Inventor · disambiguated record
Tatsuya Tanabe
Also filed as: TANABE TATSUYA
10 granted patents·2 pending applications·86 citations·filing 1999–2012
87Inventor score
Top patents by PatentIndex Score
12 records- 0192US7884393B2High electron mobility transistor, field-effect transistor, and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Feb 8, 2011·14 cites·4 claims
- 0280US8148751B2Group III nitride semiconductor wafer and group III nitride semiconductor deviceHASHIMOTO SHIN·Filed 2010·Granted Apr 3, 2012·4 cites·12 claims
- 0378US7749828B2Method of manufacturing group III Nitride TransistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Jul 6, 2010·5 cites·9 claims
- 0477US8461570B2Semiconductor device and manufacturing method thereofFUJII KEI·Filed 2010·Granted Jun 11, 2013·4 cites·7 claims
- 0574US7872285B2Vertical gallium nitride semiconductor device and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Jan 18, 2011·6 cites·22 claims
- 0670US6150677AMethod of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1999·Granted Nov 21, 2000·47 cites·8 claims
- 0769US8404571B2Film deposition methodHASHIMOTO SHIN·Filed 2009·Granted Mar 26, 2013·3 cites·12 claims
- 0866US8633514B2Group III nitride semiconductor wafer and group III nitride semiconductor deviceHASHIMOTO SHIN·Filed 2012·Granted Jan 21, 2014·1 cites·24 claims
- 0965US8541816B2III nitride electronic device and III nitride semiconductor epitaxial substrateHASHIMOTO SHIN·Filed 2008·Granted Sep 24, 2013·2 cites·14 claims
- 1048US2012006263A1Film deposition apparatusHASHIMOTO SHIN·Filed 2009·Application pending·0 cites
- 1141US2008265258A1Group III Nitride Semiconductor Device and Epitaxial SubstrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Application pending·0 cites
- 1236US8410524B2Group III nitride semiconductor device and epitaxial substrateTANABE TATSUYA·Filed 2006·Granted Apr 2, 2013·0 cites·2 claims
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