Inventor · disambiguated record
Klaus Ploog
Also filed as: PLOOG KLAUS · PLOOG KLAUS H
16 granted patents·542 citations·filing 1982–2003
95Inventor score
Top patents by PatentIndex Score
16 records- 0196US4882609ASemiconductor devices with at least one monoatomic layer of doping atomsMAX PLANCK GESELLSCHAFT·Filed 1985·Granted Nov 21, 1989·180 cites·4 claims
- 0294US5373186ABipolar transistor with monoatomic base layer between emitter and collector layersMAX PLANCK GESELLSCHAFT·Filed 1994·Granted Dec 13, 1994·111 cites·1 claims
- 0384US4775881ASemiconductor device for detecting electromagnetic radiation or particlesMAX PLANCK GESELLSCHAFT·Filed 1987·Granted Oct 4, 1988·54 cites·8 claims
- 0463US5714765AMethod of fabricating a compositional semiconductor deviceMAX PLANCK GESELLSCHAFT·Filed 1994·Granted Feb 3, 1998·43 cites·29 claims
- 0561US5060234AInjection laser with at least one pair of monoatomic layers of doping atomsMAX PLANCK GESELLSCHAFT·Filed 1991·Granted Oct 22, 1991·17 cites·3 claims
- 0660US5385865AMethod of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surfaceMAX PLANCK GESELLSCHAFT·Filed 1991·Granted Jan 31, 1995·27 cites·17 claims
- 0759US5057881ALight emitting compositional semiconductor deviceMAX PLANCK GESELLSCHAFT·Filed 1989·Granted Oct 15, 1991·19 cites·13 claims
- 0856US5396089AMethod of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surfaceMAX PLANCK GESELLSCHAFT·Filed 1993·Granted Mar 7, 1995·15 cites·17 claims
- 0955US7652398B2Magnetic logic deviceFORSCHUNGSVERBUND BERLIN EV·Filed 2003·Granted Jan 26, 2010·10 cites·19 claims
- 1055US5329150ASemiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layersMAX PLANCK GESELLSCHAFT·Filed 1993·Granted Jul 12, 1994·13 cites·2 claims
- 1155US4740978AIntegrated quantum well lasers having uniform thickness lasing regions for wavelength multiplexingMAX PLANCK GESELLSCHAFT·Filed 1986·Granted Apr 26, 1988·13 cites·16 claims
- 1243US4755857AHeterostructure semiconductor deviceMAX PLANCK GESELLSCHAFT·Filed 1982·Granted Jul 5, 1988·8 cites·13 claims
- 1341US5216260AOptically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layersMAX PLANCK GESELLSCHAFT·Filed 1991·Granted Jun 1, 1993·8 cites·2 claims
- 1439US5148242AElectron-wave coupled semiconductor switching deviceMAX PLANCK GESELLSCHAFT·Filed 1991·Granted Sep 15, 1992·11 cites·29 claims
- 1535US4732648AMethod of preparing semiconductor substratesMAX PLANCK GESELLSCHAFT·Filed 1986·Granted Mar 22, 1988·10 cites·11 claims
- 1633US5338692AMethod of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surfaceMAX PLANCK GESELLSCHAFT·Filed 1993·Granted Aug 16, 1994·3 cites·35 claims
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