod of reducing carbon incorporation into films produced by chemical vapor deposition involving organometallic precursor compoundsMICRON TECHNOLOGY INC·Filed 1998·Granted Dec 7, 1999·26 cites·13 claims
- 4674US5985770AMethod of depositing silicon oxidesMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 16, 1999·39 cites·11 claims
- 4774US5856236AMethod of depositing a smooth conformal aluminum film on a refractory metal nitride layerMICRON TECHNOLOGY INC·Filed 1996·Granted Jan 5, 1999·38 cites·13 claims
- 4873US6605502B2Isolation using an antireflective coatingMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 12, 2003·10 cites·27 claims
- 4973US5824365AMethod of inhibiting deposition of material on an internal wall of a chemical vapor deposition reactorMICRON TECHNOLOGY INC·Filed 1996·Granted Oct 20, 1998·33 cites·2 claims
- 5072US7538001B2Transistor gate forming methods and integrated circuitsMICRON TECHNOLOGY INC·Filed 2005·Granted May 26, 2009·4 cites·33 claims
Showing the top 50 of 132 patent records by PatentIndex Score.
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