Inventor · disambiguated record
Hiroshi Shinriki
Also filed as: SHINRIKI HIROSHI
48 granted patents·20 pending applications·3,321 citations·filing 1986–2009
99Inventor score
Top patents by PatentIndex Score
68 records- 0197US8084104B2Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer depositionSHINRIKI HIROSHI·Filed 2008·Granted Dec 27, 2011·464 cites·15 claims
- 0297US7408225B2Apparatus and method for forming thin film using upstream and downstream exhaust mechanismsASM JAPAN·Filed 2004·Granted Aug 5, 2008·406 cites·29 claims
- 0397US6800139B1Film deposition apparatus and methodTOKYO ELECTRON LTD·Filed 2000·Granted Oct 5, 2004·146 cites·2 claims
- 0497US6756235B1Metal oxide film formation method and apparatusTOKYO ELECTRON LTD·Filed 2000·Granted Jun 29, 2004·219 cites·25 claims
- 0596US7273526B2Thin-film deposition apparatusASM JAPAN·Filed 2004·Granted Sep 25, 2007·90 cites·31 claims
- 0695US7435484B2Ruthenium thin film-formed structureASM JAPAN·Filed 2006·Granted Oct 14, 2008·27 cites·11 claims
- 0795US6806211B2Device and method for processing substrateTOKYO ELECTRON LTD·Filed 2001·Granted Oct 19, 2004·108 cites·67 claims
- 0895US6143081AFilm forming apparatus and method, and film modifying apparatus and methodTOKYO ELECTRON LTD·Filed 1997·Granted Nov 7, 2000·186 cites·38 claims
- 0995US6126753ASingle-substrate-processing CVD apparatus and methodTOKYO ELECTRON LTD·Filed 1999·Granted Oct 3, 2000·180 cites·9 claims
- 1095US4891684ASemiconductor deviceHITACHI LTD·Filed 1987·Granted Jan 2, 1990·84 cites·39 claims
- 1194US7655564B2Method for forming Ta-Ru liner layer for Cu wiringASM JAPAN·Filed 2007·Granted Feb 2, 2010·36 cites·16 claims
- 1294US6428850B1Single-substrate-processing CVD method of forming film containing metal elementTOKYO ELECTRON LTD·Filed 2000·Granted Aug 6, 2002·71 cites·9 claims
- 1394US5336638AProcess for manufacturing semiconductor devicesHITACHI LTD·Filed 1992·Granted Aug 9, 1994·129 cites·29 claims
- 1493US6467491B1Processing apparatus and processing methodTOKYO ELECTRON LTD·Filed 2000·Granted Oct 22, 2002·97 cites·7 claims
- 1592US6001729AMethod of forming wiring structure for semiconductor deviceKAWASAKI STEEL CO·Filed 1998·Granted Dec 14, 1999·104 cites·36 claims
- 1691US5292673AMethod of manufacturing a semiconductor deviceHITACHI LTD·Filed 1992·Granted Mar 8, 1994·99 cites·42 claims
- 1790US6482266B1Metal organic chemical vapor deposition method and apparatusTOKYO ELECTRON LIMTED·Filed 2000·Granted Nov 19, 2002·43 cites·20 claims
- 1890US6232248B1Single-substrate-heat-processing method for performing reformation and crystallizationTOKYO ELECTRON LTD·Filed 1999·Granted May 15, 2001·84 cites·20 claims
- 1990US5627102AMethod for making metal interconnection with chlorine plasma etchKAWASAKI STEEL CO·Filed 1995·Granted May 6, 1997·89 cites·23 claims
- 2086US7129185B2Substrate processing method and a computer readable storage medium storing a program for controlling sameTOKYO ELECTRON LTD·Filed 2004·Granted Oct 31, 2006·36 cites·17 claims
- 2186US6927112B2Radical processing of a sub-nanometer insulation filmTOKYO ELECTRON LTD·Filed 2002·Granted Aug 9, 2005·27 cites·47 claims
- 2284US5834846ASemiconductor device with contact structure and method of manufacturing the sameKAWASAKI STEEL CO·Filed 1995·Granted Nov 10, 1998·61 cites·69 claims
- 2382US7037560B1Film forming method, and film modifying methodTOKYO ELECTRON LTD·Filed 2000·Granted May 2, 2006·26 cites·21 claims
- 2481US7799674B2Ruthenium alloy film for copper interconnectsASM JAPAN·Filed 2008·Granted Sep 21, 2010·9 cites·23 claims
- 2581US7785658B2Method for forming metal wiring structureASM JAPAN·Filed 2006·Granted Aug 31, 2010·7 cites·28 claims
- 2681US7354622B2Method for forming thin film and apparatus for forming thin filmTOKYO ELECTRON LTD·Filed 2001·Granted Apr 8, 2008·21 cites·6 claims
- 2780US6063703AMethod for making metal interconnectionKAWASAKI STEEL CO·Filed 1998·Granted May 16, 2000·49 cites·54 claims
- 2880US5973402AMetal interconnection and method for makingKAWASAKI STEEL CO·Filed 1997·Granted Oct 26, 1999·48 cites·20 claims
- 2979US6485564B1Thin film forming methodTOKYO ELECTRON LTD·Filed 2000·Granted Nov 26, 2002·24 cites·18 claims
- 3077US8133555B2Method for forming metal film by ALD using beta-diketone metal complexSHINRIKI HIROSHI·Filed 2008·Granted Mar 13, 2012·3 cites·16 claims
- 3177US4937650ASemiconductor capacitor device with dual dielectricHITACHI LTD·Filed 1988·Granted Jun 26, 1990·39 cites·18 claims
- 3276US5079191AProcess for producing a semiconductor deviceHITACHI LTD·Filed 1990·Granted Jan 7, 1992·39 cites·17 claims
- 3375US6866890B2Method of forming a dielectric filmTOKYO ELECTRON LTD·Filed 2001·Granted Mar 15, 2005·18 cites·30 claims
- 3474US7481902B2Substrate processing apparatus and method, high speed rotary valve and cleaning methodTOKYO ELECTRON LTD·Filed 2004·Granted Jan 27, 2009·16 cites·2 claims
- 3573US7497964B2Plasma igniting method and substrate processing methodTOKYO ELECTRON LTD·Filed 2006·Granted Mar 3, 2009·4 cites·6 claims
- 3671US6953731B2Fabrication process of a semiconductor deviceTOKYO ELECTRON LTD·Filed 2003·Granted Oct 11, 2005·14 cites·11 claims
- 3771US5521423ADielectric structure for anti-fuse programming elementKAWASAKI STEEL CO·Filed 1994·Granted May 28, 1996·45 cites·15 claims
- 3870US7383841B2Method of cleaning substrate-processing device and substrate-processing deviceTOKYO ELECTRON LTD·Filed 2003·Granted Jun 10, 2008·10 cites·22 claims
- 3970US5565702AAntifuse element, semiconductor device having antifuse elements, and method for manufacturing the sameKAWASAKI STEEL CO·Filed 1994·Granted Oct 15, 1996·41 cites·17 claims
- 4066US5652180AMethod of manufacturing semiconductor device with contact structureKAWASAKI STEEL CO·Filed 1994·Granted Jul 29, 1997·35 cites·25 claims
- 4166US5641985AAntifuse element and semiconductor device having antifuse elementsKAWASAKI STEEL CO·Filed 1994·Granted Jun 24, 1997·35 cites·13 claims
- 4262US7125799B2Method and device for processing substrate, and apparatus for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2002·Granted Oct 24, 2006·8 cites·18 claims
- 4361US6866882B1Method of forming a thin filmTOKYO ELECTRON LTD·Filed 2000·Granted Mar 15, 2005·6 cites·10 claims
- 4458US7105362B2Method of forming dielectric filmTOKYO ELECTRON LTD·Filed 2003·Granted Sep 12, 2006·6 cites·20 claims
- 4555US2008139000A1Radical Processing of a Sub-Nanometer Insulation FilmTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 4655US2009133627A1Substrate processing apparatus and method, and gas nozzle for improving purge efficiencyTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 4755US2008318417A1Method of forming ruthenium film for metal wiring structureASM JAPAN·Filed 2008·Application pending·0 cites
- 4854US2007264427A1Thin film formation by atomic layer growth and chemical vapor depositionASM JAPAN·Filed 2006·Application pending·0 cites
- 4953US2008134976A1Apparatus for Forming Thin FilmTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 5052US5679974AAntifuse element and semiconductor device having antifuse elementsKAWASAKI STEEL CO·Filed 1994·Granted Oct 21, 1997·20 cites·22 claims
Showing the top 50 of 68 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →