Inventor · disambiguated record
Yoshiji Horikoshi
Also filed as: HORIKOSHI YOSHIJI
7 granted patents·550 citations·filing 1975–1987
89Inventor score
Top patents by PatentIndex Score
7 records- 0196US4882609ASemiconductor devices with at least one monoatomic layer of doping atomsMAX PLANCK GESELLSCHAFT·Filed 1985·Granted Nov 21, 1989·180 cites·4 claims
- 0295US4767494APreparation process of compound semiconductorNIPPON TELEGRAPH & TELEPHONE·Filed 1986·Granted Aug 30, 1988·192 cites·26 claims
- 0387US4829022AMethod for forming thin films of compound semiconductors by flow rate modulation epitaxyNIPPON TELEGRAPH & TELEPHONE·Filed 1986·Granted May 9, 1989·97 cites·20 claims
- 0484US4775881ASemiconductor device for detecting electromagnetic radiation or particlesMAX PLANCK GESELLSCHAFT·Filed 1987·Granted Oct 4, 1988·54 cites·8 claims
- 0550US4028148AMethod of epitaxially growing a laminate semiconductor layer in liquid phaseNIPPON TELEGRAPH & TELEPHONE·Filed 1976·Granted Jun 7, 1977·12 cites·4 claims
- 0644US4013040AApparatus for epitaxially growing a laminate semiconductor layer in liquid phaseNIPPON TELEGRAPH & TELEPHONE·Filed 1975·Granted Mar 22, 1977·6 cites·8 claims
- 0739US4030949AMethod of effecting liquid phase epitaxial growth of group III-V semiconductorsNIPPON TELEGRAPH & TELEPHONE·Filed 1975·Granted Jun 21, 1977·9 cites·4 claims
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