Inventor · disambiguated record
Venkatraman Prabhakar
Also filed as: PRABHAKAR VENKATRAMAN
56 granted patents·13 pending applications·550 citations·filing 1997–2025
98Inventor score
Files withCYPRESS SEMICONDUCTOR CORP30PRABHAKAR VENKATRAMAN13Longitude Flash Memory Solutions Ltd7MAXIM INTEGRATED PRODUCTS7Infineon Technologies LLC6
Top patents by PatentIndex Score
69 records- 0198US7324387B1Low power high density random access memory flash cells and arraysMAXIM INTEGRATED PRODUCTS·Filed 2007·Granted Jan 29, 2008·211 cites·24 claims
- 0297US8916432B1Methods to integrate SONOS into CMOS flowCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Dec 23, 2014·30 cites·20 claims
- 0396US8796098B1Embedded SONOS based memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Aug 5, 2014·19 cites·20 claims
- 0494US8953380B1Systems, methods, and apparatus for memory cells with common source linesCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Feb 10, 2015·14 cites·20 claims
- 0593US5869359AProcess for forming silicon on insulator devices having elevated source and drain regionsFiled 1997·Granted Feb 9, 1999·120 cites·18 claims
- 0692US9589652B1Asymmetric pass field-effect transistor for non-volatile memoryCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Mar 7, 2017·10 cites·18 claims
- 0792US8675405B1Method to reduce program disturbs in non-volatile memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Mar 18, 2014·11 cites·15 claims
- 0889US10062573B1Embedded SONOS with triple gate oxide and manufacturing method of the sameCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Aug 28, 2018·4 cites·10 claims
- 0989US9431124B2Method to reduce program disturbs in non-volatile memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Aug 30, 2016·7 cites·20 claims
- 1089US8947122B2Non-volatile latch structures with small area for FPGACYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Feb 3, 2015·8 cites·20 claims
- 1186US9356035B2Embedded SONOS based memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted May 31, 2016·5 cites·20 claims
- 1285US8988938B2Method to reduce program disturbs in non-volatile memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Mar 24, 2015·6 cites·20 claims
- 1383US9378821B1Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Jun 28, 2016·7 cites·14 claims
- 1481US2024339591A1Systems and methods involving use of nitrogen-containing plasma to treat lithium-ion cell cathode materialsPRABHAKAR VENKATRAMAN·Filed 2024·Application pending·0 cites
- 1580US7894257B1Low voltage low cost non-volatile memoryPRABHAKAR VENKATRAMAN·Filed 2008·Granted Feb 22, 2011·8 cites·18 claims
- 1678US9466374B2Systems, methods, and apparatus for memory cells with common source linesCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Oct 11, 2016·3 cites·20 claims
- 1777US10706937B2Asymmetric pass field-effect transistor for non-volatile memoryLongitude Flash Memory Solutions Ltd·Filed 2019·Granted Jul 7, 2020·1 cites·15 claims
- 1876US11810616B2Silicon-oxide-nitride-oxide-silicon multi-level non-volatile memory device and methods of fabrication thereofInfineon Technologies LLC·Filed 2022·Granted Nov 7, 2023·0 cites·18 claims
- 1976US7835179B1Non-volatile latch with low voltage operationPRABHAKAR VENKATRAMAN·Filed 2008·Granted Nov 16, 2010·9 cites·40 claims
- 2075US12183395B2Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile memory device and methods of operation thereofInfineon Technologies LLC·Filed 2022·Granted Dec 31, 2024·0 cites·22 claims
- 2175US10332599B2Bias scheme for word programming in non-volatile memory and inhibit disturb reductionLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Jun 25, 2019·3 cites·20 claims
- 2275US9922988B2Embedded SONOS based memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Mar 20, 2018·1 cites·20 claims
- 2374US10002878B2Complementary SONOS integration into CMOS flowCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Jun 19, 2018·1 cites·17 claims
- 2473US9847137B2Method to reduce program disturbs in non-volatile memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Dec 19, 2017·2 cites·20 claims
- 2573US9620516B2Embedded SONOS based memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Apr 11, 2017·1 cites·20 claims
- 2673US9355725B2Non-volatile memory and method of operating the sameCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted May 31, 2016·4 cites·11 claims
- 2771US12015142B2Methods involving use of nitrogen-containing plasma to treat liquid electrolyte lithium-ion cathode materialsPRABHAKAR VENKATRAMAN·Filed 2021·Granted Jun 18, 2024·0 cites·27 claims
- 2871US7535758B2One or multiple-times programmable deviceMAXIM INTEGRATED PRODUCTS·Filed 2007·Granted May 19, 2009·4 cites·17 claims
- 2969US6054386AProcess for forming silicon-on-insulator devices using a nitriding agentFiled 1997·Granted Apr 25, 2000·28 cites·33 claims
- 3069US2025252298A1Compute-in-memory devices, systems and methods of operation thereofInfineon Technologies LLC·Filed 2025·Application pending·0 cites
- 3168US11355185B2Silicon-oxide-nitride-oxide-silicon multi-level non-volatile memory device and methods of fabrication thereofCYPRESS SEMICONDUCTOR CORP·Filed 2020·Granted Jun 7, 2022·0 cites·24 claims
- 3268US10262747B2Method to reduce program disturbs in non-volatile memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Apr 16, 2019·2 cites·20 claims
- 3368US9893172B2Methods to integrate SONOS into CMOS flowCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Feb 13, 2018·1 cites·17 claims
- 3467US12242949B2Compute-in-memory devices, systems and methods of operation thereofInfineon Technologies LLC·Filed 2021·Granted Mar 4, 2025·0 cites·19 claims
- 3567US8897067B2Nonvolatile memory cells and methods of making such cellsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Nov 25, 2014·2 cites·7 claims
- 3667US7944750B1Multi-programmable non-volatile memory cellMAXIM INTEGRATED PRODUCTS·Filed 2008·Granted May 17, 2011·7 cites·21 claims
- 3767US7791955B2Method of erasing a block of memory cellsMAXIM INTEGRATED PRODUCTS·Filed 2008·Granted Sep 7, 2010·4 cites·12 claims
- 3865US11361826B2Asymmetric pass field-effect transistor for nonvolatile memoryLONGITDUE FLASH MEMORY SOLUTIONS LTD·Filed 2020·Granted Jun 14, 2022·0 cites·12 claims
- 3965US10020060B2Asymmetric pass field-effect transistor for nonvolatile memoryCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Jul 10, 2018·1 cites·20 claims
- 4065US8576633B21T smart writePRABHAKAR VENKATRAMAN·Filed 2011·Granted Nov 5, 2013·3 cites·19 claims
- 4165US7436710B2EEPROM memory device with cell having NMOS in a P pocket as a control gate, PMOS program/erase transistor, and PMOS access transistor in a common wellMAXIM INTEGRATED PRODUCTS·Filed 2007·Granted Oct 14, 2008·4 cites·15 claims
- 4265US2021074821A1Embedded sonos with triple gate oxide and manufacturing method of the sameLongitude Flash Memory Solutions Ltd·Filed 2020·Application pending·0 cites
- 4364US12469838B2Systems and methods involving use of nitrogen-containing plasma to treat lithium iron phosphate cathodesPRABHAKAR VENKATRAMAN·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 4463US8629436B2Backside only contact thin-film solar cells and devices, systems and methods of fabricating same, and products produced by processes thereofPRABHAKAR VENKATRAMAN·Filed 2010·Granted Jan 14, 2014·1 cites·19 claims
- 4561US10784356B2Embedded sonos with triple gate oxide and manufacturing method of the sameLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Sep 22, 2020·0 cites·16 claims
- 4661US7835184B2EEPROM memory cell with first-dopant-type control gate transister, and second-dopant type program/erase and access transistors formed in common wellMAXIM INTEGRATED PRODUCTS·Filed 2008·Granted Nov 16, 2010·3 cites·24 claims
- 4760US9747987B1Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Aug 29, 2017·1 cites·20 claims
- 4860US8361890B2Systems, methods and materials including crystallization of substrates via sub-melt laser anneal, as well as products produced by such processesGIGASI SOLAR INC·Filed 2010·Granted Jan 29, 2013·1 cites·17 claims
- 4954US2015200295A1Drain Extended MOS Transistors With Split ChannelCYPRESS SEMICONDUCTOR CORP·Filed 2014·Application pending·0 cites
- 5053US9997528B2Complimentary SONOS integration into CMOS flowCYPRESS SEMICONDUTOR CORP·Filed 2016·Granted Jun 12, 2018·0 cites·21 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
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