Inventor · disambiguated record
Fred Alokozai
Also filed as: ALOKOZAI FRED
17 granted patents·3 pending applications·5,160 citations·filing 2012–2023
97Inventor score
Top patents by PatentIndex Score
20 records- 0199US10023960B2Process gas management for an inductively-coupled plasma deposition reactorASM IP HOLDING BV·Filed 2017·Granted Jul 17, 2018·467 cites·7 claims
- 0299US9605342B2Process gas management for an inductively-coupled plasma deposition reactorASM IP HOLDING BV·Filed 2015·Granted Mar 28, 2017·479 cites·17 claims
- 0399US9412564B2Semiconductor reaction chamber with plasma capabilitiesASM IP HOLDING BV·Filed 2015·Granted Aug 9, 2016·496 cites·22 claims
- 0499US9029253B2Phase-stabilized thin films, structures and devices including the thin films, and methods of forming sameASM IP HOLDING BV·Filed 2013·Granted May 12, 2015·531 cites·11 claims
- 0599US9018111B2Semiconductor reaction chamber with plasma capabilitiesASM IP HOLDING BV·Filed 2013·Granted Apr 28, 2015·532 cites·22 claims
- 0698US9299595B2Susceptor heater and method of heating a substrateASM IP HOLDING BV·Filed 2014·Granted Mar 29, 2016·506 cites·22 claims
- 0798US9005539B2Chamber sealing memberASM IP HOLDING BV·Filed 2012·Granted Apr 14, 2015·547 cites·23 claims
- 0898US8933375B2Susceptor heater and method of heating a substrateDUNN TODD·Filed 2012·Granted Jan 13, 2015·517 cites·26 claims
- 0997US9340874B2Chamber sealing memberASM IP HOLDING BV·Filed 2015·Granted May 17, 2016·19 cites·23 claims
- 1097US9228259B2Method for treatment of deposition reactorASM IP HOLDING BV·Filed 2014·Granted Jan 5, 2016·515 cites·14 claims
- 1197US9021985B2Process gas management for an inductively-coupled plasma deposition reactorALOKOZAI FRED·Filed 2012·Granted May 5, 2015·529 cites·16 claims
- 1296US11976361B2Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatusASM IP HOLDING BV·Filed 2022·Granted May 7, 2024·2 cites·14 claims
- 1395US11306395B2Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatusASM IP HOLDING BV·Filed 2017·Granted Apr 19, 2022·7 cites·14 claims
- 1491US8894870B2Multi-step method and apparatus for etching compounds containing a metalASM IP HOLDING BV·Filed 2013·Granted Nov 25, 2014·9 cites·20 claims
- 1586US10714350B2Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structuresASM IP HOLDING BV·Filed 2017·Granted Jul 14, 2020·4 cites·20 claims
- 1674US2024030035A1Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structuresASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 1766US11810788B2Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structuresASM IP HOLDING BV·Filed 2020·Granted Nov 7, 2023·0 cites·23 claims
- 1865US11967488B2Method for treatment of deposition reactorASM IP HOLDING BV·Filed 2022·Granted Apr 23, 2024·0 cites·19 claims
- 1949US2016115590A1Method and system for treatment of deposition reactorASM IP HOLDING BV·Filed 2016·Application pending·0 cites
- 2046US2016376700A1System for treatment of deposition reactorASM IP HOLDING BV·Filed 2016·Application pending·0 cites
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