Inventor · disambiguated record
Hiromitsu Hada
Also filed as: HADA HIROMITSU
23 granted patents·504 citations·filing 1995–2016
96Inventor score
Top patents by PatentIndex Score
23 records- 0196US9406877B2Semiconductor device and method of manufacturing the sameTADA MUNEHIRO·Filed 2010·Granted Aug 2, 2016·23 cites·26 claims
- 0296US5753555AMethod for forming semiconductor deviceNEC CORP·Filed 1996·Granted May 19, 1998·184 cites·22 claims
- 0393US6030894AMethod for manufacturing a semiconductor device having contact plug made of Si/SiGe/SiNEC CORP·Filed 1998·Granted Feb 29, 2000·131 cites·7 claims
- 0488US8536629B2Semiconductor device and method for manufacturing the sameTADA MUNEHIRO·Filed 2010·Granted Sep 17, 2013·9 cites·35 claims
- 0586US9245789B2Method for forming wiringNEC CORP·Filed 2013·Granted Jan 26, 2016·7 cites·10 claims
- 0685US9029825B2Semiconductor device and manufacturing method for semiconductor deviceTADA MUNEHIRO·Filed 2011·Granted May 12, 2015·8 cites·18 claims
- 0783US9059028B2Semiconductor device and method for manufacturing sameTADA MUNEHIRO·Filed 2010·Granted Jun 16, 2015·5 cites·16 claims
- 0882US8796659B2Variable resistance element, semiconductor device including variable resistance element, and methods for manufacturing variable resistance element and semiconductor deviceTADA MUNEHIRO·Filed 2011·Granted Aug 5, 2014·2 cites·20 claims
- 0978US8946672B2Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change elementTADA MUNEHIRO·Filed 2010·Granted Feb 3, 2015·3 cites·10 claims
- 1077US8816312B2Semiconductor deviceTADA MUNEHIRO·Filed 2011·Granted Aug 26, 2014·6 cites·20 claims
- 1176US9231207B2Method for forming resistance changing element capable of operating at low voltageNEC CORP·Filed 2014·Granted Jan 5, 2016·2 cites·9 claims
- 1273US5909059ASemiconductor device having contact plug and method for manufacturing the sameNEC CORP·Filed 1997·Granted Jun 1, 1999·37 cites·8 claims
- 1367US9754998B2Semiconductor device and operation method for sameNEC CORP·Filed 2015·Granted Sep 5, 2017·2 cites·17 claims
- 1465US5895948ASemiconductor device and fabrication process thereofNEC CORP·Filed 1997·Granted Apr 20, 1999·32 cites·14 claims
- 1558US8946668B2Semiconductor device and method of manufacturing the sameSAITO YUKISHIGE·Filed 2011·Granted Feb 3, 2015·2 cites·17 claims
- 1655US9059082B2Semiconductor device and operation method for sameTADA MUNEHIRO·Filed 2011·Granted Jun 16, 2015·1 cites·20 claims
- 1753US5640097ATest pattern for separately determining plug resistance and interfactial resistanceNEC CORP·Filed 1996·Granted Jun 17, 1997·16 cites·6 claims
- 1852US9059402B2Resistance-variable element and method for manufacturing the sameTADA MUNEHIRO·Filed 2010·Granted Jun 16, 2015·1 cites·6 claims
- 1948US10256400B2Semiconductor device and method of manufacturing the sameTADA MUNEHIRO·Filed 2016·Granted Apr 9, 2019·0 cites·12 claims
- 2046US5663651AMethod of separately determining plug resistor and interfacial resistor and test pattern for the sameNEC CORP·Filed 1995·Granted Sep 2, 1997·11 cites·5 claims
- 2144US5930675AProcess of forming inter-level connection without increase of contact resistanceNEC CORP·Filed 1996·Granted Jul 27, 1999·12 cites·8 claims
- 2237US5946570AProcess for fabricating semiconductor device having semiconductor layers epitaxially grown from active areas without short-circuit on field insulating layerNEC CORP·Filed 1997·Granted Aug 31, 1999·4 cites·12 claims
- 2336US5861653ASemiconductor device having gaseous isolating layer formed in inter-level insulating layer and process of fabrication thereofNEC CORP·Filed 1996·Granted Jan 19, 1999·6 cites·3 claims
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