Inventor · disambiguated record
Je-Min Park
Also filed as: PARK JE-MIN
83 granted patents·11 pending applications·631 citations·filing 2003–2023
99Inventor score
Top patents by PatentIndex Score
94 records- 0196US8344517B2Integrated circuit devices including air spacers separating conductive structures and contact plugs and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jan 1, 2013·35 cites·21 claims
- 0296US7094660B2Method of manufacturing trench capacitor utilizing stabilizing member to support adjacent storage electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 22, 2006·22 cites·12 claims
- 0395US8198189B2Methods of fabricating integrated circuit devices including air spacers separating conductive structures and contact plugsKIM DAE-IK·Filed 2010·Granted Jun 12, 2012·33 cites·13 claims
- 0494US10373961B2Semiconductor device including contact structureSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 6, 2019·10 cites·18 claims
- 0594US7183603B2Semiconductor device including square type storage node and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 27, 2007·37 cites·35 claims
- 0692US9064731B2Semiconductor device having landing padsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 23, 2015·13 cites·20 claims
- 0791US10886277B2Methods of manufacturing devices including a buried gate cell and a bit line structure including a thermal oxide buffer patternSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 5, 2021·7 cites·9 claims
- 0891US10679997B2Semiconductor device comprising work function metal pattern in boundary region and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 9, 2020·5 cites·18 claims
- 0990US6991980B2Methods of manufacturing multi-layer integrated circuit capacitor electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 31, 2006·44 cites·14 claims
- 1090US6784479B2Multi-layer integrated circuit capacitor electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 31, 2004·45 cites·16 claims
- 1189US10998324B2Semiconductor device comprising work function metal pattern in boundary region and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 4, 2021·2 cites·20 claims
- 1289US10896967B2Integrated circuit device including gate spacer structureSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 19, 2021·5 cites·20 claims
- 1389US10332831B2Semiconductor device including a bit lineSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 25, 2019·7 cites·14 claims
- 1489US9576902B2Semiconductor device including landing padSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 21, 2017·5 cites·8 claims
- 1588US10541302B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 21, 2020·7 cites·22 claims
- 1688US9559103B2Memory device including selectively disposed landing pads expanded over signal lineSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 31, 2017·6 cites·20 claims
- 1788US8668529B2Contact terminalPARK JE-MIN·Filed 2012·Granted Mar 11, 2014·19 cites·19 claims
- 1887US7361591B2Method of fabricating semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 22, 2008·10 cites·12 claims
- 1986US9318369B2Patterns of a semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 19, 2016·7 cites·20 claims
- 2085US9437560B2Semiconductor device including landing padSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 6, 2016·4 cites·11 claims
- 2184US9570510B2Magnetoresistive random access memory devices and methods of manufacturing the sameKIM EUN-JUNG·Filed 2015·Granted Feb 14, 2017·6 cites·20 claims
- 2284US7977724B2Capacitor and method of manufacturing the same comprising a stabilizing memberSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 12, 2011·9 cites·5 claims
- 2384US7300841B2Capacitor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 27, 2007·9 cites·17 claims
- 2483US7749834B2Method of fabricating semiconductor devices having buried contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 6, 2010·16 cites·24 claims
- 2582US10141316B2Semiconductor device with pillar and background patterns and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 27, 2018·4 cites·20 claims
- 2681US7476584B2Method of fabricating a semiconductor device with a bit line contact plugSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 13, 2009·10 cites·26 claims
- 2780US10332894B2Semiconductor device comprising work function metal pattern in boundry region and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 25, 2019·2 cites·19 claims
- 2880US9391202B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 12, 2016·4 cites·20 claims
- 2980US7575971B2Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 18, 2009·7 cites·25 claims
- 3080US7176552B2Semiconductor memory device having a decoupling capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 13, 2007·8 cites·15 claims
- 3179US12238921B2Semiconductor memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 3279US10325802B2Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 18, 2019·3 cites·20 claims
- 3378US9337151B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 10, 2016·4 cites·16 claims
- 3478US7446043B2Contact structure having silicide layers, semiconductor device employing the same, and methods of fabricating the contact structure and semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 4, 2008·8 cites·24 claims
- 3578US6929999B2Method of manufacturing semiconductor device with contact body extending in direction of bit line to contact storage nodeSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 16, 2005·25 cites·25 claims
- 3677US9196620B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 24, 2015·4 cites·10 claims
- 3776US7452769B2Semiconductor device including an improved capacitor and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 18, 2008·3 cites·2 claims
- 3875US10522550B2Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 31, 2019·2 cites·17 claims
- 3975US7078292B2Storage node contact forming method and structure for use in semiconductor memorySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 18, 2006·20 cites·24 claims
- 4074US9461051B2Methods of forming electronic devices having pads using first and second masksPARK JE-MIN·Filed 2015·Granted Oct 4, 2016·2 cites·22 claims
- 4174US6852620B2Semiconductor device with self-aligned junction contact hole and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 8, 2005·17 cites·30 claims
- 4272US10784266B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 22, 2020·1 cites·20 claims
- 4372US7126180B2Semiconductor device including a capacitor having improved structural stability and enhanced capacitance, and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 24, 2006·13 cites·17 claims
- 4471US12317467B2Semiconductor device comprising work function metal pattern in boundary region and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 27, 2025·0 cites·20 claims
- 4571US7247906B2Semiconductor devices having DRAM cells and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 24, 2007·4 cites·8 claims
- 4671US6977197B2Semiconductor devices having DRAM cells and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 20, 2005·14 cites·7 claims
- 4771US6709972B2Methods for fabricating semiconductor devices by forming grooves across alternating elongated regionsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 23, 2004·17 cites·24 claims
- 4870US9570409B2Semiconductor device and method of manufacturing the samePARK JE-MIN·Filed 2014·Granted Feb 14, 2017·3 cites·19 claims
- 4969US7247537B2Semiconductor device including an improved capacitor and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 24, 2007·8 cites·14 claims
- 5068US10128252B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 13, 2018·1 cites·17 claims
Showing the top 50 of 94 patent records by PatentIndex Score.
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