Inventor · disambiguated record
Hideki Matsuhashi
Also filed as: MATSUHASHI HIDEKI
85 granted patents·1 pending application·184 citations·filing 1998–2019
99Inventor score
Top patents by PatentIndex Score
86 records- 0198US10593604B1Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cellsPDF SOLUTIONS INC·Filed 2016·Granted Mar 17, 2020·19 cites·19 claims
- 0298US9870962B1Integrated circuit including NCEM-enabled, interlayer overlap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gatesPDF SOLUTIONS INC·Filed 2017·Granted Jan 16, 2018·13 cites·19 claims
- 0398US9799575B2Integrated circuit containing DOEs of NCEM-enabled fill cellsPDF SOLUTIONS INC·Filed 2016·Granted Oct 24, 2017·19 cites·11 claims
- 0497US9805994B1Mesh-style NCEM pads, and process for making semiconductor dies, chips, and wafers using in-line measurements from such padsPDF SOLUTIONS INC·Filed 2016·Granted Oct 31, 2017·15 cites·18 claims
- 0597US9627370B1Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, GATE-short-configured, GATECNT-short-configured, and TS-short-configured, NCEM-enabled fill cellsPDF SOLUTIONS INC·Filed 2016·Granted Apr 18, 2017·15 cites·20 claims
- 0696US10978438B1IC with test structures and E-beam pads embedded within a contiguous standard cell areaPDF SOLUTIONS INC·Filed 2019·Granted Apr 13, 2021·9 cites·14 claims
- 0793US9741703B1Integrated circuit containing standard logic cells and ilbrary-compatible, NCEM-enabled fill cells, including at least via-open-configured, gate-short-configured, TS-short-configured, and AA-short-conigured, NCEM-enabled fill cellsPDF SOLUTIONS INC·Filed 2016·Granted Aug 22, 2017·4 cites·20 claims
- 0893US9691672B1Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, GATE-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cellsPDF SOLUTIONS INC·Filed 2017·Granted Jun 27, 2017·4 cites·20 claims
- 0993US9627371B1Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, GATE-short-configured, GATECNT-short-configured, and AA-short-configured, NCEM-enabled fill cellsPDF SOLUTIONS INC·Filed 2016·Granted Apr 18, 2017·7 cites·20 claims
- 1090US10199288B1Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one side-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective side-to-side short, corner short, and via open test areasPDF SOLUTIONS INC·Filed 2018·Granted Feb 5, 2019·2 cites·20 claims
- 1190US10199283B1Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stagePDF SOLUTIONS INC·Filed 2017·Granted Feb 5, 2019·3 cites·20 claims
- 1290US9905487B1Process for making semiconductor dies, chips, and wafers using non-contact measurements obtained from DOEs of NCEM-enabled fill cells on test wafers that include multiple means/steps for enabling NC detection of V0 via opensPDF SOLUTIONS INC·Filed 2016·Granted Feb 27, 2018·3 cites·10 claims
- 1389US9786648B1Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least chamfer-short-configured, AACNT-short-configured, GATECNT-short-configured, and TS-short-configured, NCEM-enabled fill cellsPDF SOLUTIONS INC·Filed 2016·Granted Oct 10, 2017·2 cites·20 claims
- 1489US9773773B1Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least chamfer-short-configured, AACNT-short-configured, GATE-short-configured, and GATECNT-short-configured, NCEM-enabled fill cellsPDF SOLUTIONS INC·Filed 2016·Granted Sep 26, 2017·2 cites·20 claims
- 1589US9761575B1Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least chamfer-short-configured, AACNT-short-configured, GATE-short-configured, and TS-short-configured, NCEM-enabled fill cellsPDF SOLUTIONS INC·Filed 2016·Granted Sep 12, 2017·2 cites·20 claims
- 1687US10290552B1Methods for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stagePDF SOLUTIONS INC·Filed 2018·Granted May 14, 2019·2 cites·20 claims
- 1787US10199294B1Method for processing a semiconductor wafer using non-contact electrical measurements indicative of a least one side-to-side short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective side-to-side short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stagePDF SOLUTIONS INC·Filed 2018·Granted Feb 5, 2019·1 cites·20 claims
- 1887US9761573B1Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATE-short-configured, and TS-short-configured, NCEM-enabled fill cellsPDF SOLUTIONS INC·Filed 2016·Granted Sep 12, 2017·2 cites·20 claims
- 1986US10096530B1Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cellsPDF SOLUTIONS INC·Filed 2017·Granted Oct 9, 2018·4 cites·14 claims
- 2085US9947601B1Integrated circuit including NCEM-enabled, side-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gatesPDF SOLUTIONS INC·Filed 2017·Granted Apr 17, 2018·1 cites·19 claims
- 2184US9922968B1Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including chamfer short configured fill cellsPDF SOLUTIONS INC·Filed 2017·Granted Mar 20, 2018·1 cites·23 claims
- 2284US9773774B1Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cellsPDF SOLUTIONS INC·Filed 2017·Granted Sep 26, 2017·4 cites·17 claims
- 2384US9721937B1Integrated circuit containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-tip short configured fill cellsPDF SOLUTIONS INC·Filed 2017·Granted Aug 1, 2017·1 cites·23 claims
- 2483US9653446B1Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, TS-short-configured, and AA-short-configured, NCEM-enabled fill cellsPDF SOLUTIONS INC·Filed 2016·Granted May 16, 2017·2 cites·20 claims
- 2580US9911649B1Process for making and using mesh-style NCEM padsPDF SOLUTIONS INC·Filed 2016·Granted Mar 6, 2018·2 cites·3 claims
- 2680US9728553B1Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATE-short-configured, and TS-short-configured, NCEM-enabled fill cellsPDF SOLUTIONS INC·Filed 2016·Granted Aug 8, 2017·1 cites·20 claims
- 2779US9831141B1Integrated circuit containing DOEs of GATE-snake-open-configured, NCEM-enabled fill cellsPDF SOLUTIONS INC·Filed 2016·Granted Nov 28, 2017·1 cites·20 claims
- 2879US9711421B1Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of GATE-snake-open-configured, NCEM-enabled fill cellsPDF SOLUTIONS INC·Filed 2016·Granted Jul 18, 2017·1 cites·20 claims
- 2976US9929063B1Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gatesPDF SOLUTIONS INC·Filed 2017·Granted Mar 27, 2018·2 cites·19 claims
- 3076US9768083B1Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cellsPDF SOLUTIONS INC·Filed 2017·Granted Sep 19, 2017·2 cites·16 claims
- 3176US9646961B1Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, TS-short-configured, and metal-short-configured, NCEM-enabled fill cellsPDF SOLUTIONS INC·Filed 2016·Granted May 9, 2017·1 cites·20 claims
- 3274US10199284B1Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one chamfer short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and chamfer short test areasPDF SOLUTIONS INC·Filed 2018·Granted Feb 5, 2019·0 cites·20 claims
- 3373US10109539B1Integrated circuit including NCEM-enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gatesPDF SOLUTIONS INC·Filed 2017·Granted Oct 23, 2018·0 cites·19 claims
- 3473US9922890B1Integrated circuit including NCEM-enabled, snake-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gatesPDF SOLUTIONS INC·Filed 2017·Granted Mar 20, 2018·0 cites·19 claims
- 3573US9911669B1Integrated circuit including NCEM-enabled, diagonal gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gatesPDF SOLUTIONS INC·Filed 2017·Granted Mar 6, 2018·0 cites·19 claims
- 3673US9911668B1Integrated circuit including NCEM-enabled, corner gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gatesPDF SOLUTIONS INC·Filed 2017·Granted Mar 6, 2018·0 cites·19 claims
- 3773US9911670B1Integrated circuit including NCEM-enabled, via-open/resistance-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gatePDF SOLUTIONS INC·Filed 2017·Granted Mar 6, 2018·0 cites·19 claims
- 3873US9899276B1Process for making an integrated circuit that includes NCEM-enabled, interlayer overlap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gatesPDF SOLUTIONS INC·Filed 2017·Granted Feb 20, 2018·0 cites·19 claims
- 3973US9881843B1Integrated circuit including NCEM-Enabled, tip-to-tip gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gatesPDF SOLUTIONS INC·Filed 2017·Granted Jan 30, 2018·0 cites·19 claims
- 4073US6919639B2Multiple copper vias for integrated circuit metallization and methods of fabricating sameUNIV TEXAS·Filed 2002·Granted Jul 19, 2005·18 cites·18 claims
- 4172US10269786B1Integrated circuit containing first and second DOEs of standard Cell Compatible, NCEM-enabled Fill Cells, with the first DOE including tip-to-side short configured fill cells, and the second DOE including corner short configured fill cellsPDF SOLUTIONS INC·Filed 2017·Granted Apr 23, 2019·0 cites·19 claims
- 4272US10211112B1Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and side-to-side short test areasPDF SOLUTIONS INC·Filed 2018·Granted Feb 19, 2019·0 cites·20 claims
- 4372US10199289B1Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one chamfer short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective chamfer short, corner short, and via open test areasPDF SOLUTIONS INC·Filed 2018·Granted Feb 5, 2019·0 cites·20 claims
- 4472US10199287B1Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and via open test areasPDF SOLUTIONS INC·Filed 2018·Granted Feb 5, 2019·0 cites·20 claims
- 4572US10096529B1Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including metal island open configured fill cellsPDF SOLUTIONS INC·Filed 2017·Granted Oct 9, 2018·0 cites·20 claims
- 4672US9929136B1Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-Enabled fill cells, with the first DOE including tip-to-side short configured fill cells, and the second DOE including chamfer short configured fill cellsPDF SOLUTIONS INC·Filed 2017·Granted Mar 27, 2018·0 cites·21 claims
- 4772US9871028B1Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including tip-to-tip short configured fill cells, and the second DOE including chamfer short configured fill cellsPDF SOLUTIONS INC·Filed 2017·Granted Jan 16, 2018·0 cites·20 claims
- 4872US9825018B1Integrated circuit containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including tip-to-tip short configured fill cells, and the second DOE including chamfer short configured fill cellsPDF SOLUTIONS INC·Filed 2017·Granted Nov 21, 2017·0 cites·16 claims
- 4972US9818738B1Integrated circuit containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells with first DOE including tip-to-side short configured fill cells and second DOE including chamfer short configured fill cellsPDF SOLUTIONS INC·Filed 2017·Granted Nov 14, 2017·0 cites·17 claims
- 5072US9818660B1Integrated circuit containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including metal island open configured fill cellsPDF SOLUTIONS INC·Filed 2017·Granted Nov 14, 2017·0 cites·16 claims
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