Inventor · disambiguated record
Francis J. Kub
Also filed as: KUB FRANCIS · KUB FRANCIS J · KUB FRANCIS JOHN
100 granted patents·19 pending applications·3,515 citations·filing 1977–2025
99Inventor score
Top patents by PatentIndex Score
119 records- 0198US6323108B1Fabrication ultra-thin bonded semiconductor layersUS NAVY·Filed 1999·Granted Nov 27, 2001·391 cites·48 claims
- 0298US6242324B1Method for fabricating singe crystal materials over CMOS devicesUS NAVY·Filed 1999·Granted Jun 5, 2001·552 cites·47 claims
- 0398US6153495AAdvanced methods for making semiconductor devices by low temperature direct bondingINTERSIL CORP·Filed 1998·Granted Nov 28, 2000·516 cites·83 claims
- 0497US9246305B1Light-emitting devices with integrated diamondKUB FRANCIS J·Filed 2015·Granted Jan 26, 2016·15 cites·12 claims
- 0597US5013681AMethod of producing a thin silicon-on-insulator layerUS NAVY·Filed 1989·Granted May 7, 1991·396 cites·19 claims
- 0696US7358152B2Wafer bonding of thinned electronic materials and circuits to high performance substrateUS NAVY·Filed 2005·Granted Apr 15, 2008·33 cites·25 claims
- 0796US6497763B2Electronic device with composite substrateUS NAVY·Filed 2001·Granted Dec 24, 2002·143 cites·40 claims
- 0896US6328796B1Single-crystal material on non-single-crystalline substrateUS NAVY·Filed 1999·Granted Dec 11, 2001·280 cites·37 claims
- 0995US8900939B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlKUB FRANCIS J·Filed 2014·Granted Dec 2, 2014·17 cites·5 claims
- 1094US9006791B2III-nitride P-channel field effect transistor with hole carriers in the channelKUB FRANCIS J·Filed 2014·Granted Apr 14, 2015·12 cites·15 claims
- 1194US8384129B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlUS NAVY·Filed 2010·Granted Feb 26, 2013·19 cites·25 claims
- 1294US8039301B2Gate after diamond transistorUS NAVY·Filed 2008·Granted Oct 18, 2011·28 cites·17 claims
- 1394US6593212B1Method for making electro-optical devices using a hydrogenion splitting techniqueUS NAVY·Filed 2001·Granted Jul 15, 2003·102 cites·26 claims
- 1493US9543168B2Defects annealing and impurities activation in semiconductors at thermodynamically non-stable conditionsUS NAVY·Filed 2016·Granted Jan 10, 2017·11 cites·30 claims
- 1593US8872159B2Graphene on semiconductor detectorKUB FRANCIS J·Filed 2012·Granted Oct 28, 2014·8 cites·29 claims
- 1693US8753468B2Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substratesCALDWELL JOSHUA D·Filed 2010·Granted Jun 17, 2014·30 cites·6 claims
- 1792US11996840B1Light controlled switch moduleUS GOV SEC NAVY·Filed 2023·Granted May 28, 2024·2 cites·20 claims
- 1892US9196614B2Inverted III-nitride P-channel field effect transistor with hole carriers in the channelKUB FRANCIS J·Filed 2015·Granted Nov 24, 2015·7 cites·15 claims
- 1991US10317210B2Whole angle MEMS gyroscope on hexagonal crystal substrateCHARLES STARK DRAPER LABORATORY INC·Filed 2016·Granted Jun 11, 2019·9 cites·32 claims
- 2091US8518808B2Defects annealing and impurities activation in III-nitride compoundFEIGELSON BORIS N·Filed 2011·Granted Aug 27, 2013·17 cites·37 claims
- 2191US8501531B2Method of forming graphene on a surfaceKUB FRANCIS J·Filed 2012·Granted Aug 6, 2013·10 cites·12 claims
- 2291US8254086B2Two-step synthesis of manganese oxide nanostructures on carbon for supercapacitor applicationsMASTRO MICHAEL A·Filed 2010·Granted Aug 28, 2012·10 cites·13 claims
- 2391US6767749B2Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splittingUS NAVY·Filed 2002·Granted Jul 27, 2004·70 cites·20 claims
- 2490US9014221B2Infrared laserKUB FRANCIS J·Filed 2012·Granted Apr 21, 2015·8 cites·5 claims
- 2589US7282753B2Vertical conducting power semiconducting devices made by deep reactive ion etchingUS NAVY·Filed 2006·Granted Oct 16, 2007·15 cites·6 claims
- 2689US6274892B1Devices formable by low temperature direct bondingINTERSIL INC·Filed 1998·Granted Aug 14, 2001·101 cites·10 claims
- 2788US10513462B2Transparent nanocomposite ceramics built from core/shell nanoparticlesUS GOV SEC NAVY·Filed 2016·Granted Dec 24, 2019·5 cites·23 claims
- 2888US9099375B2Diamond and diamond composite materialKUB FRANCIS J·Filed 2013·Granted Aug 4, 2015·10 cites·23 claims
- 2988US7759186B2Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devicesUS NAVY·Filed 2009·Granted Jul 20, 2010·14 cites·26 claims
- 3088US7132321B2Vertical conducting power semiconductor devices implemented by deep etchUS NAVY·Filed 2002·Granted Nov 7, 2006·42 cites·11 claims
- 3188US6607969B1Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniquesUS NAVY·Filed 2002·Granted Aug 19, 2003·55 cites·1 claims
- 3288US6201342B1Automatically sharp field emission cathodesUS NAVY·Filed 1997·Granted Mar 13, 2001·52 cites·13 claims
- 3387US9685513B2Semiconductor structure or device integrated with diamondKUB FRANCIS J·Filed 2013·Granted Jun 20, 2017·9 cites·20 claims
- 3486US9327982B2Method of forming graphene on a surfaceKUB FRANCIS J·Filed 2013·Granted May 3, 2016·6 cites·8 claims
- 3586US9111786B1Complementary field effect transistors using gallium polar and nitrogen polar III-nitride materialKUB FRANCIS J·Filed 2014·Granted Aug 18, 2015·4 cites·8 claims
- 3686US9029833B2Graphene on semiconductor detectorKUB FRANCIS J·Filed 2014·Granted May 12, 2015·3 cites·15 claims
- 3786US8647918B2Formation of graphene on a surfaceKUB FRANCIS J·Filed 2013·Granted Feb 11, 2014·6 cites·14 claims
- 3886US7535100B2Wafer bonding of thinned electronic materials and circuits to high performance substratesUS NAVY·Filed 2003·Granted May 19, 2009·31 cites·14 claims
- 3986US4319261ASelf-aligned, field aiding double polysilicon CCD electrode structureWESTINGHOUSE ELECTRIC CORP·Filed 1980·Granted Mar 9, 1982·42 cites·11 claims
- 4085US10343900B2Material structure and method for deep silicon carbide etchingUS GOV SEC NAVY·Filed 2017·Granted Jul 9, 2019·3 cites·17 claims
- 4185US9236432B2Graphene base transistor with reduced collector areaKUB FRANCIS J·Filed 2014·Granted Jan 12, 2016·6 cites·14 claims
- 4285US9018056B2Complementary field effect transistors using gallium polar and nitrogen polar III-nitride materialKUB FRANCIS J·Filed 2014·Granted Apr 28, 2015·4 cites·5 claims
- 4385US8648390B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlKUB FRANCIS J·Filed 2013·Granted Feb 11, 2014·6 cites·31 claims
- 4485US4131902ANovel bipolar transistor with a dual-dielectric tunnel emitterWESTINGHOUSE ELECTRIC CORP·Filed 1977·Granted Dec 26, 1978·29 cites·30 claims
- 4584US7902513B2Neutron detector with gamma ray isolationUS NAVY·Filed 2009·Granted Mar 8, 2011·14 cites·25 claims
- 4684US6194290B1Methods for making semiconductor devices by low temperature direct bondingINTERSIL CORP·Filed 1998·Granted Feb 27, 2001·74 cites·35 claims
- 4784US6113451AAtomically sharp field emission cathodesUS NAVY·Filed 1999·Granted Sep 5, 2000·38 cites·8 claims
- 4883US8679248B2GaN whiskers and methods of growing them from solutionFEIGELSON BORIS N·Filed 2010·Granted Mar 25, 2014·2 cites·9 claims
- 4981US9396941B2Method for vertical and lateral control of III-N polarityHITE JENNIFER K·Filed 2011·Granted Jul 19, 2016·7 cites·9 claims
- 5081US9059565B1Ring cavity laser deviceKUB FRANCIS J·Filed 2015·Granted Jun 16, 2015·2 cites·8 claims
Showing the top 50 of 119 patent records by PatentIndex Score.
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