Inventor · disambiguated record
Jean-Pierre Faurie
Also filed as: FAURIE JEAN-PIERRE
21 granted patents·3 pending applications·153 citations·filing 2001–2019
93Inventor score
Files withFAURIE JEAN-PIERRE6LUMILOG4SAINT GOBAIN LUMILOG4BEAUMONT BERNARD3SAINT GOBAIN CRISTAUX ET DETECTEURS3
Top patents by PatentIndex Score
24 records- 0192US7118929B2Process for producing an epitaxial layer of gallium nitrideLUMILOG·Filed 2003·Granted Oct 10, 2006·53 cites·10 claims
- 0287US9012306B2Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereofBEAUMONT BERNARD·Filed 2011·Granted Apr 21, 2015·9 cites·19 claims
- 0381US6657194B2Multispectral monolithic infrared focal plane array detectorsEPIR TECHNOLOGIES INC·Filed 2001·Granted Dec 2, 2003·40 cites·11 claims
- 0477US8283239B2Process for growth of low dislocation density GaNBEAUMONT BERNARD·Filed 2006·Granted Oct 9, 2012·8 cites·17 claims
- 0577US7560296B2Process for producing an epitalixal layer of galium nitrideLUMILOG·Filed 2006·Granted Jul 14, 2009·5 cites·18 claims
- 0674US7445673B2Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereofLUMILOG·Filed 2004·Granted Nov 4, 2008·18 cites·24 claims
- 0770US8916456B2Group III-V substrate material with particular crystallographic featuresFAURIE JEAN-PIERRE·Filed 2012·Granted Dec 23, 2014·2 cites·20 claims
- 0869US9209018B2Semiconductor substrate and method of manufacturingBEAUMONT BERNARD·Filed 2012·Granted Dec 8, 2015·2 cites·19 claims
- 0968US10043662B2Method of forming semiconductor substrateFAURIE JEAN PIERRE·Filed 2012·Granted Aug 7, 2018·2 cites·19 claims
- 1067US8030101B2Process for producing an epitaxial layer of galium nitrideSAINT GOBAIN CRISTAUX ET DETECTEURS·Filed 2009·Granted Oct 4, 2011·2 cites·27 claims
- 1163US9312129B2Group III-V substrate material with particular crystallographic features and methods of makingFAURIE JEAN-PIERRE·Filed 2013·Granted Apr 12, 2016·1 cites·20 claims
- 1263US7455729B2Method for producing by vapour-phase epitaxy a gallium nitride film with low defect densityLUMILOG·Filed 2003·Granted Nov 25, 2008·9 cites·17 claims
- 1357US9064685B2Semiconductor substrate and method of formingSAINT GOBAIN CRISTAUX ET DETECTEURS·Filed 2014·Granted Jun 23, 2015·0 cites·20 claims
- 1456US10497833B2Semiconductor material including different crystalline orientation zones and related production processSAINT GOBAIN LUMILOG·Filed 2018·Granted Dec 3, 2019·0 cites·27 claims
- 1554US9882087B2Semiconductor material including different crystalline orientation zones and related production processSAINT-GOBAIN LUMILOG·Filed 2014·Granted Jan 30, 2018·0 cites·18 claims
- 1652US8557042B2Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrateAUJOL ERIC·Filed 2006·Granted Oct 15, 2013·2 cites·16 claims
- 1749US9130120B2Group III-V substrate material with thin buffer layer and methods of makingSAINT GOBAIN CRISTAUX ET DETECTEURS·Filed 2013·Granted Sep 8, 2015·0 cites·20 claims
- 1849US8921210B2Semiconductor substrate and method of formingFAURIE JEAN-PIERRE·Filed 2012·Granted Dec 30, 2014·0 cites·20 claims
- 1949US2013118408A1System for use in the formation of semiconductor crystalline materialsFAURIE JEAN-PIERRE·Filed 2012·Application pending·0 cites
- 2045US9318314B2Method of forming a freestanding semiconductor waferFAURIE JEAN-PIERRE·Filed 2013·Granted Apr 19, 2016·0 cites·20 claims
- 2141US11990335B2N-CO-doped semiconductor substrateIVWORKS CO LTD·Filed 2019·Granted May 21, 2024·0 cites·14 claims
- 2235US2020381249A1Method for fabricating a semiconductor substrateSAINT GOBAIN LUMILOG·Filed 2017·Application pending·0 cites
- 2333US10181399B2Method for manufacturing a wafer of semiconducting material based on a group 13 element nitrideSAINT GOBAIN LUMILOG·Filed 2015·Granted Jan 15, 2019·0 cites·11 claims
- 2429US2003102432A1Monolithic infrared focal plane array detectorsEPIR LTD·Filed 2001·Application pending·0 cites
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