Inventor · disambiguated record
Akihiko Osawa
Also filed as: OSAWA AKIHIKO
21 granted patents·5 pending applications·1,059 citations·filing 1989–2016
97Inventor score
Top patents by PatentIndex Score
26 records- 0197US5126807AVertical MOS transistor and its production methodTOSHIBA KK·Filed 1991·Granted Jun 30, 1992·193 cites·7 claims
- 0294US6740931B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted May 25, 2004·95 cites·44 claims
- 0394US5242845AMethod of production of vertical MOS transistorTOSHIBA KK·Filed 1992·Granted Sep 7, 1993·121 cites·10 claims
- 0492US6501129B2Semiconductor deviceTOSHIBA KK·Filed 2001·Granted Dec 31, 2002·52 cites·10 claims
- 0592US5578508AVertical power MOSFET and process of fabricating the sameTOSHIBA KK·Filed 1995·Granted Nov 26, 1996·135 cites·9 claims
- 0690US6239464B1Semiconductor gate trench with covered open endsTOSHIBA KK·Filed 1999·Granted May 29, 2001·86 cites·3 claims
- 0790US6060747ASemiconductor deviceTOSHIBA KK·Filed 1998·Granted May 9, 2000·80 cites·17 claims
- 0883US6995426B2Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity typeTOSHIBA KK·Filed 2002·Granted Feb 7, 2006·27 cites·16 claims
- 0983US6627499B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Sep 30, 2003·24 cites·5 claims
- 1072US5250446AMethod of manufacturing a semiconductor device by forming at least three regions of different lifetimes of carriers at different depthsTOSHIBA KK·Filed 1992·Granted Oct 5, 1993·48 cites·4 claims
- 1166US5084408AMethod of making complete dielectric isolation structure in semiconductor integrated circuitTOSHIBA KK·Filed 1990·Granted Jan 28, 1992·36 cites·8 claims
- 1263US5243205ASemiconductor device with overvoltage protective functionTOSHIBA KK·Filed 1992·Granted Sep 7, 1993·35 cites·26 claims
- 1362US5126817ADielectrically isolated structure for use in soi-type semiconductor deviceTOSHIBA KK·Filed 1990·Granted Jun 30, 1992·33 cites·7 claims
- 1460US5731637ASemiconductor deviceTOSHIBA KK·Filed 1996·Granted Mar 24, 1998·27 cites·4 claims
- 1555US5554872ASemiconductor device and method of increasing device breakdown voltage of semiconductor deviceTOSHIBA KK·Filed 1995·Granted Sep 10, 1996·20 cites·19 claims
- 1651US2014283748A1Semiconductor manufacturing apparatus and semiconductor wafer holderTOSHIBA KK·Filed 2013·Application pending·0 cites
- 1749US4984052ABonded substrate of semiconductor elements having a high withstand voltageTOSHIBA KK·Filed 1989·Granted Jan 8, 1991·15 cites·6 claims
- 1848US2017044686A1Semiconductor manufacturing apparatus and semiconductor wafer holderTOSHIBA KK·Filed 2016·Application pending·0 cites
- 1944US7227223B2Power MOS transistor having trench gateTOSHIBA KK·Filed 2003·Granted Jun 5, 2007·3 cites·18 claims
- 2044US6010950AMethod of manufacturing semiconductor bonded substrateTOSHIBA KK·Filed 1998·Granted Jan 4, 2000·10 cites·1 claims
- 2143US2006145290A1Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity typeOKUMURA HIDEKI·Filed 2005·Application pending·0 cites
- 2240US5029324ASemiconductor device having a semiconductive protection layerTOSHIBA KK·Filed 1990·Granted Jul 2, 1991·10 cites·6 claims
- 2338US6031276ASemiconductor device and method of manufacturing the same with stable control of lifetime carriersTOSHIBA KK·Filed 1997·Granted Feb 29, 2000·7 cites·5 claims
- 2438US2004016962A1Semiconductor deviceFiled 2003·Application pending·0 cites
- 2537US2002130359A1Semiconductor device and method of manufacturing the sameFiled 2002·Application pending·0 cites
- 2631US6084263APower device having high breakdown voltage and method of manufacturing the sameTOSHIBA KK·Filed 1998·Granted Jul 4, 2000·2 cites·7 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →