Inventor · disambiguated record
David N. Okada
Also filed as: OKADA DAVID N
21 granted patents·6 pending applications·449 citations·filing 1987–2019
95Inventor score
Files withGREAT WALL SEMICONDUCTOR CORP14ANDERSON SAMUEL J4MOTOROLA INC3SHEN ZHENG JOHN2HOLM-KENNEDY JAMES W1
Top patents by PatentIndex Score
27 records- 0197US5294824AHigh voltage transistor having reduced on-resistanceMOTOROLA INC·Filed 1992·Granted Mar 15, 1994·248 cites·15 claims
- 0295US7842568B2Lateral power semiconductor device for high frequency power conversion system, has isolation layer formed over substrate for reducing minority carrier storage in substrateGREAT WALL SEMICONDUCTOR CORP·Filed 2007·Granted Nov 30, 2010·43 cites·9 claims
- 0385US8962425B2Semiconductor device and method of forming junction enhanced trench power MOSFET having gate structure embedded within trenchSHEN ZHENG JOHN·Filed 2012·Granted Feb 24, 2015·7 cites·6 claims
- 0483US9099519B2Semiconductor device and method of forming junction enhanced trench power MOSFETSHEN ZHENG JOHN·Filed 2012·Granted Aug 4, 2015·7 cites·21 claims
- 0581US7605435B2Bi-directional MOSFET power switch with single metal layerGREAT WALL SEMICONDUCTOR CORP·Filed 2007·Granted Oct 20, 2009·9 cites·4 claims
- 0678US9006099B2Semiconductor device and method of forming a power MOSFET with interconnect structure silicide layer and low profile bumpANDERSON SAMUEL J·Filed 2011·Granted Apr 14, 2015·6 cites·6 claims
- 0776US9640638B2Semiconductor device and method of forming a power MOSFET with interconnect structure to achieve lower RDSONGREAT WALL SEMICONDUCTOR CORP·Filed 2013·Granted May 2, 2017·4 cites·25 claims
- 0873US4885623ADistributed channel-bipolar deviceHOLM KENNEDY JAMES W·Filed 1987·Granted Dec 5, 1989·32 cites·42 claims
- 0972US8921186B2Semiconductor device and method of forming high voltage SOI lateral double diffused MOSFET with shallow trench insulatorSHEA PATRICK M·Filed 2009·Granted Dec 30, 2014·6 cites·12 claims
- 1072US5032878AHigh voltage planar edge termination using a punch-through retarding implantMOTOROLA INC·Filed 1990·Granted Jul 16, 1991·33 cites·11 claims
- 1168US9299774B2Device structure and methods of forming superjunction lateral power MOSFET with surrounding LDDGREAT WALL SEMICONDUCTOR CORP·Filed 2014·Granted Mar 29, 2016·2 cites·25 claims
- 1264US5130262AInternal current limit and overvoltage protection methodMASQUELIER MICHAEL P·Filed 1991·Granted Jul 14, 1992·27 cites·7 claims
- 1361US7800223B2Chip-scale monolithic load switch for portable applicationsGREAT WALL SEMICONDUCTOR CORP·Filed 2006·Granted Sep 21, 2010·2 cites·21 claims
- 1455US2019165093A1Insuperjunction with surrounding lightly doped drain regionRENESAS ELECTRONICS AMERICA INC·Filed 2019·Application pending·0 cites
- 1553US4966858AMethod of fabricating a lateral semiconductor structure including field plates for self-alignmentMOTOROLA INC·Filed 1989·Granted Oct 30, 1990·18 cites·17 claims
- 1652US8895430B2Method of making a semiconductor device comprising a land grid array flip chip bump system with short bumpsANDERSON SAMUEL J·Filed 2012·Granted Nov 25, 2014·1 cites·6 claims
- 1751US10199459B2Superjunction with surrounding lightly doped drain regionGREAT WALL SEMICONDUCTOR CORP·Filed 2016·Granted Feb 5, 2019·0 cites·10 claims
- 1850US9018706B2Monolithic MOSFET and Schottky diode for mobile phone boost converterGREAT WALL SEMICONDUCTOR CORP·Filed 2014·Granted Apr 28, 2015·0 cites·20 claims
- 1946US7649247B2Radiation hardened lateral MOSFET structureGREAT WALL SEMICONDUCTOR CORP·Filed 2007·Granted Jan 19, 2010·0 cites·20 claims
- 2046US7612418B2Monolithic power semiconductor structures including pairs of integrated devicesGREAT WALL SEMICONDUCTOR CORP·Filed 2004·Granted Nov 3, 2009·3 cites·9 claims
- 2145US2009014791A1Lateral Power MOSFET With Integrated Schottky DiodeGREAT WALL SEMICONDUCTOR CORP·Filed 2008·Application pending·0 cites
- 2244US7432595B2System and method to reduce metal series resistance of bumped chipGREAT WALL SEMICONDUCTOR CORP·Filed 2004·Granted Oct 7, 2008·1 cites·14 claims
- 2342US2006163658A1Monolithic MOSFET and schottky diode for mobile phone boost converterANDERSON SAMUEL J·Filed 2006·Application pending·0 cites
- 2441US2009321784A1Semiconductor Device and Method of Forming Lateral Power MOSFET with Integrated Schottky Diode on Monolithic SubstrateGREAT WALL SEMICONDUCTOR CORP·Filed 2009·Application pending·0 cites
- 2540US10707327B2MOSFET with reduced resistanceGREAT WALL SEMICONDUCTOR CORP·Filed 2015·Granted Jul 7, 2020·0 cites·16 claims
- 2637US2012205740A9Lateral Power MOSFET With Integrated Schottky DiodeANDERSON SAMUEL J·Filed 2010·Application pending·0 cites
- 2735US2008296690A1Metal interconnect System and Method for Direct Die AttachmentGREAT WALL SEMICONDUCTOR CORP·Filed 2004·Application pending·0 cites
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