Inventor · disambiguated record
Yoshinori Tokura
Also filed as: TOKURA YOSHINORI
37 granted patents·4 pending applications·251 citations·filing 1986–2019
97Inventor score
Files withRIKEN13NAT INST OF ADVANCED IND SCIEN5AGENCY IND SCIENCE TECHN4SUMITOMO CHEMICAL CO4JAPAN SCIENCE & TECH AGENCY3
Top patents by PatentIndex Score
41 records- 0186US7580276B2Nonvolatile memory elementNAT INST OF ADVANCED IND SCIEN·Filed 2006·Granted Aug 25, 2009·19 cites·15 claims
- 0284US5231533ANonlinear optical element and uses thereofJAPAN SYNTHETIC RUBBER CO LTD·Filed 1992·Granted Jul 27, 1993·78 cites·28 claims
- 0383US10210970B2Metallic-magnetic-domain-wall-based nonvolatile tunable resistor for memory and sensor applicationsUNIV LELAND STANFORD JUNIOR·Filed 2016·Granted Feb 19, 2019·3 cites·10 claims
- 0483US7715094B2Optical fiber element and method for imparting non-reciprocity of light using the sameJAPAN SCIENCE OF TECHNOLOGY AG·Filed 2006·Granted May 11, 2010·12 cites·9 claims
- 0582US4981767APhotoconductive mixed crystals of phthalocyanine compounds and process for producing the sameMITSUBISHI PETROCHEMICAL CO·Filed 1989·Granted Jan 1, 1991·27 cites·12 claims
- 0677US9748000B2Magnetic element, skyrmion memory, solid-state electronic device data recording apparatus, data processing apparatus, and communication apparatusRIKEN·Filed 2016·Granted Aug 29, 2017·4 cites·20 claims
- 0773US7084624B2Magnetic sensorJAPAN SCIENCE & TECH AGENCY·Filed 2003·Granted Aug 1, 2006·9 cites·19 claims
- 0872US10141068B2Magnetic element, skyrmion memory, skyrmion memory-device, solid-state electronic device, data-storage device, data processing and communication deviceRIKEN·Filed 2017·Granted Nov 27, 2018·3 cites·19 claims
- 0970US12114572B2Compound and thermoelectric conversion materialSUMITOMO CHEMICAL CO·Filed 2019·Granted Oct 8, 2024·0 cites·20 claims
- 1070US12029126B2Compound and thermoelectric conversion materialSUMITOMO CHEMICAL CO·Filed 2019·Granted Jul 2, 2024·0 cites·19 claims
- 1168US4678736AOptical recording media on which information is stored and method of making sameMITSUBISHI PETROCHEMICAL CO·Filed 1986·Granted Jul 7, 1987·17 cites·16 claims
- 1267US7485937B2Tunnel junction deviceNAT INST OF ADVANCED IND SCIEN·Filed 2005·Granted Feb 3, 2009·4 cites·10 claims
- 1366US6985276B2Magnetooptic element exploiting spin chiralityJAPAN SCIENCE & TECH AGENCY·Filed 2002·Granted Jan 10, 2006·6 cites·9 claims
- 1465US9859017B2Magnetic element, skyrmion memory, skyrmion memory-device, solid-state electronic device, data-storage device, data processing and communication deviceRIKEN·Filed 2017·Granted Jan 2, 2018·2 cites·20 claims
- 1564US11171277B2Compound and thermoelectric conversion materialSUMITOMO CHEMICAL CO·Filed 2017·Granted Nov 9, 2021·0 cites·14 claims
- 1663US9704550B2Magnetic element, skyrmion memory and arithmetic processing unitRIKEN·Filed 2016·Granted Jul 11, 2017·1 cites·10 claims
- 1762US11063197B2Compound, thermoelectric conversion material, and method for producing compoundSUMITOMO CHEMICAL CO·Filed 2017·Granted Jul 13, 2021·0 cites·16 claims
- 1861US7487710B2High-pressure generation apparatusNAT INST OF ADVANCED IND SCIEN·Filed 2005·Granted Feb 10, 2009·2 cites·2 claims
- 1959US7978047B2Variable resistor element and its manufacturing methodSHARP KK·Filed 2006·Granted Jul 12, 2011·4 cites·31 claims
- 2058US7932505B2Perovskite transition metal oxide nonvolatile memory elementNAT INST OF ADVANCED IND SCIEN·Filed 2006·Granted Apr 26, 2011·4 cites·7 claims
- 2158US5665664AGrain boundary-free crystalline body of manganese-based composite oxide and method for the preparation thereofAGENCY IND SCIENCE TECHN·Filed 1995·Granted Sep 9, 1997·16 cites·6 claims
- 2253US12362085B2Inductor element and apparatus including sameRIKEN·Filed 2019·Granted Jul 15, 2025·0 cites·5 claims
- 2353US6136457AManganese oxide material having MnO3 as a matrixAGENCY IND SCIENCE TECHN·Filed 1998·Granted Oct 24, 2000·13 cites·5 claims
- 2450US11056597B2Photoelectric conversion device, photosensor, power generation device, and photoelectric conversion methodRIKEN·Filed 2018·Granted Jul 6, 2021·0 cites·14 claims
- 2547US6166947AManganese oxide material having MnO3 as a matrixAGENCY IND SCIENCE TECHN·Filed 1999·Granted Dec 26, 2000·13 cites·2 claims
- 2646US10658426B2Magnetic element, skyrmion memory, skyrmion memory-mounted central processing LSI, data recording apparatus, data processing apparatus, and data communication apparatusRIKEN·Filed 2019·Granted May 19, 2020·0 cites·20 claims
- 2740US2011253204A1Solar CellRIKEN·Filed 2011·Application pending·0 cites
- 2839US9824712B2Magnetic storage media and data storage deviceRIKEN·Filed 2017·Granted Nov 21, 2017·0 cites·15 claims
- 2938US10217931B2Magnetic element, skyrmion memory, solid-state electronic device, data-storage device, data processing and communication deviceRIKEN·Filed 2017·Granted Feb 26, 2019·0 cites·16 claims
- 3038US10003010B2Magnetic element, skyrmion memory, skyrmion memory device, skyrmion-memory embedded solid-state electronic device, data storage apparatus, data processing and communication apparatusRIKEN·Filed 2017·Granted Jun 19, 2018·0 cites·20 claims
- 3138US7633723B2Tunnel junction device having oxide ferromagnetic electroconductive electrodes and three-layer structure tunneling filmNAT INST OF ADVANCED IND SCIEN·Filed 2004·Granted Dec 15, 2009·0 cites·10 claims
- 3238US2005012029A1Ultra high-speed photoelectric signal conversion elementFiled 2002·Application pending·0 cites
- 3337US2016223413A1Stress sensor and fabrication method for the sameROHM CO LTD·Filed 2015·Application pending·0 cites
- 3436US10049761B2Magnetic element, skyrmion memory, solid-state electronic device, data-storage device, data processing and communication deviceRIKEN·Filed 2017·Granted Aug 14, 2018·0 cites·13 claims
- 3535US6137395AMagnetoresistor with ordered double perovskite structure and method for the production thereofAGENCY IND SCIENCE TECHN·Filed 1999·Granted Oct 24, 2000·7 cites·3 claims
- 3634US6330135B1Magneto-resistance effect element based on a ferromagnetic oxide thin film on a stepped layer oxideNIPPON ELECTRIC CO·Filed 1999·Granted Dec 11, 2001·4 cites·10 claims
- 3733US10468586B2Electronic device, topological insulator, fabrication method of topological insulator and memory deviceRIKEN·Filed 2018·Granted Nov 5, 2019·0 cites·13 claims
- 3833US6966946B2Crystal production method for gallium oxide-iron mixed crystalJAPAN SCIENCE & TECH AGENCY·Filed 2002·Granted Nov 22, 2005·0 cites·12 claims
- 3933US2009196818A1Multiferroic elementJAPAN SCIENCE AND TECHNOLOGYAG·Filed 2007·Application pending·0 cites
- 4032US5214026AMethod for producing a R-Ce-Cu-O superconducting material wherein R is at least one rare earth elementUNIV TOKYO·Filed 1992·Granted May 25, 1993·2 cites·1 claims
- 4130US5143895AR-ce-cu-o superconducting oxide material wherein r is at least one element selected from the group consisting of pr, nd, and smUNIV TOKYO·Filed 1990·Granted Sep 1, 1992·1 cites·7 claims
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