Inventor · disambiguated record
Ryota Sasajima
Also filed as: SASAJIMA RYOTA
36 granted patents·4 pending applications·1,585 citations·filing 2003–2018
97Inventor score
Top patents by PatentIndex Score
40 records- 0199USD783351SGas nozzle substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2015·Granted Apr 11, 2017·473 cites·1 claims
- 0298US8415258B2Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatusAKAE NAONORI·Filed 2011·Granted Apr 9, 2013·480 cites·19 claims
- 0398US8076251B2Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatusAKAE NAONORI·Filed 2010·Granted Dec 13, 2011·489 cites·17 claims
- 0493US9620357B2Method of manufacturing semiconductor device, substrate processing apparatus, and recording mediumHITACHI INT ELECTRIC INC·Filed 2016·Granted Apr 11, 2017·8 cites·14 claims
- 0593US8252701B2Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatusSASAJIMA RYOTA·Filed 2010·Granted Aug 28, 2012·16 cites·10 claims
- 0692US9263253B2Method of manufacturing a SiOCN film, substrate processing apparatus, and recording mediumHITACHI INT ELECTRIC INC·Filed 2013·Granted Feb 16, 2016·9 cites·12 claims
- 0792US7625205B2Heat treatment apparatus and method of manufacturing substratesHITACHI INT ELECTRIC INC·Filed 2005·Granted Dec 1, 2009·21 cites·8 claims
- 0890US10081868B2Gas supply nozzle, substrate processing apparatus, and non-transitory computer-readable recording mediumHITACHI INT ELECTRIC INC·Filed 2016·Granted Sep 25, 2018·6 cites·19 claims
- 0989US8951919B2Method of manufacturing semiconductor device, substrate processing apparatus, and recording mediumHITACHI INT ELECTRIC INC·Filed 2014·Granted Feb 10, 2015·6 cites·10 claims
- 1088US8728954B2Method of manufacturing semiconductor device, substrate processing apparatus, and recording mediumHITACHI INT ELECTRIC INC·Filed 2013·Granted May 20, 2014·6 cites·12 claims
- 1186US9218955B2Method of manufacturing semiconductor device, substrate processing apparatus, and recording mediumHITACHI INT ELECTRIC INC·Filed 2013·Granted Dec 22, 2015·7 cites·13 claims
- 1286US8546272B2Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatusHIROSE YOSHIRO·Filed 2011·Granted Oct 1, 2013·6 cites·9 claims
- 1383US9455137B2Method of manufacturing semiconductor deviceHITACHI INT ELECTRIC INC·Filed 2015·Granted Sep 27, 2016·3 cites·24 claims
- 1483US7891975B2Heat treatment apparatus and method of manufacturing substrateHITACHI INT ELECTRIC INC·Filed 2005·Granted Feb 22, 2011·9 cites·14 claims
- 1582US9390911B2Method of manufacturing semiconductor deviceHITACHI INT ELECTRIC INC·Filed 2013·Granted Jul 12, 2016·5 cites·17 claims
- 1682US7820118B2Substrate processing apparatus having covered thermocouple for enhanced temperature controlHITACHI INT ELECTRIC INC·Filed 2006·Granted Oct 26, 2010·8 cites·11 claims
- 1781US9837262B2Method of manufacturing a SiOCN film, substrate processing apparatus and recording mediumHITACHI INT ELECTRIC INC·Filed 2016·Granted Dec 5, 2017·2 cites·11 claims
- 1881US9340872B2Cleaning method, manufacturing method of semiconductor device, substrate processing apparatus, and recording mediumHITACHI INT ELECTRIC INC·Filed 2015·Granted May 17, 2016·3 cites·16 claims
- 1980US10036092B2Method of manufacturing semiconductor device, substrate processing apparatus, and recording mediumHITACHI INT ELECTRIC INC·Filed 2015·Granted Jul 31, 2018·3 cites·18 claims
- 2080US9966251B2Method of manufacturing semiconductor device and substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2015·Granted May 8, 2018·2 cites·14 claims
- 2180US9966252B2Method of manufacturing semiconductor device and substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2015·Granted May 8, 2018·2 cites·15 claims
- 2277US9394607B2Substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2015·Granted Jul 19, 2016·3 cites·15 claims
- 2376US8946092B2Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2013·Granted Feb 3, 2015·2 cites·19 claims
- 2476US8901014B2Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus and non-transitory computer readable recording mediumOTA YOSUKE·Filed 2012·Granted Dec 2, 2014·3 cites·14 claims
- 2575US8268731B2Semiconductor device producing method, substrate producing method and substrate processing apparatusNAKAMURA NAOTO·Filed 2006·Granted Sep 18, 2012·6 cites·9 claims
- 2674US9039838B2Method of manufacturing semiconductor device and substrate processing apparatusSASAJIMA RYOTA·Filed 2012·Granted May 26, 2015·2 cites·10 claims
- 2771US9881789B2Method of manufacturing semiconductor device, substrate processing apparatus, and recording mediumHITACHI INT ELECTRIC INC·Filed 2017·Granted Jan 30, 2018·1 cites·10 claims
- 2869US9431236B2Method of manufacturing semiconductor device, substrate processing apparatus, and recording mediumHITACHI INT ELECTRIC INC·Filed 2015·Granted Aug 30, 2016·1 cites·10 claims
- 2969US9412585B2Method of manufacturing a SiOCN film, substrate processing apparatus, and recording mediumHITACHI INT ELECTRIC INC·Filed 2015·Granted Aug 9, 2016·1 cites·15 claims
- 3065US9378943B2Method of manufacturing semiconductor device, method of processing substrate substrate processing apparatus and non-transitory computer-readable recording mediumHIROSE YOSHIRO·Filed 2012·Granted Jun 28, 2016·1 cites·14 claims
- 3163US9136114B2Method of manufacturing semiconductor device, substrate processing method, computer-readable medium with program for executing a substrate processing method, and substrate processing apparatusSASAJIMA RYOTA·Filed 2011·Granted Sep 15, 2015·1 cites·14 claims
- 3257US2015101755A1Substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2014·Application pending·0 cites
- 3353US2018363137A1Gas supply nozzle, substrate processing apparatus, and non-transitory computer-readable recording mediumHITACHI INT ELECTRIC INC·Filed 2018·Application pending·0 cites
- 3450US9096928B2Method of manufacturing semiconductor device and substrate processing apparatusSASAJIMA RYOTA·Filed 2011·Granted Aug 4, 2015·0 cites·14 claims
- 3548US10287680B2Method of manufacturing semiconductor device, substrate processing apparatus, and recording mediumHITACHI INT ELECTRIC INC·Filed 2018·Granted May 14, 2019·0 cites·16 claims
- 3643US10066294B2Method of manufacturing semiconductor device, substrate processing apparatus, and recording mediumHITACHI INT ELECTRIC INC·Filed 2016·Granted Sep 4, 2018·0 cites·15 claims
- 3743US7901206B2Heat-treating apparatus and method of producing substratesHITACHI INT ELECTRIC INC·Filed 2006·Granted Mar 8, 2011·0 cites·14 claims
- 3842US9691606B2Method of manufacturing semiconductor device, substrate processing apparatus, and recording mediumHITACHI INT ELECTRIC INC·Filed 2015·Granted Jun 27, 2017·0 cites·17 claims
- 3942US2004018650A1Substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2003·Application pending·0 cites
- 4037US2012280369A1Method for manufacturing semiconductor device, substrate processing apparatus, and semiconductor deviceSAITO TATSUYUKI·Filed 2010·Application pending·0 cites
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