P

Inventor

WILSON DENNIS R

US40 patents
⚠️ This page may combine multiple inventors who share the name “WILSON DENNIS R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RAMTRON INT CORP

17 patents
US5909624AJun 1, 1999

Method of making integration of high value capacitor with ferroelectric memory

RAMTRON INT CORP51 citations96
US5608246AMar 4, 1997

Integration of high value capacitor with ferroelectric memory

RAMTRON INT CORP82 citations96
US5598366AJan 28, 1997

Ferroelectric nonvolatile random access memory utilizing self-bootstrapping plate line segment drivers

RAMTRON INT CORP62 citations96
US6252793B1Jun 26, 2001

Reference cell configuration for a 1T/1C ferroelectric memory

RAMTRON INT CORP59 citations95
US5572459ANov 5, 1996

Voltage reference for a ferroelectric 1T/1C based memory

RAMTRON INT CORP108 citations95
US5880989AMar 9, 1999

Sensing methodology for a 1T/1C ferroelectric memory

RAMTRON INT CORP51 citations94
US6002634ADec 14, 1999

Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory

RAMTRON INT CORP20 citations93
US6560137B2May 6, 2003

Sense amplifier configuration for a 1T/1C ferroelectric memory

RAMTRON INT CORP24 citations92
US5774392AJun 30, 1998

Bootstrapping circuit utilizing a ferroelectric capacitor

RAMTRON INT CORP44 citations92
US5822237AOct 13, 1998

Voltage reference for a ferroelectric 1T/1C based memory

RAMTRON INT CORP32 citations90
US6856573B2Feb 15, 2005

Column decoder configuration for a 1T/1C memory

RAMTRON INT CORP15 citations88
US5892728AApr 6, 1999

Column decoder configuration for a 1T/1C ferroelectric memory

RAMTRON INT CORP20 citations88
US6060919AMay 9, 2000

CMOS preferred state power-up latch

RAMTRON INT CORP17 citations84
US5986919ANov 16, 1999

Reference cell configuration for a 1T/1C ferroelectric memory

RAMTRON INT CORP17 citations83
US5999461ADec 7, 1999

Low voltage bootstrapping circuit

RAMTRON INT CORP11 citations73
US5969980AOct 19, 1999

Sense amplifier configuration for a 1T/1C ferroelectric memory

RAMTRON INT CORP8 citations73
US5956266ASep 21, 1999

Reference cell for a 1T/1C ferroelectric memory

RAMTRON INT CORP16 citations73

CONOCO INC

10 patents

WILSON DENNIS R

5 patents

CONOCOPHILLIPS CO

4 patents

MOSTEK CORP

2 patents

US ENERGY

1 patent

COX JAMES C

1 patent