Inventor · disambiguated record
Joung-Wei Liou
Also filed as: LIOU JOUNG-WEI
61 granted patents·10 pending applications·123 citations·filing 2004–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD47TAIWAN SEMICONDUCTOR MFG14LIOU JOUNG-WEI4SHIH PO-CHENG2CHOU YOU-HUA1
Top patents by PatentIndex Score
71 records- 0195US10879456B2Sidewall spacer stack for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 29, 2020·5 cites·20 claims
- 0294US12080547B2Interconnect system with improved low-K dielectricsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·2 cites·20 claims
- 0393US9812390B2Semiconductor devices including conductive features with capping layers and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·8 cites·20 claims
- 0492US11043251B2Magnetic tunnel junction device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·11 cites·20 claims
- 0590US9870944B2Back-end-of-line (BEOL) interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 16, 2018·6 cites·20 claims
- 0689US10510586B1Multi-layer structure having a dense middle layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·4 cites·20 claims
- 0788US10761427B2Photoresist and method of formation and useTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 1, 2020·3 cites·21 claims
- 0888US9341945B2Photoresist and method of formation and useTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 17, 2016·5 cites·20 claims
- 0988US8021992B2High aspect ratio gap fill application using high density plasma chemical vapor depositionTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 20, 2011·21 cites·18 claims
- 1087US12315812B2Semiconductor structure having high breakdown voltage etch-stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 1187US9093455B2Back-end-of-line (BEOL) interconnect structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 28, 2015·7 cites·24 claims
- 1287US2025329517A1Wafer processing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1386US12268096B2Spacer stack for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
- 1486US9059259B2Hard mask for back-end-of-line (BEOL) interconnect structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 16, 2015·8 cites·18 claims
- 1585US12287575B2Photoresist and method of formation and useTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 1684US2025224673A1Photoresist and method of formation and useTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1784US2025285977A1Semiconductor structure having high breakdown voltage etch-stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1883US10008367B2Gas diffuser unit, process chamber and wafer processing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 26, 2018·4 cites·12 claims
- 1983US9054110B2Low-K dielectric layer and porogenLIOU JOUNG-WEI·Filed 2011·Granted Jun 9, 2015·5 cites·21 claims
- 2082US11139200B2Multi-layer structure having a dense middle layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 5, 2021·2 cites·20 claims
- 2180US12322648B2Interlayer dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 2280US11961803B2Semiconductor structure having high breakdown voltage etch-stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 2379US12310257B2Spacer scheme and method for MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 2479US9349689B2Semiconductor devices including conductive features with capping layers and methods of forming the sameYang hui-chun·Filed 2012·Granted May 24, 2016·5 cites·19 claims
- 2579US2024381784A1Spacer scheme and method for mramTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2679US2025204265A1Spacer Stack For Magnetic Tunnel JunctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2778US2024363336A1Interconnect system with improved low-k dielectricsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2876US10748765B2Multi-layer mask and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 18, 2020·1 cites·20 claims
- 2976US8889567B2Apparatus and methods for low K dielectric layersPENG YU-YUN·Filed 2011·Granted Nov 18, 2014·4 cites·20 claims
- 3075US12154608B2Magnetic tunnel junction device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·0 cites·20 claims
- 3175US9177918B2Apparatus and methods for low k dielectric layersTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 3, 2015·2 cites·20 claims
- 3275US9130022B2Method of back-end-of-line (BEOL) fabrication, and devices formed by the methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 8, 2015·5 cites·25 claims
- 3374US11785858B2Methods for forming a spacer stack for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 10, 2023·0 cites·20 claims
- 3474US11650500B2Photoresist and method of formation and useTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 16, 2023·0 cites·20 claims
- 3573US9748175B1Conductive structure in semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 29, 2017·3 cites·20 claims
- 3672US11818964B2Spacer scheme and method for MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·0 cites·20 claims
- 3772US10181443B2Support structure for barrier layer of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 15, 2019·2 cites·20 claims
- 3872US2025174493A1Interlayer dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3971US12394602B2Wafer processing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 19, 2025·0 cites·20 claims
- 4070US8994178B2Interconnect structure and method for forming the sameSHIH PO-CHENG·Filed 2012·Granted Mar 31, 2015·2 cites·20 claims
- 4169US9257331B2Method of making interconnect structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·1 cites·20 claims
- 4269US8927420B2Mechanism of forming semiconductor device having support structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 6, 2015·2 cites·20 claims
- 4367US11990167B2Magnetic tunnel junction device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 21, 2024·0 cites·20 claims
- 4467US11488825B2Multi-layer mask and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·0 cites·20 claims
- 4566US11283005B2Spacer scheme and method for MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·0 cites·21 claims
- 4666US9269614B2Method of forming semiconductor device using remote plasma treatmentTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Feb 23, 2016·1 cites·20 claims
- 4766US9236294B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 12, 2016·1 cites·20 claims
- 4865US11769692B2High breakdown voltage inter-metal dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 26, 2023·0 cites·20 claims
- 4965US8481412B2Method of and apparatus for active energy assist bakingKO CHUNG-CHI·Filed 2010·Granted Jul 9, 2013·1 cites·20 claims
- 5065US7349086B2Systems and methods for optical measurementTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Mar 25, 2008·1 cites·22 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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