Inventor · disambiguated record
Motoharu Miyashita
Also filed as: MIYASHITA MOTOHARU
20 granted patents·3 pending applications·197 citations·filing 1992–2019
95Inventor score
Files withMITSUBISHI ELECTRIC CORP23
Top patents by PatentIndex Score
23 records- 0176US5439723ASubstrate for producing semiconductor waferMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Aug 8, 1995·28 cites·8 claims
- 0272US12308607B2Semiconductor laser element, method for manufacturing same, and semiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 2019·Granted May 20, 2025·1 cites·15 claims
- 0372US12176675B2Semiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Dec 24, 2024·1 cites·18 claims
- 0472US7260132B2Semiconductor laser apparatusMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Aug 21, 2007·2 cites·14 claims
- 0570US5279077AMethod for producing semiconductor waferMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jan 18, 1994·17 cites·5 claims
- 0667US7602830B2Monolithic semiconductor laser and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Oct 13, 2009·2 cites·9 claims
- 0764US5675601ASemiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Oct 7, 1997·27 cites·26 claims
- 0861US5835516ASemiconductor laser device and method of fabricating semiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 10, 1998·24 cites·28 claims
- 0957US5882952ASemiconductor device including quantum wells or quantum wires and method of making semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 16, 1999·21 cites·7 claims
- 1047US5436196AMethod of producing semiconductor laserMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jul 25, 1995·11 cites·15 claims
- 1145US6333946B1Semiconductor laser device and process for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 25, 2001·12 cites·9 claims
- 1243US2008130697A1Semiconductor laserMITSUBISHI ELECTRIC CORP·Filed 2007·Application pending·0 cites
- 1343US2005069005A1Monolithic semiconductor laser and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2004·Application pending·0 cites
- 1442US6414977B1Semiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 2, 2002·2 cites·4 claims
- 1540US5903587AStress compensation type semiconductor laserMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 11, 1999·9 cites·8 claims
- 1638US5822350ASemiconductor laserMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Oct 13, 1998·8 cites·16 claims
- 1738US5805628ASemiconductor laserMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 8, 1998·8 cites·11 claims
- 1837US2002196828A1Semiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 1936US5887011ASemiconductor laserMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 23, 1999·7 cites·4 claims
- 2036US5477325AMethod for evaluating epitaxial layers and test pattern for process evaluationMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Dec 19, 1995·9 cites·16 claims
- 2133US5673283ASemiconductor device and fabricating method thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 30, 1997·5 cites·5 claims
- 2231US6275515B1Semiconductor laser device and method of producing the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Aug 14, 2001·1 cites·16 claims
- 2331US5838704APulsation laser having an active region with a thicker central region in a resonator length directionMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 17, 1998·2 cites·7 claims
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