Inventor · disambiguated record
Shao-Wei Wang
Also filed as: Wang shao-wei
20 granted patents·11 pending applications·59 citations·filing 2011–2024
92Inventor score
Top patents by PatentIndex Score
31 records- 0194US9418853B1Method for forming a stacked layer structureUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 16, 2016·21 cites·14 claims
- 0288US8536038B2Manufacturing method for metal gate using ion implantationWang shao-wei·Filed 2011·Granted Sep 17, 2013·10 cites·35 claims
- 0388US8426277B2Semiconductor processLIN CHIEN-LIANG·Filed 2011·Granted Apr 23, 2013·9 cites·22 claims
- 0478US8987096B2Semiconductor processCHEN YING-TSUNG·Filed 2012·Granted Mar 24, 2015·5 cites·15 claims
- 0577US8501636B1Method for fabricating silicon dioxide layerWang shao-wei·Filed 2012·Granted Aug 6, 2013·5 cites·16 claims
- 0675US11876122B2Method for forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jan 16, 2024·0 cites·6 claims
- 0775US8802579B2Semiconductor structure and fabrication method thereofLIN CHIEN-LIANG·Filed 2011·Granted Aug 12, 2014·3 cites·17 claims
- 0875US2025072060A1Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0969US11862727B2Method for fabricating fin structure for fin field effect transistorUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jan 2, 2024·0 cites·8 claims
- 1069US11545557B2Semiconductor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jan 3, 2023·0 cites·6 claims
- 1168US12402367B2Semiconductor structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Aug 26, 2025·0 cites·14 claims
- 1266US8872286B2Metal gate structure and fabrication method thereofCHENG TSUN-MIN·Filed 2011·Granted Oct 28, 2014·3 cites·8 claims
- 1362US8921238B2Method for processing high-k dielectric layerWang shao-wei·Filed 2011·Granted Dec 30, 2014·1 cites·14 claims
- 1461US9406772B1Semiconductor structure with a multilayer gate oxide and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 2, 2016·1 cites·7 claims
- 1561US9281374B2Metal gate structure and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2014·Granted Mar 8, 2016·1 cites·15 claims
- 1658US11581438B2Fin structure for fin field effect transistor and method for fabrication the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Feb 14, 2023·0 cites·5 claims
- 1756US2024234505A1Semiconductor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 1850US9406516B2High-K metal gate process for lowering junction leakage and interface traps in NMOS transistorUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 2, 2016·0 cites·11 claims
- 1947US2015069534A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 2045US9349599B1Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2014·Granted May 24, 2016·0 cites·17 claims
- 2143US8445363B2Method of fabricating an epitaxial layerLU TSUO-WEN·Filed 2011·Granted May 21, 2013·0 cites·17 claims
- 2241US2016172190A1Gate oxide formation processUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2340US8981865B2First and second differential transmission lines where the second transmission line includes bent portions to surround the first transmission lineHON HAI PREC IND CO LTD·Filed 2012·Granted Mar 17, 2015·0 cites·6 claims
- 2440US8501634B2Method for fabricating gate structureWang shao-wei·Filed 2011·Granted Aug 6, 2013·0 cites·17 claims
- 2540US2019371916A1Semiconductor structure having metal gate and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 2637US2013012012A1Semiconductor processLIN CHIEN-LIANG·Filed 2011·Application pending·0 cites
- 2737US2012329285A1Gate dielectric layer forming methodWang shao-wei·Filed 2011·Application pending·0 cites
- 2835US2012264284A1Manufacturing method for metal gate structureWang shao-wei·Filed 2011·Application pending·0 cites
- 2935US2012264267A1Method for fabricating mos transistorLU TSUO-WEN·Filed 2011·Application pending·0 cites
- 3035US2012309171A1Method for fabricating semiconductor deviceLU TSUO-WEN·Filed 2011·Application pending·0 cites
- 3130US2012306028A1Semiconductor process and structure thereofWANG YU-REN·Filed 2011·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →