Inventor · disambiguated record
Huang-Chung Cheng
Also filed as: CHENG HUANG-CHUNG
29 granted patents·13 pending applications·610 citations·filing 1994–2016
97Inventor score
Files withNAT SCIENCE COUNCIL12CHENG HUANG-CHUNG8ANALOG AND POWER ELECTRONICS C3CHUNGHWA PICTURE TUBES LTD3ALLIED MATERIAL CORP2
Top patents by PatentIndex Score
42 records- 0191US6738113B2Structure of organic light-emitting material TFT LCD and the method for making the sameALLIED MATERIAL CORP·Filed 2002·Granted May 18, 2004·55 cites·14 claims
- 0291US6432758B1Recrystallization method of polysilicon film in thin film transistorCHENG HUANG-CHUNG·Filed 2001·Granted Aug 13, 2002·78 cites·14 claims
- 0387US6259618B1Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startupANALOG AND POWER ELECTRONICS C·Filed 2000·Granted Jul 10, 2001·41 cites·4 claims
- 0486US6420092B1Low dielectric constant nanotubeFiled 1999·Granted Jul 16, 2002·117 cites·42 claims
- 0584US7411430B2Analog output buffer circuit for flat panel displayCHUNGHWA PICTURE TUBES LTD·Filed 2006·Granted Aug 12, 2008·6 cites·6 claims
- 0682US6350628B1Method of fabricating a field emission device on the sidewalls of holes formed in an insulator layerNAT SCIENCE COUNCIL·Filed 2000·Granted Feb 26, 2002·21 cites·17 claims
- 0771US6525453B2Field emitting displayCHENG HUANG CHUNG·Filed 2001·Granted Feb 25, 2003·21 cites·8 claims
- 0871US5643032AMethod of fabricating a field emission deviceNAT SCIENCE COUNCIL·Filed 1995·Granted Jul 1, 1997·24 cites·15 claims
- 0970US7413912B2Microsensor with ferroelectric material and method for fabricating the sameINSTR TECHNOLOGY RES CT NAT AP·Filed 2005·Granted Aug 19, 2008·8 cites·10 claims
- 1069US6734930B2Structure of organic light-emitting TFT LCD and method of making the sameALLIED MATERIAL CORP·Filed 2002·Granted May 11, 2004·11 cites·16 claims
- 1169US6517405B1Process for forming a film on a substrate having a field emitterNAT SCIENCE COUNCIL·Filed 2000·Granted Feb 11, 2003·9 cites·2 claims
- 1268US6423618B1Method of manufacturing trench gate structureANALOG AND POWER ELECTRONICS C·Filed 1999·Granted Jul 23, 2002·29 cites·24 claims
- 1368US5536676ALow temperature formation of silicided shallow junctions by ion implantation into thin silicon filmsNAT SCIENCE COUNCIL·Filed 1995·Granted Jul 16, 1996·30 cites·19 claims
- 1467US5504021AMethod of fabricating thin O/N/O stacked dielectric for high-density DRAMsUNITED MICROELECTRONICS CORP·Filed 1994·Granted Apr 2, 1996·26 cites·2 claims
- 1566US8143623B2Thin film transistor and manufacturing method thereofCHENG HUANG-CHUNG·Filed 2010·Granted Mar 27, 2012·2 cites·7 claims
- 1666US6639632B2Backlight module of liquid crystal displayCHENG HUANG-CHUNG·Filed 2001·Granted Oct 28, 2003·12 cites·4 claims
- 1763US5970360ADRAM cell with a roughened poly-Si electrodeMOSEL VITELIC INC·Filed 1996·Granted Oct 19, 1999·34 cites·40 claims
- 1861US6888203B2Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startupANALOG AND POWER ELECTRICS COR·Filed 2003·Granted May 3, 2005·11 cites·6 claims
- 1961US6872113B2Method for making a structure of organic light-emitting material TFT displayALLIED MATERIAL TECHNOLOGY COR·Filed 2003·Granted Mar 29, 2005·7 cites·8 claims
- 2058US6137122ALatch-up controllable insulated gate bipolar transistorANALOG AND POWER ELECTRONICS C·Filed 1999·Granted Oct 24, 2000·19 cites·14 claims
- 2156US5779514ATechnique to fabricate chimney-shaped emitters for field-emission devicesNAT SCIENCE COUNCIL·Filed 1996·Granted Jul 14, 1998·13 cites·12 claims
- 2252US6739930B2Process for forming field emission electrode for manufacturing field emission arrayNAT SCIENCE COUNCIL·Filed 2001·Granted May 25, 2004·3 cites·17 claims
- 2350US5624867ALow temperature formation of palladium silicided shallow junctions using implant through metal/silicide technologyNAT SCIENCE COUNCIL·Filed 1995·Granted Apr 29, 1997·17 cites·20 claims
- 2449US6975371B2Structure of organic light-emitting TFT LCD and method of making the sameALLIED MATERIAL TECHNOLOGY COR·Filed 2003·Granted Dec 13, 2005·3 cites·16 claims
- 2546US8247277B2Manufacturing method of a thin film transistorCHENG HUANG-CHUNG·Filed 2012·Granted Aug 21, 2012·0 cites·9 claims
- 2645US2010258808A1Thin film transistor and manufacturing method thereofCHUNGHWA PICTURE TUBES LTD·Filed 2009·Application pending·0 cites
- 2744US2008171409A1Method for fabricating bottom-gate low-temperature polysilicon thin film transistorCHENG HUANG-CHUNG·Filed 2007·Application pending·0 cites
- 2841US2018146887A1Respiration Detection DeviceCHENG HUANG CHUNG·Filed 2016·Application pending·0 cites
- 2941US2010133544A1Thin film transistor and fabricating method thereofCHUNGHWA PICTURE TUBES LTD·Filed 2009·Application pending·0 cites
- 3039US8614444B2Top-gate transistor array substrateCHENG HUANG-CHUNG·Filed 2011·Granted Dec 24, 2013·0 cites·8 claims
- 3136US2003059968A1Method of producing field emission displayNAT SCIENCE COUNCIL·Filed 2002·Application pending·0 cites
- 3235US2002102805A1Method for forming shallow junctionFiled 2001·Application pending·0 cites
- 3335US2002072248A1Process of forming a low dielectric constant materialNAT SCIENCE COUNCIL·Filed 2001·Application pending·0 cites
- 3435US2002100895A1Chemical mechanical polishing slurryFiled 2001·Application pending·0 cites
- 3535US2002132413A1Method of fabricating a MOS transistorFiled 2001·Application pending·0 cites
- 3634US6255203B1Technique for low-temperature formation of excellent silicided α-Si gate structuresNAT SCIENCE COUNCIL·Filed 1998·Granted Jul 3, 2001·4 cites·7 claims
- 3734US2001046147A1Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startupFiled 2001·Application pending·0 cites
- 3833US2003082881A1Method for manufacturing a self-aligned MOS transistorFiled 2002·Application pending·0 cites
- 3933US2002101252A1Structure for capacitance measurementNAT SCIENCE COUNCIL·Filed 2001·Application pending·0 cites
- 4032US6063661AMethod for forming a bottom polysilicon electrode of a stacked capacitor for DRAMNAT SCIENCE COUNCIL·Filed 1996·Granted May 16, 2000·3 cites·10 claims
- 4131US2002053695A1Split buried layer for high voltage LDMOS transistorFiled 2001·Application pending·0 cites
- 4229US5910452AMethod for reducing antenna effect during plasma etching procedure for semiconductor device fabricationWINBOND ELECTRONICS CORP·Filed 1996·Granted Jun 8, 1999·6 cites·14 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →