Inventor · disambiguated record
John T. Gasner
Also filed as: GASNER JOHN T
25 granted patents·474 citations·filing 1977–2013
96Inventor score
Top patents by PatentIndex Score
25 records- 0194US4599789AProcess of making twin well VLSI CMOSHARRIS CORP·Filed 1984·Granted Jul 15, 1986·88 cites·14 claims
- 0290US4760433AESD protection transistorsHARRIS CORP·Filed 1986·Granted Jul 26, 1988·74 cites·21 claims
- 0379US7341958B2Integrated process for thin film resistors with silicidesINTERSIL INC·Filed 2005·Granted Mar 11, 2008·5 cites·22 claims
- 0479US5481129AAnalog-to-digital converterHARRIS CORP·Filed 1995·Granted Jan 2, 1996·41 cites·14 claims
- 0578US4666737AVia metallization using metal filletsHARRIS CORP·Filed 1986·Granted May 19, 1987·55 cites·18 claims
- 0677US8963266B2Devices including bond pad having protective sidewall sealLI HELEN HONGWEI·Filed 2012·Granted Feb 24, 2015·5 cites·20 claims
- 0777US5547896ADirect etch for thin film resistor using a hard maskHARRIS CORP·Filed 1995·Granted Aug 20, 1996·53 cites·30 claims
- 0876US8536044B2Protecting bond pad for subsequent processingLI HELEN HONGWEI·Filed 2010·Granted Sep 17, 2013·5 cites·21 claims
- 0974US8274160B2Active area bonding compatible high current structuresGASNER JOHN T·Filed 2010·Granted Sep 25, 2012·3 cites·22 claims
- 1071US4135955AProcess for fabricating high voltage cmos with self-aligned guard rings utilizing selective diffusion and local oxidationHARRIS CORP·Filed 1977·Granted Jan 23, 1979·28 cites·15 claims
- 1170US7662692B2Integrated process for thin film resistors with silicidesINTERSIL INC·Filed 2007·Granted Feb 16, 2010·2 cites·19 claims
- 1270US5650344AMethod of making non-uniformly nitrided gate oxideHARRIS CORP·Filed 1995·Granted Jul 22, 1997·26 cites·19 claims
- 1368US7795130B2Active area bonding compatible high current structuresINTERSIL INC·Filed 2007·Granted Sep 14, 2010·3 cites·11 claims
- 1467US7224074B2Active area bonding compatible high current structuresINTERSIL INC·Filed 2005·Granted May 29, 2007·3 cites·57 claims
- 1560US7005369B2Active area bonding compatible high current structuresINTERSIL AMERICAN INC·Filed 2003·Granted Feb 28, 2006·8 cites·44 claims
- 1658US5808348ANon-uniformly nitrided gate oxide and methodHARRIS CORP·Filed 1997·Granted Sep 15, 1998·15 cites·12 claims
- 1757US4578859AImplant mask reversal processHARRIS CORP·Filed 1984·Granted Apr 1, 1986·13 cites·28 claims
- 1856US8946912B2Active area bonding compatible high current structuresINTERSIL INC·Filed 2013·Granted Feb 3, 2015·0 cites·15 claims
- 1955US4223334AHigh voltage CMOS with local oxidation for self-aligned guard rings and process of fabricationHARRIS CORP·Filed 1978·Granted Sep 16, 1980·15 cites·2 claims
- 2054US8652960B2Active area bonding compatible high current structuresINTERSIL INC·Filed 2012·Granted Feb 18, 2014·0 cites·19 claims
- 2151US8569896B2Active area bonding compatible high current structuresGASNER JOHN T·Filed 2012·Granted Oct 29, 2013·0 cites·19 claims
- 2249US8338914B2Integrated process for thin film resistors with silicidesGASNER JOHN T·Filed 2010·Granted Dec 25, 2012·0 cites·25 claims
- 2347US5696452AArrangement and method for improving room-temperature testability of CMOS integrated circuits optimized for cryogenic temperature operationHARRIS CORP·Filed 1995·Granted Dec 9, 1997·13 cites·18 claims
- 2441US6350640B1CMOS integrated circuit architecture incorporating deep implanted emitter region to form auxiliary bipolar transistorINTERSIL INC·Filed 1994·Granted Feb 26, 2002·8 cites·21 claims
- 2540US5648678AProgrammable element in barrier metal deviceHARRIS CORP·Filed 1994·Granted Jul 15, 1997·11 cites·19 claims
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