Inventor · disambiguated record
Danny E. Mars
Also filed as: MARS DANNY E
11 granted patents·2 pending applications·756 citations·filing 1993–2014
91Inventor score
Files withAGILENT TECHNOLOGIES INC4KIM JAMES C3AVAGO TECHNOLOGIES GENERAL IP1HEWLETT PACKARD CO1MARS DANNY E1
Top patents by PatentIndex Score
13 records- 0197US6155699AEfficient phosphor-conversion led structureAGILENT TECHNOLOGIES INC·Filed 1999·Granted Dec 5, 2000·536 cites·20 claims
- 0293US5805624ALong-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrateHEWLETT PACKARD CO·Filed 1996·Granted Sep 8, 1998·132 cites·12 claims
- 0389US7123638B2Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopantAVAGO TECHNOLOGIES GENERAL IP·Filed 2003·Granted Oct 17, 2006·39 cites·23 claims
- 0479US8476637B2Nanostructure optoelectronic device having sidewall electrical contactKIM JAMES C·Filed 2010·Granted Jul 2, 2013·6 cites·34 claims
- 0577US8431817B2Multi-junction solar cell having sidewall bi-layer electrical interconnectKIM JAMES C·Filed 2010·Granted Apr 30, 2013·3 cites·14 claims
- 0676US8659037B2Nanostructure optoelectronic device with independently controllable junctionsKIM JAMES C·Filed 2010·Granted Feb 25, 2014·4 cites·15 claims
- 0771US6853663B2Efficiency GaN-based light emitting devicesAGILENT TECHNOLOGIES INC·Filed 2001·Granted Feb 8, 2005·10 cites·10 claims
- 0869US6756018B2Method and apparatus for selective execution of microfluidic circuits utilizing electrically addressable gas generatorsAGILENT TECHNOLOGIES INC·Filed 2001·Granted Jun 29, 2004·9 cites·19 claims
- 0961US6878959B2Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublatticeAGILENT TECHNOLOGIES INC·Filed 2002·Granted Apr 12, 2005·9 cites·26 claims
- 1048US9806111B2Nanostructure optoelectronic device with independently controllable junctionsSUNDIODE INC·Filed 2014·Granted Oct 31, 2017·0 cites·13 claims
- 1139US2004161006A1Method and apparatus for improving wavelength stability for InGaAsN devicesFiled 2003·Application pending·0 cites
- 1237US5376229AMethod of fabrication of adjacent coplanar semiconductor devicesFiled 1993·Granted Dec 27, 1994·8 cites·13 claims
- 1335US2012025169A1Nanostructure array transistorMARS DANNY E·Filed 2010·Application pending·0 cites
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