Inventor · disambiguated record
Yoshitaka Tsunashima
Also filed as: TSUNASHIMA YOSHITAKA
79 granted patents·10 pending applications·2,551 citations·filing 1984–2015
99Inventor score
Top patents by PatentIndex Score
89 records- 0198US6087719AChip for multi-chip semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1998·Granted Jul 11, 2000·296 cites·6 claims
- 0297US7235456B2Method of making empty space in siliconTOSHIBA KK·Filed 2006·Granted Jun 26, 2007·38 cites·26 claims
- 0397US6376888B1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2000·Granted Apr 23, 2002·175 cites·8 claims
- 0497US6333547B1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2000·Granted Dec 25, 2001·110 cites·14 claims
- 0596US7507634B2Method for fabricating a localize SOI in bulk silicon substrate including changing first trenches formed in the substrate into unclosed empty space by applying heat treatmentTOSHIBA KK·Filed 2007·Granted Mar 24, 2009·28 cites·7 claims
- 0696US6335251B2Semiconductor apparatus having elevated source and drain structure and manufacturing method thereforTOSHIBA KK·Filed 2001·Granted Jan 1, 2002·123 cites·4 claims
- 0795US7019364B1Semiconductor substrate having pillars within a closed empty spaceTOSHIBA KK·Filed 2000·Granted Mar 28, 2006·74 cites·12 claims
- 0895US6617226B1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2000·Granted Sep 9, 2003·75 cites·4 claims
- 0994US6784508B2Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereofTOSHIBA KK·Filed 2001·Granted Aug 31, 2004·65 cites·7 claims
- 1093US6346438B1Method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 1998·Granted Feb 12, 2002·91 cites·32 claims
- 1191US6570217B1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1999·Granted May 27, 2003·96 cites·16 claims
- 1290US6774462B2Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratioTOSHIBA KK·Filed 2002·Granted Aug 10, 2004·39 cites·14 claims
- 1390US6278164B1Semiconductor device with gate insulator formed of high dielectric filmTOSHIBA KK·Filed 1997·Granted Aug 21, 2001·81 cites·27 claims
- 1489US7947610B2Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereofTOSHIBA KK·Filed 2009·Granted May 24, 2011·10 cites·1 claims
- 1589US6383837B1Method of manufacturing a multi-chip semiconductor device effective to improve alignmentTOSHIBA KK·Filed 2000·Granted May 7, 2002·46 cites·7 claims
- 1689US6100132AMethod of deforming a trench by a thermal treatmentTOSHIBA KK·Filed 1998·Granted Aug 8, 2000·72 cites·10 claims
- 1789US5069244ALiquid source container deviceTOSHIBA KK·Filed 1990·Granted Dec 3, 1991·65 cites·7 claims
- 1888US7372113B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted May 13, 2008·31 cites·20 claims
- 1988US6326658B1Semiconductor device including an interface layer containing chlorineTOSHIBA KK·Filed 1999·Granted Dec 4, 2001·52 cites·2 claims
- 2085US6552380B1Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2000·Granted Apr 22, 2003·28 cites·6 claims
- 2184US6844234B2Semiconductor device and method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2002·Granted Jan 18, 2005·21 cites·10 claims
- 2284US6790723B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2001·Granted Sep 14, 2004·22 cites·4 claims
- 2384US6284583B1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1998·Granted Sep 4, 2001·60 cites·20 claims
- 2484US5888876ADeep trench filling method using silicon film deposition and silicon migrationTOSHIBA KK·Filed 1996·Granted Mar 30, 1999·80 cites·11 claims
- 2583US6093243ASemiconductor device and its fabricating methodTOSHIBA KK·Filed 1997·Granted Jul 25, 2000·50 cites·1 claims
- 2682US7972960B1Method for manufacturing thin filmTOSHIBA KK·Filed 2010·Granted Jul 5, 2011·5 cites·20 claims
- 2782US6767796B2Method of manufacturing semiconductor device and the semiconductor deviceTOSHIBA KK·Filed 2001·Granted Jul 27, 2004·23 cites·11 claims
- 2881US6600189B1Semiconductor device and semiconductor device manufacturing methodTOSHIBA KK·Filed 2000·Granted Jul 29, 2003·25 cites·4 claims
- 2981US6313047B2MOCVD method of tantalum oxide filmTOKYO ELECTRON LTD·Filed 2001·Granted Nov 6, 2001·27 cites·22 claims
- 3081US6232641B1Semiconductor apparatus having elevated source and drain structure and manufacturing method thereforTOSHIBA KK·Filed 1999·Granted May 15, 2001·43 cites·20 claims
- 3181US5970352AField effect transistor having elevated source and drain regions and methods for manufacturing the sameTOSHIBA KK·Filed 1998·Granted Oct 19, 1999·58 cites·41 claims
- 3280US7425480B2Semiconductor device and method of manufacture thereofTOSHIBA KK·Filed 2007·Granted Sep 16, 2008·5 cites·13 claims
- 3379US7306994B2Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereofTOSHIBA KK·Filed 2004·Granted Dec 11, 2007·15 cites·11 claims
- 3479US5582640ASemiconductor device and its fabricating methodTOSHIBA KK·Filed 1993·Granted Dec 10, 1996·50 cites·13 claims
- 3578US5605574ASemiconductor wafer support apparatus and methodTOSHIBA KK·Filed 1995·Granted Feb 25, 1997·51 cites·23 claims
- 3678US4575920AMethod of manufacturing an insulated-gate field-effect transistorTOSHIBA KK·Filed 1984·Granted Mar 18, 1986·29 cites·14 claims
- 3775US8796757B2Semiconductor memory device and method of manufacturing the sameKAI TETSUYA·Filed 2011·Granted Aug 5, 2014·4 cites·6 claims
- 3874US7303946B1Method of manufacturing a semiconductor device using an oxidation processTOSHIBA KK·Filed 2000·Granted Dec 4, 2007·13 cites·10 claims
- 3972US6794713B2Semiconductor device and method of manufacturing the same including a dual layer raised source and drainTOSHIBA KK·Filed 2003·Granted Sep 21, 2004·14 cites·4 claims
- 4071US6184083B1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1998·Granted Feb 6, 2001·35 cites·23 claims
- 4170US7041584B2Method of manufacturing semiconductor device and the semiconductor deviceTOSHIBA KK·Filed 2004·Granted May 9, 2006·10 cites·7 claims
- 4270US6893928B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted May 17, 2005·10 cites·4 claims
- 4370US6066872ASemiconductor device and its fabricating methodTOSHIBA KK·Filed 1997·Granted May 23, 2000·27 cites·5 claims
- 4468US6713359B1Semiconductor device and method of manufacturing the same including raised source/drain comprising SiGe or SiCTOSHIBA KK·Filed 2000·Granted Mar 30, 2004·12 cites·15 claims
- 4567US6989316B2Semiconductor device and method for manufacturingTOSHIBA KK·Filed 2003·Granted Jan 24, 2006·9 cites·1 claims
- 4667US5849089AEvaporator for liquid raw material and evaporation method thereforTOSHIBA KK·Filed 1997·Granted Dec 15, 1998·28 cites·28 claims
- 4766US7618876B2Semiconductor device and method of manufacturing the same by filling a trench which includes an additional coating stepTOSHIBA KK·Filed 2005·Granted Nov 17, 2009·2 cites·6 claims
- 4866US5451809ASmooth surface doped silicon film formationTOSHIBA KK·Filed 1994·Granted Sep 19, 1995·26 cites·10 claims
- 4966US4791074AMethod of manufacturing a semiconductor apparatusTOSHIBA KK·Filed 1987·Granted Dec 13, 1988·36 cites·12 claims
- 5065US7098115B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Aug 29, 2006·7 cites·9 claims
Showing the top 50 of 89 patent records by PatentIndex Score.
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