Inventor · disambiguated record
Richard Kenneth Oxland
Also filed as: OXLAND RICHARD · OXLAND RICHARD KENNETH
29 granted patents·1 pending application·1,396 citations·filing 2012–2019
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD21TAIWAN SEMICONDUCTOR MFG4OXLAND RICHARD KENNETH3DOORNBOS GERBEN1VELLIANITIS GEORGIOS1
Top patents by PatentIndex Score
30 records- 0199US9214555B2Barrier layer for FinFET channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 15, 2015·591 cites·18 claims
- 0298US9472618B2Nanowire field effect transistor device having a replacement gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 18, 2016·747 cites·18 claims
- 0394US9472551B2Vertical CMOS structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 18, 2016·9 cites·20 claims
- 0493US10049946B2Vertical CMOS structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 14, 2018·7 cites·20 claims
- 0592US8987835B2FinFET with a buried semiconductor material between two finsVELLIANITIS GEORGIOS·Filed 2012·Granted Mar 24, 2015·11 cites·20 claims
- 0690US9412871B2FinFET with channel backside passivation layer device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 9, 2016·11 cites·15 claims
- 0789US9136332B2Method for forming a nanowire field effect transistor device having a replacement gateTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 15, 2015·5 cites·21 claims
- 0882US10121858B2Elongated semiconductor structure planarizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 6, 2018·3 cites·17 claims
- 0979US9355920B2Methods of forming semiconductor devices and FinFET devices, and FinFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 31, 2016·3 cites·20 claims
- 1078US9911599B2Method of fabricating nanowire field effect transistor having a preplacement gate by using sacrificial etch layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 6, 2018·1 cites·19 claims
- 1178US9252237B2Transistors, semiconductor devices, and methods of manufacture thereofDOORNBOS GERBEN·Filed 2012·Granted Feb 2, 2016·3 cites·20 claims
- 1275US10510853B2FinFET with two fins on STITAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·20 claims
- 1370US10164024B2Heterostructures for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·1 cites·20 claims
- 1469US9502541B2Forming fins on the sidewalls of a sacrificial fin to form a FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·1 cites·20 claims
- 1566US10522621B2Nanowire field effect transistor device having a replacement gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 31, 2019·0 cites·19 claims
- 1666US10276660B2Nanowire field effect transistor having a metal gate surrounding semiconductor nanowireTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·0 cites·19 claims
- 1766US9385198B2Heterostructures for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 5, 2016·1 cites·27 claims
- 1860US8866195B2III-V compound semiconductor device having metal contacts and method of making the sameOXLAND RICHARD KENNETH·Filed 2012·Granted Oct 21, 2014·1 cites·21 claims
- 1959US10861933B2Elongated semiconductor structure planarizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 8, 2020·0 cites·20 claims
- 2057US10164031B2FinFET with two fins on STITAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·0 cites·20 claims
- 2157US9054186B2III-V compound semiconductor device having metal contacts and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 9, 2015·0 cites·20 claims
- 2256US9231102B2Asymmetric semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·0 cites·20 claims
- 2355US9768263B2Semiconductor devices and FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·0 cites·20 claims
- 2454US9406791B2Transistors, semiconductor devices, and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 2, 2016·0 cites·20 claims
- 2554US9391153B2III-V compound semiconductor device having metal contacts and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 12, 2016·0 cites·20 claims
- 2650US9685514B2III-V compound semiconductor device having dopant layer and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 20, 2017·0 cites·18 claims
- 2749US9887272B2Method for forming counterdoped semiconductor device comprising first epitaxial layer and second epitaxial layer formed over first epitaxial layer having conductivity type different than second epitaxial layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 6, 2018·0 cites·17 claims
- 2849US9590084B2Graded heterojunction nanowire deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 7, 2017·0 cites·18 claims
- 2945US2013299895A1Iii-v compound semiconductor device having dopant layer and method of making the sameOXLAND RICHARD KENNETH·Filed 2012·Application pending·0 cites
- 3037US9680027B2Nickelide source/drain structures for CMOS transistorsOXLAND RICHARD KENNETH·Filed 2012·Granted Jun 13, 2017·0 cites·18 claims
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