Inventor · disambiguated record
Tien-Yen Wang
Also filed as: WANG TIEN-YEN
22 granted patents·1 pending application·119 citations·filing 2008–2024
93Inventor score
Top patents by PatentIndex Score
23 records- 0198US8437192B23D two bit-per-cell NAND flash memoryLUNG HSIANG-LAN·Filed 2010·Granted May 7, 2013·61 cites·13 claims
- 0293US8908426B2Cell sensing circuit for phase change memory and methods thereofMACRONIX INT CO LTD·Filed 2012·Granted Dec 9, 2014·19 cites·20 claims
- 0390US8634235B2Phase change memory codingLUNG HSIANG-LAN·Filed 2010·Granted Jan 21, 2014·13 cites·22 claims
- 0484US9159412B1Staggered write and verify for phase change memoryMACRONIX INT CO LTD·Filed 2014·Granted Oct 13, 2015·8 cites·16 claims
- 0581US2025141354A1Charge pump system with low ripple output voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0678US9147449B2Reference and sensing with bit line stepping method of memoryMACRONIX INT CO LTD·Filed 2013·Granted Sep 29, 2015·5 cites·15 claims
- 0777US12218585B2Charge pump system with low ripple output voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 0876US11757356B2Charge pump system with low ripple output voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·0 cites·18 claims
- 0976US11336174B2Charge pump system with low ripple output voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 17, 2022·2 cites·20 claims
- 1073US10991426B2Memory device current limiterTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·2 cites·20 claims
- 1167US9685228B2Reference and sensing with bit line stepping method of memoryMACRONIX INT CO LTD·Filed 2015·Granted Jun 20, 2017·2 cites·12 claims
- 1265US8378753B2Oscillator with frequency determined by relative magnitudes of current sourcesMACRONIX INT CO LTD·Filed 2010·Granted Feb 19, 2013·2 cites·23 claims
- 1363US11437099B2Memory device current limiterTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 6, 2022·0 cites·20 claims
- 1458US9711217B1Memory device and operating method for resistive memory cellMACRONIX INT CO LTD·Filed 2016·Granted Jul 18, 2017·1 cites·14 claims
- 1556US11948635B2Memory device current limiterTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 1656US9336867B2Phase change memory codingMACRONIX INT CO LTD·Filed 2014·Granted May 10, 2016·1 cites·9 claims
- 1755US11842769B2Memory circuit with leakage current blocking mechanism and memory device having the memory circuitMACRONIX INT CO LTD·Filed 2022·Granted Dec 12, 2023·0 cites·20 claims
- 1855US9627058B2Resistance random access memory with accurate forming procedure, operating method thereof and operating system thereofMACRONIX INT CO LTD·Filed 2015·Granted Apr 18, 2017·1 cites·16 claims
- 1952US7812754B2Digital to analog converter and method thereofMACRONIX INT CO LTD·Filed 2008·Granted Oct 12, 2010·2 cites·14 claims
- 2049US12002536B2Sensing module, memory device, and sensing method applied to identify un-programmed/programmed state of non-volatile memory cellMACRONIX INT CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 2143US9558818B2Memory and memory managing methodMACRONIX INT CO LTD·Filed 2013·Granted Jan 31, 2017·0 cites·19 claims
- 2241US8836435B2Oscillator with frequency determined by relative magnitudes of current sourcesWANG TIEN-YEN·Filed 2013·Granted Sep 16, 2014·0 cites·18 claims
- 2337US9496015B1Array structure having local decoders in an electronic deviceMACRONIX INT CO LTD·Filed 2015·Granted Nov 15, 2016·0 cites·11 claims
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