Inventor · disambiguated record
Yukimasa Uchida
Also filed as: UCHIDA YUKIMASA
32 granted patents·1,131 citations·filing 1974–1992
98Inventor score
Top patents by PatentIndex Score
32 records- 0196US4585955AInternally regulated power voltage circuit for MIS semiconductor integrated circuitTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Apr 29, 1986·98 cites·16 claims
- 0296US4432610ALiquid crystal display deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Feb 21, 1984·142 cites·19 claims
- 0396US4385308ANon-volatile semiconductor memory deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted May 24, 1983·111 cites·3 claims
- 0495US4044343ANon-volatile random access memory systemTOKYO SHIBAURA ELECTRIC CO·Filed 1976·Granted Aug 23, 1977·63 cites·4 claims
- 0590US4608666ASemiconductor memoryTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted Aug 26, 1986·53 cites·4 claims
- 0690US4532607AProgrammable circuit including a latch to store a fuse's stateTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Jul 30, 1985·49 cites·12 claims
- 0789US4837460AComplementary MOS circuit having decreased parasitic capacitanceTOSHIBA KK·Filed 1984·Granted Jun 6, 1989·51 cites·3 claims
- 0888US4517583ASemiconductor integrated circuit including a fuse elementTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted May 14, 1985·63 cites·9 claims
- 0988US4327368ACMOS Transistor pair with reverse biased substrate to prevent latch-upTOKYO SHIBAURA ELECTRIC CO·Filed 1979·Granted Apr 27, 1982·35 cites·7 claims
- 1088US4122541ANon-volatile memory deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1976·Granted Oct 24, 1978·34 cites·4 claims
- 1187US4792834ASemiconductor memory device with buried layer under groove capacitorTOSHIBA KK·Filed 1988·Granted Dec 20, 1988·53 cites·4 claims
- 1286US4814853ASemiconductor device with programmable fuseTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Mar 21, 1989·60 cites·23 claims
- 1384US4479202ACMOS Sense amplifierTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Oct 23, 1984·38 cites·5 claims
- 1481US3950737ANonvolatile counter circuitTOKYO SHIBAURA ELECTRIC CO·Filed 1974·Granted Apr 13, 1976·31 cites·13 claims
- 1580US4697252ADynamic type semiconductor memory deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted Sep 29, 1987·27 cites·14 claims
- 1675US4011576ANonvolatile semiconductor memory devicesTOKYO SHIBAURA ELECTRIC CO·Filed 1975·Granted Mar 8, 1977·19 cites·6 claims
- 1774US4641165ADynamic memory device with an RC circuit for inhibiting the effects of alpha particle radiationTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Feb 3, 1987·21 cites·20 claims
- 1868US4453234ANonvolatile semiconductor memory deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Jun 5, 1984·20 cites·18 claims
- 1967US4723155ASemiconductor device having a programmable fuse elementTOKYO SHIBAURA ELECTRIC CO·Filed 1986·Granted Feb 2, 1988·33 cites·9 claims
- 2064US4122531AMemory and control circuit for the memoryTOKYO SHIBAURA ELECTRIC CO·Filed 1976·Granted Oct 24, 1978·13 cites·13 claims
- 2163US4168537ANonvolatile memory system enabling nonvolatile data transfer during power onTOKYO SHIBAURA ELECTRIC CO·Filed 1977·Granted Sep 18, 1979·10 cites·11 claims
- 2262US4467452ANonvolatile semiconductor memory device and method of fabricating the sameTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Aug 21, 1984·16 cites·5 claims
- 2361US4489339ASOS MOSFET With self-aligned channel contactTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Dec 18, 1984·15 cites·9 claims
- 2459US4287574AMemory cell with non-volatile memory elementsTOKYO SHIBAURA ELECTRIC CO·Filed 1979·Granted Sep 1, 1981·8 cites·26 claims
- 2553US4794571ADynamic read-write random access memoryTOSHIBA KK·Filed 1988·Granted Dec 27, 1988·13 cites·19 claims
- 2650US4484209ASOS Mosfet with thinned channel contact regionTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Nov 20, 1984·10 cites·17 claims
- 2748US5428236ASemiconductor memory device having trenched capicitorTOSHIBA KK·Filed 1992·Granted Jun 27, 1995·13 cites·5 claims
- 2848US4123771ANonvolatile semiconductor memoryTOKYO SHIBAURA ELECTRIC CO·Filed 1976·Granted Oct 31, 1978·7 cites·2 claims
- 2946US5185567APower circuit for an LSITOSHIBA KK·Filed 1991·Granted Feb 9, 1993·9 cites·10 claims
- 3046US4710905ASemiconductor memory deviceTOSHIBA KK·Filed 1986·Granted Dec 1, 1987·9 cites·6 claims
- 3134US4236170AGate controlled negative resistance semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1979·Granted Nov 25, 1980·2 cites·10 claims
- 3233US4970688AMemory device having operating functionTOSHIBA KK·Filed 1989·Granted Nov 13, 1990·5 cites·14 claims
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