Inventor · disambiguated record
Dong-Ho Ahn
Also filed as: AHN DONG H · AHN DONG-HO
51 granted patents·13 pending applications·866 citations·filing 1985–2023
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD39HYUNDAI MOBIS CO LTD5AHN DONG-HO2AN HYEONG-GEUN2CLIPSBNC CO LTD2
Top patents by PatentIndex Score
64 records- 0195US6918570B2Anti-lock brake equipment solenoid valveHYUNDAI MOBIS CO LTD·Filed 2002·Granted Jul 19, 2005·45 cites·4 claims
- 0295US6596607B2Method of forming a trench type isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 22, 2003·111 cites·15 claims
- 0394US7800095B2Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memorySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 21, 2010·35 cites·20 claims
- 0493US10186552B2Variable resistance memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 22, 2019·11 cites·20 claims
- 0593US7558100B2Phase change memory devices including memory cells having different phase change materials and related methods and systemsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 7, 2009·31 cites·54 claims
- 0692US6461937B1Methods of forming trench isolation regions having recess-inhibiting layers therein that protect against overetchingSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 8, 2002·78 cites·7 claims
- 0791US7767568B2Phase change memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 3, 2010·17 cites·11 claims
- 0890US6383877B1Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 7, 2002·49 cites·10 claims
- 0989US6717231B2Trench isolation regions having recess-inhibiting layers therein that protect against overetchingSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 6, 2004·52 cites·6 claims
- 1087US7112849B2Method of preventing semiconductor layers from bending and semiconductor device formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 26, 2006·10 cites·8 claims
- 1187US6699799B2Method of forming a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 2, 2004·36 cites·15 claims
- 1287US6482715B2Method of forming shallow trench isolation layer in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 19, 2002·48 cites·24 claims
- 1386US7824954B2Methods of forming phase change memory devices having bottom electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 2, 2010·21 cites·36 claims
- 1484US10403681B2Memory device including a variable resistance material layerSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 3, 2019·6 cites·20 claims
- 1584US6624496B2Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 23, 2003·29 cites·6 claims
- 1683US10128312B2Non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 13, 2018·4 cites·20 claims
- 1783US8426840B2Nonvolatile memory cells having phase changeable patterns therein for data storageAN HYEONG-GEUN·Filed 2010·Granted Apr 23, 2013·12 cites·10 claims
- 1883US6644621B2Anti-lock brake system solenoid valveHYUNDAI MOBIS CO LTD·Filed 2002·Granted Nov 11, 2003·24 cites·6 claims
- 1982US9543513B2Variable resistance material layers and variable resistance memory devices including the sameKIM DO-HYUNG·Filed 2015·Granted Jan 10, 2017·3 cites·19 claims
- 2081US8299450B2Non-volatile memory device including phase-change materialAHN DONG-HO·Filed 2010·Granted Oct 30, 2012·8 cites·16 claims
- 2179US6342451B1Method of fabricating floating gates in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 29, 2002·20 cites·20 claims
- 2278US10224371B2Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 5, 2019·2 cites·17 claims
- 2378US9318700B2Method of manufacturing a phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 19, 2016·3 cites·20 claims
- 2478US6840499B2Solenoid controlled valve of anti-lock brake systemHYUNDAI MOBIS CO LTD·Filed 2002·Granted Jan 11, 2005·15 cites·2 claims
- 2576US10236444B2Variable resistance memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 19, 2019·2 cites·18 claims
- 2675US12506159B2Fuel cell stackHYUNDAI MOTOR CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·12 claims
- 2775US10388867B2Variable resistance memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 20, 2019·2 cites·16 claims
- 2874US8187918B2Methods of forming multi-level cell of semiconductor memoryOH GYU-HWAN·Filed 2009·Granted May 29, 2012·5 cites·11 claims
- 2974US8039297B2Plasma treating methods of fabricating phase change memory devices, and memory devices so fabricatedSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·6 cites·13 claims
- 3074US6159823ATrench isolation method of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 12, 2000·56 cites·17 claims
- 3172US6881645B2Method of preventing semiconductor layers from bending and semiconductor device formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 19, 2005·13 cites·9 claims
- 3270US6988707B2Anti-lock brake equipment solenoid valveHYUNDAI MOBIS CO LTD·Filed 2002·Granted Jan 24, 2006·10 cites·17 claims
- 3366US10017743B2MDCK-derived cell strain suspension-cultured in protein-free medium and method for proliferating virus using cell strainMOGAM BIOTECHNOLOGY INST·Filed 2014·Granted Jul 10, 2018·1 cites·5 claims
- 3465US7638788B2Phase change memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 29, 2009·2 cites·27 claims
- 3565US5804491ACombined field/trench isolation region fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Sep 8, 1998·30 cites·21 claims
- 3661US8222625B2Non-volatile memory device including phase-change materialAHN DONG-HO·Filed 2010·Granted Jul 17, 2012·1 cites·4 claims
- 3761US4769094AAmorphous-nickel-base alloy electrical resistorsSAMSUNG ELECTRONICS CO LTD·Filed 1985·Granted Sep 6, 1988·13 cites·7 claims
- 3860US2024165216A1Novel recombinant strain of mycobacterium smegmatis and use of sameCLIPSBNC CO LTD·Filed 2022·Application pending·0 cites
- 3959US10403818B2Method of forming semiconductor devices having threshold switching devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 3, 2019·1 cites·9 claims
- 4059US2017084834A1Variable resistance material layers and variable resistance memory devices including the sameKIM DO-HYUNG·Filed 2016·Application pending·0 cites
- 4157US10636968B2Variable resistance memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 28, 2020·0 cites·20 claims
- 4256US10546894B2Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 28, 2020·0 cites·18 claims
- 4356US6971858B2Anti-lock brake system pump housingHYUNDAI MOBIS CO LTD·Filed 2002·Granted Dec 6, 2005·4 cites·2 claims
- 4455US5926721AIsolation method for semiconductor device using selective epitaxial growthSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 20, 1999·19 cites·18 claims
- 4554US2023310543A1Novel composition for prevention or treatment of staphylococcus aureus infectious diseaseCLIPSBNC CO LTD·Filed 2021·Application pending·0 cites
- 4652US7759668B2Memory device including phase-changeable material region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·3 cites·14 claims
- 4750US8021977B2Methods of forming contact structures and semiconductor devices fabricated using contact structuresSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·0 cites·20 claims
- 4849US4740250AAluminium base-alloy for head drum of video cassette recordersSAMSUNG ELECTRONICS CO LTD·Filed 1985·Granted Apr 26, 1988·8 cites·13 claims
- 4948US10714685B2Methods of forming semiconductor devices having threshold switching devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 14, 2020·0 cites·20 claims
- 5047US2006183296A1Isolation method for semiconductor deviceYOO JAE-YOON·Filed 2006·Application pending·0 cites
Showing the top 50 of 64 patent records by PatentIndex Score.
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