Inventor · disambiguated record
Dustin William Erickson
Also filed as: ERICKSON DUSTIN · ERICKSON DUSTIN W · ERICKSON DUSTIN WILLIAM
16 granted patents·1 pending application·361 citations·filing 2005–2016
91Inventor score
Files withSAMSUNG ELECTRONICS CO LTD11ARAKI SATORU2WESTERN DIGITAL FREMONT LLC2HGST Netherlands BV1PARK CHANG MAN1
Top patents by PatentIndex Score
17 records- 0197US7684160B1Magnetoresistive structure having a novel specular and barrier layer combinationWESTERN DIGITAL FREMONT LLC·Filed 2006·Granted Mar 23, 2010·151 cites·18 claims
- 0297US7417832B1Magnetoresistive structure having a novel specular and filter layer combinationWESTERN DIGITAL FREMONT LLC·Filed 2005·Granted Aug 26, 2008·156 cites·18 claims
- 0395US8804287B2Material for use in a TMR read gap without adversely affecting the TMR effectARAKI SATORU·Filed 2010·Granted Aug 12, 2014·16 cites·7 claims
- 0494US9129690B2Method and system for providing magnetic junctions having improved characteristicsPARK CHANG-MAN·Filed 2012·Granted Sep 8, 2015·27 cites·8 claims
- 0582US9876164B1Method and system for providing a low moment free layer magnetic junction usable in spin transfer torque applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 23, 2018·4 cites·17 claims
- 0672US10297278B2Material for use in a TMR read gap without adversely affecting the TMR effectHGST Netherlands BV·Filed 2014·Granted May 21, 2019·2 cites·20 claims
- 0770US9666794B2Multi-stage element removal using absorption layersSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 30, 2017·2 cites·18 claims
- 0866US9825220B2B2-MTJ design with texture blocking decoupling layer for sub-25 nm STT-MRAMSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 21, 2017·2 cites·18 claims
- 0963US9559296B2Method for providing a perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic devices using a sacrificial insertion layerSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 31, 2017·1 cites·17 claims
- 1045US8867177B2Magnetic sensor having improved resistance to thermal stress induced instabilityARAKI SATORU·Filed 2010·Granted Oct 21, 2014·0 cites·22 claims
- 1140US9559143B2Method and system for providing magnetic junctions including free layers that are cobalt-freeSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 31, 2017·0 cites·20 claims
- 1239US9735350B2Method and system for removing boron from magnetic junctions usable in spin transfer torque memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 15, 2017·0 cites·15 claims
- 1337US10164175B2Method and system for providing a magnetic junction usable in spin transfer torque applications using multiple stack depositionsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 25, 2018·0 cites·14 claims
- 1435US9806253B2Method for providing a high perpendicular magnetic anisotropy layer in a magnetic junction usable in spin transfer torque magnetic devices using multiple annealsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 31, 2017·0 cites·13 claims
- 1535US2016005791A1Method and system for providing a thin pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 1633US9472750B2Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 18, 2016·0 cites·17 claims
- 1732US9799382B2Method for providing a magnetic junction on a substrate and usable in a magnetic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 24, 2017·0 cites·12 claims
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