Inventor · disambiguated record
Han Su Oh
Also filed as: OH HAN-SU
16 granted patents·2 pending applications·234 citations·filing 1995–2021
94Inventor score
Files withSAMSUNG ELECTRONICS CO LTD11HYNIX SEMICONDUCTOR INC2HYUNDAI ELECTRONICS IND2LG SEMICON CO LTD2DONG YAOQI1
Top patents by PatentIndex Score
18 records- 0191US6476457B2Semiconductor device with drift layerHYUNDAI ELECTRONICS IND·Filed 2000·Granted Nov 5, 2002·58 cites·30 claims
- 0289US10396205B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 27, 2019·7 cites·20 claims
- 0388US10734273B2Semiconductor device including isolation layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 4, 2020·5 cites·15 claims
- 0488US9576959B1Semiconductor device having first and second gate electrodes and method of manufacturing the sameDONG YAOQI·Filed 2016·Granted Feb 21, 2017·11 cites·19 claims
- 0582US6448611B1High power semiconductor device and fabrication method thereofHYNIX SEMICONDUCTOR INC·Filed 2000·Granted Sep 10, 2002·29 cites·20 claims
- 0680US11101166B2Semiconductor device including isolation layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 24, 2021·1 cites·19 claims
- 0779US7078775B2MOS transistor having a mesh-type gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 18, 2006·28 cites·31 claims
- 0873US9831240B2Elevated source drain semiconductor device with L-shaped spacers and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 28, 2017·5 cites·20 claims
- 0972US11557504B2Semiconductor device including isolation layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 17, 2023·0 cites·20 claims
- 1071US5953602AEEPROM cell and related method of making thereofLG SEMICON CO LTD·Filed 1997·Granted Sep 14, 1999·36 cites·5 claims
- 1166US7307335B2Semiconductor device having MOS varactor and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 11, 2007·8 cites·8 claims
- 1261US7611956B2Semiconductor device having MOS varactor and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 3, 2009·6 cites·16 claims
- 1358US6613633B2Method for manufacturing a high power semiconductor device having a field plate extendedly disposed on a gateHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Sep 2, 2003·7 cites·10 claims
- 1458US5736765AEEPROM cell having improved topology and reduced leakage currentLG SEMICON CO LTD·Filed 1995·Granted Apr 7, 1998·21 cites·7 claims
- 1557US7049218B2Method of fabricating local interconnection using selective epitaxial growthSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 23, 2006·5 cites·21 claims
- 1643US6177321B1Semiconductor device and fabrication method thereofHYUNDAI ELECTRONICS IND·Filed 1999·Granted Jan 23, 2001·7 cites·6 claims
- 1742US2007085165A1Capacitor, semiconductor device including the capacitor and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1837US2015097250A1Semiconductor Devices and Methods for Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
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