Inventor · disambiguated record
Masanobu Tsuchitani
Also filed as: TSUCHITANI MASANOBU
21 granted patents·9 pending applications·572 citations·filing 1995–2019
95Inventor score
Top patents by PatentIndex Score
30 records- 0193US7541642B2Semiconductor device with a gate electrode including a pair of polysilicon layersTOSHIBA KK·Filed 2005·Granted Jun 2, 2009·34 cites·9 claims
- 0292US9865680B2Semiconductor device with peripheral void space and method of making the sameTOSHIBA KK·Filed 2016·Granted Jan 9, 2018·9 cites·20 claims
- 0392US5578508AVertical power MOSFET and process of fabricating the sameTOSHIBA KK·Filed 1995·Granted Nov 26, 1996·135 cites·9 claims
- 0490US6239464B1Semiconductor gate trench with covered open endsTOSHIBA KK·Filed 1999·Granted May 29, 2001·86 cites·3 claims
- 0590US6060747ASemiconductor deviceTOSHIBA KK·Filed 1998·Granted May 9, 2000·80 cites·17 claims
- 0687US7420245B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Sep 2, 2008·12 cites·12 claims
- 0785US7772641B2Power semiconductor device with a plurality of gate electrodesTOSHIBA KK·Filed 2007·Granted Aug 10, 2010·15 cites·8 claims
- 0885US6429501B1Semiconductor device having high breakdown voltage and method for manufacturing the deviceTOSHIBA KK·Filed 2000·Granted Aug 6, 2002·40 cites·14 claims
- 0984US5770514AMethod for manufacturing a vertical transistor having a trench gateTOSHIBA KK·Filed 1997·Granted Jun 23, 1998·59 cites·1 claims
- 1083US6995426B2Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity typeTOSHIBA KK·Filed 2002·Granted Feb 7, 2006·27 cites·16 claims
- 1183US6337498B1Semiconductor device having directionally balanced gates and manufacturing methodTOSHIBA KK·Filed 1999·Granted Jan 8, 2002·50 cites·5 claims
- 1277US10872958B2Semiconductor deviceTOSHIBA KK·Filed 2019·Granted Dec 22, 2020·2 cites·11 claims
- 1365US7906416B2Method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2007·Granted Mar 15, 2011·2 cites·9 claims
- 1463US7423315B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2005·Granted Sep 9, 2008·3 cites·20 claims
- 1558US7262477B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted Aug 28, 2007·6 cites·26 claims
- 1655US7507630B2Method of fabricating a semiconductor deviceTOSHIBA KK·Filed 2005·Granted Mar 24, 2009·1 cites·6 claims
- 1748US2008296611A1Semiconductor device and method for manufacturing sameTOSHIBA KK·Filed 2007·Application pending·0 cites
- 1846US10020362B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2016·Granted Jul 10, 2018·0 cites·16 claims
- 1946US6222231B1Semiconductor device of high breakdown voltage using semiconductive film and its manufacturing methodTOSHIBA KK·Filed 2000·Granted Apr 24, 2001·2 cites·6 claims
- 2045US2008299686A1Method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2007·Application pending·0 cites
- 2143US2010203688A1Semiconductor device and method for manufacturing sameTOSHIBA KK·Filed 2010·Application pending·0 cites
- 2243US2006145290A1Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity typeOKUMURA HIDEKI·Filed 2005·Application pending·0 cites
- 2338US6031276ASemiconductor device and method of manufacturing the same with stable control of lifetime carriersTOSHIBA KK·Filed 1997·Granted Feb 29, 2000·7 cites·5 claims
- 2438US2004016962A1Semiconductor deviceFiled 2003·Application pending·0 cites
- 2538US2006237786A1Power semiconductor deviceTOSHIBA KK·Filed 2006·Application pending·0 cites
- 2638US2006091453A1Trench MIS device and method for manufacturing trench MIS deviceTOSHIBA KK·Filed 2005·Application pending·0 cites
- 2737US10141399B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Nov 27, 2018·0 cites·20 claims
- 2837US2006043480A1Semiconductor device and fabrication method of the sameTOSHIBA KK·Filed 2004·Application pending·0 cites
- 2935US2005253190A1Semiconductor deviceTOSHIBA KK·Filed 2005·Application pending·0 cites
- 3031US6084263APower device having high breakdown voltage and method of manufacturing the sameTOSHIBA KK·Filed 1998·Granted Jul 4, 2000·2 cites·7 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →